公开(公告)号：US20210277500A1

公开(公告)日：2021-09-09

申请号：US17126359

申请日：2020-12-18

申请人： Northwestern Polytechnical University

发明人： Wenchao YANG ,  Jiarun QIN ,  Pengfei QU ,  Lin LIU ,  Jun ZHANG ,  Haijun SU ,  Taiwen HUANG ,  Min GUO ,  Yueling GUO

IPC分类号： C22C1/03 ,  C22C19/03 ,  C30B15/36 ,  C30B15/10 ,  C30B15/24 ,  C30B15/16

摘要： In the method for preparing single crystal superalloy test bars by using a Ni—W heterogeneous seed crystal, on the premise of ensuring that the single crystal superalloy has the required orientation, by reusing the seed crystal, it is achieved that the trouble caused by the need of preparing a new seed crystal when a single crystal superalloy is produced by the seed crystal method every time is avoided, and the production cost is significantly reduced. In the present disclosure, the formation of the stray grains in mushy zone could be avoided by using a Ni—W heterogeneous seed crystal without mushy zone and a built-in corundum tube.

公开(公告)号：US20100212580A1

公开(公告)日：2010-08-26

申请号：US12678400

申请日：2008-07-25

申请人： Shinichi Kawazoe ,  Fukuo Ogawa ,  Yasuhito Narushima ,  Toshimichi Kubota

发明人： Shinichi Kawazoe ,  Fukuo Ogawa ,  Yasuhito Narushima ,  Toshimichi Kubota

IPC分类号： C30B15/30 ,  C30B15/24 ,  C30B29/06

CPC分类号： C30B15/04 ,  C30B15/20 ,  C30B29/06 ,  Y10T117/1064 ,  Y10T117/1072

摘要： For manufacturing a monocrystal, a monocrystal pulling-up device controls pressure within a flow straightening cylinder to be from 33331 Pa to 79993 Pa and a flow velocity of inert gas in the cylinder to be from 0.06 m/sec to 0.31 m/sec (0.005 to 0.056 SL/min·cm2) during a post-addition-pre-growth period. By controlling the flow velocity of the inert gas to be in the above-described range during the post-addition-pre-growth period, the inert gas flows smoothly even when the pressure within the cylinder is relatively high. Evaporation of a volatile dopant because of a reverse flow of the inert gas can be restrained. The volatile dopant can be prevented from adhering to the flow straightening cylinder in an amorphous state, and the volatile dopant can be prevented from dropping into a melt or sticking on the melt while growing a crystal. Foulings can be easily removed.

摘要翻译： 为了制造单晶，单晶提拉装置控制整流筒内的压力为33331Pa至79993Pa，气缸中的惰性气体流速为0.06m / sec至0.31m / sec（0.005 至0.056SL /分·cm 2）。 通过在加成后生长期间将惰性气体的流速控制在上述范围内，即使当气缸内的压力相对较高时，惰性气体也平滑地流动。 由于惰性气体的反向流动，可以抑制挥发性掺杂剂的蒸发。 可以防止挥发性掺杂剂以非晶状态粘附到流动矫正圆筒上，并且可以防止挥发性掺杂剂在生长晶体的同时落入熔体或粘附在熔体上。 结垢可以很容易地去除。

公开(公告)号：US5942033A

公开(公告)日：1999-08-24

申请号：US48302

申请日：1998-03-26

申请人： Shoei Kurosaka ,  Hiroshi Inagaki ,  Shigeki Kawashima ,  Junsuke Tomioka

发明人： Shoei Kurosaka ,  Hiroshi Inagaki ,  Shigeki Kawashima ,  Junsuke Tomioka

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B15/24

CPC分类号： C30B15/30 ,  Y10S117/911 ,  Y10T117/1072

摘要： A crystal-clamping fixture 30 is suspended by a pulling up mechanism 1 through the use of wires. The crystal-clamping fixture 30 includes a box 31 and a plurality of holding rods 32. The box 31 has two openings formed on its top and bottom sides. The reduced portion 2a, the enlarged portion 2b and the necked portion 2c formed beneath the seed crystal 5 are allowed to penetrate through the two openings during the pulling up operation. A plurality of "S" shaped slots 31a, 31b are formed on the lateral sides of the box 31. The holding rods 32 capable of rotating along the path of the "S" shaped slots 31a, 31b are horizontally disposed within the box 31 by inserting their two end portions through the "S" shaped slots 31a, 31b. The holding rods kept restrained at the upper ends of the "S" shaped slots are pushed out by the conic surface formed at the upper part of the enlarged portion 2b and rotate and descend to reach the lower ends of the "S" shaped slots. At the time the crystal-clamping fixture 30 is directed to ascend a small distance, then the holding rods 32 contact the conic surface formed between the enlarged portion 2b and the necked portion 2c to clamp the single crystal 2.

摘要翻译： 通过使用电线，拉出机构1悬挂晶体夹具30。 晶体夹具30包括盒31和多个保持杆32.盒31具有在其顶侧和底侧上形成的两个开口。 在拉拔操作期间允许形成在晶种5下面的缩小部分2a，扩大部分2b和颈部2c穿过两个开口。 多个“S”形槽31a，31b形成在盒31的侧面上。能够沿着“S”形槽31a，31b的路径旋转的保持杆32通过 将它们的两个端部插入穿过“S”形槽31a，31b。 在“S”形槽的上端保持约束的保持杆被形成在扩大部分2b的上部的锥形表面推出，并且旋转和下降到达“S”形槽的下端。 当晶体夹具30被指向上升一小段距离时，保持杆32接触形成在扩大部分2b和颈缩部分2c之间的锥形表面，以夹紧单晶2。

公开(公告)号：US5827366A

公开(公告)日：1998-10-27

申请号：US754158

申请日：1996-11-22

申请人： Masahito Watanabe

发明人： Masahito Watanabe

IPC分类号： C30B15/24 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  Y10S117/917 ,  Y10T117/1008

摘要： In a Czochralski monocrystalline silicon growing apparatus for growing a silicon monocrystalline by pulling up a crystal seed by a wire in a growing furnace, a magnetic ring is mounted on the silicon monocrystal, and an electromagnet is fixed to the growing furnace for pulling up the magnetic ring.

摘要翻译： 在用于通过在生长炉中用线拉起晶种以生长硅单晶的切克劳斯基单晶硅生长装置中，将磁环安装在硅单晶上，并将电磁体固定到生长炉上以提升磁 环。

公开(公告)号：US5762703A

公开(公告)日：1998-06-09

申请号：US724438

申请日：1996-10-01

申请人： Winfried Schulmann ,  Franz Thimm ,  Helmut Kaiser

发明人： Winfried Schulmann ,  Franz Thimm ,  Helmut Kaiser

IPC分类号： C30B15/30 ,  C30B15/00 ,  C30B15/32 ,  H01L21/208 ,  C30B15/24

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1072

摘要： A puller (22) above the melt extracts a crystal (8) upwardly out of the melt surface into a laterally turnable airlock chamber (5) An uncoupling device (7) provided between the crystal (8) and the puller permits the severance of the crystal (8) from the puller. The device (7) is formed by a coupling ring (10) connected to the pull shaft (22) and having a longitudinal slot (9) which cooperates with a crystal holder which is provided with a mushroom-shaped head part (11), and by an airlock ring (14) held by the cover plate (15) of the airlock chamber (5). Airlock gates (13, 13') journaled on the airlock ring (14) pivot about horizontal axes (35, 35') from a horizontal locking position to a vertical open position and vice versa, their end faces (16, 16') forming an opening (17) in the locking position, thereby encompassing the shaft (19) of the seed holder (12) to lock it in the plane of the airlock ring (14).

摘要翻译： 熔体上方的拉拔器（22）将晶体（8）从熔体表面向上提取出进入可横向旋转的气闸室（5）。设置在晶体（8）和拉拔器之间的解耦装置（7）允许切断 水晶（8）从拉拔器。 装置（7）由连接到拉动轴（22）的联接环（10）形成，并且具有与设置有蘑菇形头部（11）的晶体保持器配合的纵向槽（9） 以及由气闸室（5）的盖板（15）保持的气闸环（14）。 在气锁环（14）上挂住的气锁门（13,13'）围绕水平轴线（35,35'）从水平锁定位置枢转到垂直打开位置，反之亦然，它们的端面（16,16'）形成 在所述锁定位置处的开口（17），从而包围所述种子保持器（12）的轴（19）以将其锁定在所述气锁环（14）的平面中。

公开(公告)号：US5690735A

公开(公告)日：1997-11-25

申请号：US521686

申请日：1995-08-31

申请人： Uwe Becker

发明人： Uwe Becker

IPC分类号： C30B15/00 ,  C30B15/24 ,  C30B13/02

CPC分类号： C30B15/24 ,  C30B15/00 ,  C30B29/60

摘要： In order to improve a process for growing crystals from a molten zone which is heated and to which a source material is supplied which is melted and deposited in crystalline form on a substrate from the molten zone, such that dimensions of the substrate along an interface between the substrate and the molten zone are dependent to a lesser extent on dimensions of the source material supplied to the molten zone, it is suggested that the molten zone be mechanically stabilized by a wall member which forms a boundary of the molten zone and is essentially immovable relative to the molten zone, a base member which forms a lower boundary of the molten zone and is movable relative to the wall member and a meniscus arranged between the base member and the wall member.

摘要翻译： 为了改进从熔融区生长晶体的过程，该熔融区被加热并且从熔融区熔融并沉积在基底上的源材料被熔融并沉积在基底上，使得基底沿着界面处的尺寸 衬底和熔融区域在较小程度上取决于提供给熔融区域的源材料的尺寸，建议熔融区域由形成熔融区边界并且基本上不可移动的壁构件的机械稳定 相对于所述熔融区域形成的底部构件，其形成所述熔融区域的下边界并且可相对于所述壁构件移动，以及设置在所述基部构件和所述壁构件之间的弯液面。

公开(公告)号：US4944925A

公开(公告)日：1990-07-31

申请号：US357663

申请日：1989-05-25

申请人： Kazuhisa Yamauchi ,  Kazuo Sawada ,  Yoshihiro Nakai

发明人： Kazuhisa Yamauchi ,  Kazuo Sawada ,  Yoshihiro Nakai

IPC分类号： C30B15/00 ,  C30B15/24

CPC分类号： C30B15/24 ,  C30B15/00 ,  C30B29/30 ,  C30B29/42 ,  Y10T117/1036 ,  Y10T117/1044 ,  Y10T117/1068

摘要： A method of producing single crystals is characterized in that in withdrawing a semiconductor or dielectric material from its molten state while allowing it to grow into a single crystal solid, a die heated to a temperature higher than the solidifying point of the melt is disposed at the melt withdrawing outlet and the single crystal is withdrawn through the die.

摘要翻译： 制造单晶的方法的特征在于，在使半导体或介电材料从其熔融状态中取出并使其生长成单晶固体的同时，将加热至高于熔融物凝固点的温度的模具设置在 熔融抽出口，单晶通过模具取出。

公开(公告)号：US4617084A

公开(公告)日：1986-10-14

申请号：US632799

申请日：1984-07-20

申请人： Claude Potard

发明人： Claude Potard

IPC分类号： C01B33/02 ,  C01B33/021 ,  C30B11/00 ,  C30B15/00 ,  C30B15/24 ,  C30B27/00 ,  C30B29/64 ,  C30B27/02

CPC分类号： C30B27/00 ,  C30B11/00 ,  C30B11/002 ,  C30B15/007 ,  C30B15/24 ,  C30B29/60 ,  Y10S117/90 ,  Y10S117/901

摘要： Process for the preparation of metallic or semimetallic shaped elements, particularly of silicon, in a molten coating bath.Into a confinement crucible is placed the molten basic semimetallic metallic material and a molten coating bath which is inert with respect to said material and whose melting temperature is below that of the material. Into the material is introduced at least one frame-like part, made from a refractory material whose thickness for wetting is greater with respect to the metallic or semimetallic material than with respect to the molten coating bath. A metallic or semimetallic material shaped element is then produced on the frame by the slow displacement of all or part thereof. This shaped element is solidified in the liquid coating bath and finally the complete frame and the solidified shaped element are removed from the bath.

摘要翻译： 用于在熔融涂层浴中制备金属或半金属形元素，特别是硅的方法。 将熔融的碱性半金属金属材料和相对于所述材料为惰性的熔融涂层浴放入约束坩埚中，其熔融温度低于材料熔融温度。 向材料中引入至少一个框状部分，由相对于金属或半金属材料的润湿厚度比相对于熔融涂覆浴更大的耐火材料制成。 然后通过其全部或部分的缓慢位移在框架上产生金属或半金属材料成形元件。 该成形元件在液体涂层浴中固化，最后从浴中取出完整的框架和固化的成形元件。

公开(公告)号：US4605468A

公开(公告)日：1986-08-12

申请号：US628949

申请日：1984-07-10

申请人： Antonio C. Pastor

发明人： Antonio C. Pastor

IPC分类号： C30B15/24 ,  C30B15/34

CPC分类号： C30B15/24 ,  Y10S117/90 ,  Y10T117/102 ,  Y10T117/1036

摘要： An apparatus and method pulling a shaped crystalline fiber of a given crystal-forming material from a liquid reservoir of the material. The apparatus includes a vessel in which the liquid material is maintained as a liquid reservoir at a temperature above the melting point or crystal-forming temperature of the material. A die is provided having an inner-tubular surface which includes a crystal shaping portion which is tapered. The liquid flows from the reservoir through the die so that the liquid flows from the narrow end of the shaping portion to the wide end of the shaping portion. The temperature of the liquid crystal growth material is selectively lowered at the top end of the die to form crystalline material which is continually pulled from the crystal-liquid interface. The apparatus is operated to maintain the crystal-liquid interface within the crystal shaping portion of the die to provide accurate shaping of the crystal by the tubular surface and to maintain accurate alignment of the crystal fiber with the die.

摘要翻译： 从材料的液体储存器中拉出给定结晶形成材料的成形结晶纤维的装置和方法。 该装置包括容器，在该容器中液体材料在高于材料的熔点或晶体形成温度的温度下保持为液体储存器。 提供具有内管状表面的模具，其包括锥形的晶体成形部分。 液体从储存器流过模具，使得液体从成形部分的窄端流到成型部分的宽端。 液晶生长材料的温度在模具的顶端选择性地降低，以形成从晶体 - 液体界面连续拉出的结晶材料。 操作该装置以将晶体 - 液体界面保持在模具的晶体成形部分内，以通过管状表面提供晶体的精确成形并保持晶体纤维与模具的精确对准。

公开(公告)号：US4440728A

公开(公告)日：1984-04-03

申请号：US289410

申请日：1981-08-03

申请人： Richard W. Stormont ,  Lawrence Eriss

发明人： Richard W. Stormont ,  Lawrence Eriss

IPC分类号： C30B15/24 ,  C30B15/00 ,  C30B15/32 ,  C30B15/34 ,  C30B15/36 ,  C30B29/66 ,  H01L21/208 ,  H01L31/02

CPC分类号： C30B15/00 ,  C30B15/34 ,  C30B29/66 ,  Y10S117/911 ,  Y10T117/104

摘要： Apparatus for growing hollow tubular crystalline bodies from the melt includes, in a preferred embodiment, a capillary die of the desired shape, a seed holder having a cross section of similar shape and to which a plurality of elongate seeds may be attached, and an inner after heater of substantially similar shape but smaller size supported from the die by an inner radiation shield.

摘要翻译： 在优选实施例中，用于从熔体生长中空管状结晶体的装置包括所需形状的毛细管芯，具有相似形状的截面的种子保持器，并且多个细长种子可以连接到其上 在具有基本相似形状但较小尺寸的加热器之后，通过内部辐射屏蔽从模具支撑。