公开(公告)号：US20090114147A1

公开(公告)日：2009-05-07

申请号：US12263000

申请日：2008-10-31

Applicant: Hyon-Jong Cho ,  Seung-Ho Shin ,  Ji-Hun Moon ,  Hong-Woo Lee ,  Young-Ho Hong

Inventor： Hyon-Jong Cho ,  Seung-Ho Shin ,  Ji-Hun Moon ,  Hong-Woo Lee ,  Young-Ho Hong

IPC: C30B15/00

CPC classification number: C30B15/305 ,  C30B29/06 ,  C30B30/04

Abstract: The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.

Abstract translation: 本发明涉及一种半导体单晶生长方法，其使用切克劳斯基法（Czochralski）方法，通过将种子浸入容纳在石英坩埚中的半导体熔体中并通过固体 - 液体界面生长半导体单晶，并将其转动 石英坩埚并施加强的水平磁场，其中当石英坩埚以0.6rpm和1.5rpm之间的速率旋转时，种子被拉起。

公开(公告)号：US20090096737A1

公开(公告)日：2009-04-16

申请号：US12128117

申请日：2008-05-28

Applicant: Sung-Man KIM ,  Bong-Jun LEE ,  Hong-Woo LEE

Inventor： Sung-Man KIM ,  Bong-Jun LEE ,  Hong-Woo LEE

IPC: G09G3/36

CPC classification number: G09G3/3677 ,  G09G3/3648 ,  G09G2300/0447 ,  G09G2310/0286 ,  G11C19/184

Abstract: In a gate driver of a display device, a plurality of first stages each transmit a first gate signal having a first gate-on voltage to first gate lines, and a plurality of second stages each transmit a second gate signal having a second gate-on voltage to second gate lines and output a carry signal corresponding to the second gate signal. Each first stage outputs the first gate-on voltage based on a third gate-on voltage of the carry signal from a previous second stage, and each second stage outputs the second gate-on voltage based on the third gate-on voltage of the carry signal from the previous second stage.

Abstract translation: 在显示装置的栅极驱动器中，多个第一级每个向第一栅极线发送具有第一栅极导通电压的第一栅极信号，并且多个第二级每个发送具有第二栅极导通的第二栅极信号 电压到第二栅极线并输出对应于第二栅极信号的进位信号。 每个第一级基于来自前一第二级的进位信号的第三栅极导通电压输出第一栅极导通电压，并且每个第二级基于进位的第三栅极导通电压输出第二栅极导通电压 来自前一个第二阶段的信号。

公开(公告)号：US20090009685A1

公开(公告)日：2009-01-08

申请号：US12168419

申请日：2008-07-07

Applicant: Sang-Yong NO ,  Sun-Hyung KIM ,  Jong-Hwan LEE ,  Beom-Jun KIM ,  Bong-Jun LEE ,  Hong-Woo LEE ,  Shin-Tack KANG

Inventor： Sang-Yong NO ,  Sun-Hyung KIM ,  Jong-Hwan LEE ,  Beom-Jun KIM ,  Bong-Jun LEE ,  Hong-Woo LEE ,  Shin-Tack KANG

IPC: G02F1/13357 ,  G02F1/1335

CPC classification number: G02F1/133502 ,  G02F1/133602 ,  G02F2001/133567

Abstract: A liquid crystal display includes a backlight unit, a liquid crystal display panel, and first and second polarizers. The first polarizer is attached to a lower portion of the liquid crystal display panel to face the backlight unit, and the second polarizer is attached to an upper portion of the liquid crystal display panel to correspond to the first polarizer. The liquid crystal display panel includes a first optical layer that partially reflects light provided from the backlight unit, and the first polarizer includes a second optical layer to prevent the light reflected by the first optical layer from being re-reflected to the liquid crystal display panel.

Abstract translation: 液晶显示器包括背光单元，液晶显示面板以及第一和第二偏振器。 第一偏振器附接到液晶显示面板的下部以面向背光单元，第二偏振器附着到液晶显示面板的上部，以对应于第一偏振器。 液晶显示面板包括部分地反射从背光单元提供的光的第一光学层，并且第一偏振器包括第二光学层，以防止第一光学层反射的光被再反射到液晶显示面板 。

公开(公告)号：US20080297677A1

公开(公告)日：2008-12-04

申请号：US12129198

申请日：2008-05-29

Applicant: Shin-Tack KANG ,  Hong-Woo LEE ,  Hyeon-Hwan KIM ,  Gyu-Tae KIM

Inventor： Shin-Tack KANG ,  Hong-Woo LEE ,  Hyeon-Hwan KIM ,  Gyu-Tae KIM

IPC: G02F1/136 ,  H01L21/84

CPC classification number: H01L27/124 ,  G02F1/1362 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/136222 ,  H01L29/4908

Abstract: A display substrate that has increased aperture ratio is presented. The display substrate includes a base substrate, a first metal pattern formed on the base substrate and a gate wiring and a gate electrode. A first insulating layer is formed on the base substrate covering the first metal pattern. A second metal pattern is formed on the first insulating layer including a data wiring crossing the gate wiring, a source electrode connected to the data wiring and a drain electrode separated from the source electrode. A second insulating layer is formed on the base substrate covering the second metal pattern. A transparent electrode is formed on the second insulating layer. An organic layer is formed on the transparent electrode, and a pixel electrode is formed on the organic layer being insulated with the transparent electrode, and contacted to the drain electrode. The organic layer may comprise red, green and blue color filters.

Abstract translation: 提出了一种具有增加孔径比的显示基板。 显示基板包括基底基板，形成在基底基板上的第一金属图案以及栅极布线和栅极电极。 在覆盖第一金属图案的基底基板上形成第一绝缘层。 在第一绝缘层上形成第二金属图案，该第一绝缘层包括与栅极布线交叉的数据布线，连接到数据布线的源电极和与源电极分离的漏电极。 在覆盖第二金属图案的基底基板上形成第二绝缘层。 在第二绝缘层上形成透明电极。 在透明电极上形成有机层，在与透明电极绝缘的有机层上形成像素电极，并与漏电极接触。 有机层可以包括红色，绿色和蓝色滤色器。

公开(公告)号：US20080036725A1

公开(公告)日：2008-02-14

申请号：US11782957

申请日：2007-07-25

Applicant: Hong-Woo LEE ,  Myung-Koo HUR ,  Jong-Hwan LEE ,  Beom Jun KIM ,  Sung-Man KIM

Inventor： Hong-Woo LEE ,  Myung-Koo HUR ,  Jong-Hwan LEE ,  Beom Jun KIM ,  Sung-Man KIM

IPC: G09G3/36

CPC classification number: G09G3/3677 ,  G09G2300/0408 ,  G09G2310/0267 ,  G09G2320/02 ,  G09G2330/08 ,  G11C19/28

Abstract: A gate driver comprises a shift register that has a plurality of stages connected together and outputs a gate signal comprising a first pulse and a second pulse to a gate line. A stage includes a holding part, a pre-charging part, a pull-up part, and a pull-down part. The holding part discharges an output terminal to an off-voltage in response to a first clock signal. The pre-charging part turns off the holding part and outputs the first clock signal as the first pulse to the output terminal in response to an output signal of a previous stage. The pull-up part outputs a second clock signal as the second pulse to the output terminal in response to the output signal of the previous stage. The pull-down part discharges the first output terminal to the off-voltage in response to an output signal of a next stage.

Abstract translation: 栅极驱动器包括具有连接在一起的多个级的移位寄存器，并将包括第一脉冲和第二脉冲的门信号输出到栅极线。 舞台包括保持部分，预充电部分，上拉部分和下拉部分。 保持部分响应于第一时钟信号将输出端子放电到截止电压。 预充电部件关闭保持部件，并且响应于前一级的输出信号将第一时钟信号作为第一脉冲输出到输出端子。 上拉部分响应于前一级的输出信号，将第二时钟信号作为第二脉冲输出到输出端。 下拉部分响应于下一级的输出信号将第一输出端子放电到截止电压。

公开(公告)号：US07229495B2

公开(公告)日：2007-06-12

申请号：US10741746

申请日：2003-12-19

Applicant: Hyon-Jong Cho ,  Cheol-Woo Lee ,  Hong-Woo Lee ,  Jin Soo Cheong ,  Sunmi Kim

Inventor： Hyon-Jong Cho ,  Cheol-Woo Lee ,  Hong-Woo Lee ,  Jin Soo Cheong ,  Sunmi Kim

IPC: C30B15/20

CPC classification number: C30B29/06 ,  C30B15/305

Abstract: A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection distribution of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

Abstract translation: 一种通过切克劳斯基法生长硅单晶锭的方法，其能够提供具有非常均匀的面内质量的硅晶片，并且导致半导体器件产率的提高。 提供了一种通过切克劳斯（Czochralski）法制造硅单晶锭的方法，其中当将硅熔体的对流分布分为芯电池和外电池时，硅单晶锭在最大水平方向 芯电池的宽度为硅熔体的表面半径的30〜60％。 在一个实施例中，在单芯晶圆的最大垂直方向深度等于或大于硅熔体的最大深度的50％的条件下，生长硅单晶锭。

公开(公告)号：US20060222122A1

公开(公告)日：2006-10-05

申请号：US11393390

申请日：2006-03-30

Applicant: Jin-Woo Jung ,  Hong-Woo Lee

Inventor： Jin-Woo Jung ,  Hong-Woo Lee

IPC: H04L1/02

CPC classification number: H04B7/0608 ,  H04B7/0404 ,  H04B7/0689 ,  H04B7/0693 ,  H04B7/0817 ,  H04B7/0822 ,  H04B7/0834 ,  H04B7/0871 ,  H04B7/0877 ,  H04W52/42

Abstract: Disclosed herein is a diversity method for activating or deactivating a diversity function depending on the amount of power remaining in a power supply device and a mobile communication terminal incorporating the same. In an embodiment of the present invention, when the amount of power remaining in a power supply device is smaller than a reference value for the activation of a transmission/reception diversity function, which has been previously stored in memory, the transmission/reception diversity function is deactivated, and when the amount of power remaining in a power supply device is equal to or larger than the reference value, the transmission/reception diversity function is activated. In another embodiment, when the amount of power remaining in a power supply device is smaller than a reference value for the activation of a transmission or reception diversity function, which has been previously stored in memory, the transmission or reception diversity function is deactivated.

Abstract translation: 这里公开了一种用于根据剩余在供电装置和包含该功率的移动通信终端中的功率量来激活或去激活分集功能的分集方法。 在本发明的一个实施例中，当电源装置中剩余的电力量小于先前存储在存储器中的用于激活发送/接收分集功能的参考值时，发送/接收分集功能 被禁用，并且当电源装置中剩余的电力量等于或大于参考值时，发送/接收分集功能被激活。 在另一个实施例中，当电源装置中剩余的功率量小于用于激活先前存储在存储器中的发送或接收分集功能的参考值时，发送或接收分集功能被去激活。

公开(公告)号：US20060016386A1

公开(公告)日：2006-01-26

申请号：US11178096

申请日：2005-07-07

Applicant: Hyon-Jong Cho ,  Cheol-Woo Lee ,  Hong-Woo Lee ,  Cheong Soo ,  Kim Sunmi

Inventor： Hyon-Jong Cho ,  Cheol-Woo Lee ,  Hong-Woo Lee ,  Cheong Soo ,  Kim Sunmi

IPC: C30B15/00

CPC classification number: C30B29/06 ,  C30B15/305

Abstract: A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

Abstract translation: 一种通过切克劳斯基法生长硅单晶锭的方法，其能够提供具有非常均匀的面内质量的硅晶片，并且导致半导体器件产率的提高。 提供了一种通过切克劳斯基法（Czochralski method）制造硅单晶锭的方法，其中当将硅熔体的对流分为芯电池和外电池时，硅单晶锭在最大水平方向宽度 的核心单元是硅熔体表面半径的30-60％。 在一个实施例中，在单芯晶圆的最大垂直方向深度等于或大于硅熔体的最大深度的50％的条件下，生长硅单晶锭。

公开(公告)号：US06787551B2

公开(公告)日：2004-09-07

申请号：US10250502

申请日：2003-07-03

Applicant: Chung-Il Hong ,  Soon-Kil Ahn ,  Bok-Young Kim ,  Joong-Bok Ahn ,  Do-Young Lee ,  Hong-Woo Lee ,  Jae-Soo Shin

Inventor： Chung-Il Hong ,  Soon-Kil Ahn ,  Bok-Young Kim ,  Joong-Bok Ahn ,  Do-Young Lee ,  Hong-Woo Lee ,  Jae-Soo Shin

IPC: C07D40112

CPC classification number: C07D417/12

Abstract: The present invention relates to a thiazolidinedione derivative, represented in formula (1) below, pharmaceutically acceptable salts thereof, and/or pharmaceutically acceptable solvates thereof. Further, the present invention provides a pharmaceutical composition comprising the compound represented in formula (1) below, wherein: X represents a carbon or nitrogen atom, Y represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen, or an aryl group, Z represents an oxygen, nitrogen, or sulfur atom, and R1 and R2 each represent a hydrogen atom; or R1 and R2 together form a bond.

Abstract translation: 本发明涉及下式（1）表示的噻唑烷二酮衍生物，其药学上可接受的盐，和/或其药学上可接受的溶剂合物。 另外，本发明提供含有下述通式（1）所示的化合物的药物组合物，其中：X表示碳原子或氮原子，Y表示氢原子，烷基，烷氧基，卤素或芳基 Z表示氧，氮或硫原子，R 1和R 2各自表示氢原子; 或者R1和R2一起形成键。

公开(公告)号：US06431336B1

公开(公告)日：2002-08-13

申请号：US09650008

申请日：2000-08-28

Applicant: Hong-Woo Lee

Inventor： Hong-Woo Lee

IPC: F16F1516

CPC classification number: F16F15/1343 ,  F16F1/041 ,  F16F15/16 ,  F16F2224/043

Abstract: In vibration attenuating apparatus and method for use on damper springs of a clutch disc, the clutch disc includes clutch plates, a clutch hub splinedly connected to a clutch shaft, frictional facings mounted on front and rear surfaces of the clutch plates, and damper springs mounted on the clutch plates. The apparatus further includes variable damping means inserted into each damper spring. The variable damping means controls a damping coefficient of the damper springs in accordance with an intensity of an electric current provided by an electronic control unit in order to prevent the transmission of abnormal vibration of an engine to a transmission unit.

Abstract translation: 在用于离合器盘的阻尼弹簧的振动衰减装置和方法中，离合器盘包括离合器片，与离合器轴花键连接的离合器毂，安装在离合器片的前表面和后表面上的摩擦面，以及安装有阻尼弹簧 在离合器板上。 该装置还包括插入每个阻尼器弹簧中的可变阻尼装置。 可变阻尼装置根据电子控制单元提供的电流的强度来控制阻尼弹簧的阻尼系数，以防止发动机对发送单元的异常振动的传输。