摘要:
A thin-film transistor array panel and a manufacturing method thereof are provided for one or more embodiments. The thin-film transistor array panel may include: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a source electrode and a drain electrode formed on the gate insulating layer; and a flatness layer formed on the source electrode and the drain electrode, wherein the drain electrode has a higher height than the flatness layer.
摘要:
Disclosed is a liquid crystal display device including a first substrate, a second substrate, and a liquid crystal layer interposed there between. The first substrate is provided with gate lines and data lines thereon. The gate lines and data lines cross with each other and are insulated from each other. Pixel electrodes are stacked on the gate lines and data lines. Each pixel electrode includes first and second sub-pixel electrodes spaced apart from each other and a connection electrode, which connects the first sub-pixel electrode to the second sub-pixel electrode. The second substrate is provided with a common electrode thereon. The common electrode includes a first domain divider formed on the center of the first sub-pixel electrode and a second domain divider formed on the center of the second sub-pixel electrode.
摘要:
A thin film transistor array panel is provided, which includes: a display cell array circuit including a plurality of gate lines, a plurality of data lines, a plurality of thin film transistors, and a plurality of pixel electrodes; a gate driving circuit supplying gate signals to the gate lines; and a signal line connected to the gate driving circuit and including first and second line segments separated from each other and a connection member connected to the first and second line segments through at least a contact hole exposing at least one of the first and the second line segments.
摘要:
A thin film transistor array panel includes a substrate, a data line and a gate electrode formed on the substrate, a insulating layer formed on the data line and the gate electrode, a semiconductor layer formed on the insulating layer, a drain electrode and a source electrode formed on the semiconductor layer, a passivation layer formed on the drain electrode and the source electrode including a first contact hole to expose a portion of the data line, a second contact hole to expose a portion of the source electrode, a third contact hole to expose a portion of the drain electrode, and a fourth contact hole to expose a portion of gate electrode, a first connector formed on the passivation layer and connected to the data line and the source electrode through the first contact hole and the second contact hole, a gate line formed on the passivation layer and connected to the gate electrode through the fourth contact hole, and a pixel electrode connected to the drain electrode through the third contact hole.
摘要:
A gate driving circuit includes stages connected in series. In a stage, a pull-up part pulls up a present gate signal to a level of a first clock signal, and a pull-down part receives a next gate signal from a next stage to discharge the present gate signal to an off-voltage. A pull-up driving part turns on or turns off the pull-up part and the carry part. A holding part holds the present gate signal at the off-voltage and a present inverter turns on or turns off the holding part in response to the first clock signal. A ripple preventing capacitor is connected between a present node and an output terminal of a previous stage's inverter to prevent a ripple at the present Q-node in response to an output signal from the previous inverter.
摘要:
The present invention provides a liquid crystal display (“LCD”), a method of manufacturing the same, and a method of repairing the same capable of obtaining a wide viewing angle and improving a success ratio of repair. The LCD includes a gate line, a first data line intersecting the gate line, a thin film transistor (“TFT”) connected with the gate line and the first data line, a pixel electrode connected with the TFT, a first conductive pattern partially overlapping with a first end of the pixel electrode, a second conductive pattern partially overlapping with a second end of the pixel electrode, and a storage capacitor, wherein at least one of the first conductive pattern and the second conductive pattern partially overlaps with the first data line adjacent to the first end of the pixel electrode and a second data line adjacent to the second end of the pixel electrode, respectively.
摘要:
A method of manufacturing a thin film transistor array panel includes forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming an ohmic contact layer on the semiconductor layer, and forming a data line including a source electrode and a drain electrode on the ohmic contact layer. The method further includes depositing a conductive film on the data line and the drain electrode, forming a first photoresist on the conductive film, etching the conductive film using the first photoresist as a mask to form a pixel electrode at least connected to the drain electrode, depositing a passivation layer, and removing the first photoresist to form a passivation member.
摘要:
A display apparatus includes a gate electrode, a first insulating layer pattern formed over the gate electrode, a second insulating layer pattern formed over the first insulating layer pattern, exposing a portion of the first insulating layer, a semiconductor film pattern formed over the second insulating layer pattern and over the first insulating layer pattern, an impurity-doped semiconductor film pattern formed on the semiconductor film pattern, wherein the impurity-doped semiconductor film pattern contacts the top surface of the semiconductor film pattern and exposes a portion of the semiconductor film pattern formed over the gate electrode, a source electrode and a drain electrode each formed over a portion of the impurity doped semiconductor film pattern, a protection film pattern formed over the source electrode and the drain electrode in a TFT area, the protection film pattern having a contact hole over the drain electrode, a pixel electrode pattern formed on the protection film pattern and_electrically connected to the drain electrode.
摘要:
Disclosed is a liquid crystal display device including a first substrate, a second substrate, and a liquid crystal layer interposed there between. The first substrate is provided with gate lines and data lines thereon. The gate lines and data lines cross with each other and are insulated from each other. Pixel electrodes are stacked on the gate lines and data lines. Each pixel electrode includes first and second sub-pixel electrodes spaced apart from each other and a connection electrode, which connects the first sub-pixel electrode to the second sub-pixel electrode. The second substrate is provided with a common electrode thereon. The common electrode includes a first domain divider formed on the center of the first sub-pixel electrode and a second domain divider formed on the center of the second sub-pixel electrode.
摘要:
A wire for a liquid crystal display has a dual-layered structure comprising a first layer made of molybdenum or molybdenum alloy, and a second layer made of molybdenum nitride or molybdenum alloy nitride. To manufacture the wire, a layer made of either a molybdenum or a molybdenum alloy, and another layer one of either a molybdenum nitride or molybdenum alloy nitride by using reactive sputtering method are deposited in sequence, and then patterned simultaneously. The target for reactive sputtering is made of either molybdenum or molybdenum alloy, and the molybdenum alloy comprises one selected from the group consisting of tungsten, chromium, zirconium, and nickel of the content ratio of 0.1 to less than 20 atm % of. The reactive gas mixture for reactive sputtering includes an argon gas and inflow amount of the nitrogen gas is at least 50% of argon gas, to minimize the etch rate of the molybdenum nitride layer or the molybdenum alloy nitride layer for ITO etchant.