Abstract:
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.
Abstract:
An apparatus and method of controlling injection in an electric injection molding machine including a motor and a screw. The apparatus has an encoder detecting a current position of the screw and outputting the detected position as an encoding signal, a memory storing reference positions of the screw according to a drive of the motor by the passage of time, and a current controller checking an elapse of time that the screw moves from a previous position to a current position through receiving the encoding signal from the encoder, reading out a section of time corresponding to the checked elapse of time from the memory, and controlling a current value applied to the motor based on a difference between a reference position of the screw corresponding to the read-out section of time and a current position of the screw.
Abstract:
A method and system for updating contents is provided. According to the method and system for updating the contents, a content provision server determines scheduling of update time information, which is classified by each member, and transmits the update time information to each mobile terminal of each member, and the mobile terminal transmits an update request signal to the content provision server based on the update time information, and receives update information from the content provision server.
Abstract:
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.
Abstract:
A laser scanning device and an image forming device including the laser scanning device are provided. The laser scanning device includes: a laser diode (LD) driver arranged to control a driving signal supplied to a laser diode (LD); and a power source unit arranged to delay a current supplied from a bias power source for a predetermined period of time to remove a surge current transmitting to the LD driver. In this case, the laser scanning device further includes: a bead arranged to filter the surge current of the driving signal supplied from the LD driver to the laser diode (LD); and a diode connected to the laser diode (LD) in parallel to induce an inverse surge current flowing from a ground port toward the LD driver. As a result, the laser diode (LD) can be prevented from being deteriorated by the surge current.
Abstract:
A multi-beam scanning unit includes a light source having a plurality of light emitting portions, each light emitting portion emitting a laser beam, and a beam deflector deflecting each of the laser beams emitted from the light emitting portions in a main scanning direction of a photosensitive medium. The light emitting portions are arranged in a line on a light exit surface of the light source, and an angle A between a section on a light exit surface of the light source corresponding to a sub-scanning direction that is a direction in which the photosensitive medium moves and a section connecting the light emitting portions satisfies the following inequalities: 0°
Abstract:
Disclosed is an apparatus and a method for displaying images or videos in a telecommunication terminal having a rotatable display. When the display has been rotated, images or videos are displayed as they are and, when the display has not been rotated, target regions are chosen from the images or videos based on the screen size and are displayed.
Abstract:
Provided is an apparatus for controlling a laser output comprising a common-anode laser diode having a first light emitting and receiving units and a common-cathode laser diode having a second light emitting and receiving units. Further, the apparatus comprises an automatic power controller (APC) that operates in either one of two modes. In the first mode the APC controls the amount of light emitted from the first light emitting unit by comparing a first feedback voltage corresponding to an amount of light received by the first light receiving unit and a reference voltage. In the second mode, the APC controls the amount of light emitted from the second light emitting unit by comparing a second feedback voltage corresponding to an amount of light received by the second light receiving unit and a reference voltage. Still further, the apparatus comprises a switching unit which connects the APC and the common-anode laser diode and the apparatus comprises a bias direction forming unit which forms a bias direction between the switching unit and the common-cathode laser diode.
Abstract:
There is disclosed a method of manufacturing a capacitor in a semiconductor device. The present invention forms a Ru film as a lower electrode of the capacitor in which a Ta2O5 film is used as a dielectric film by introducing Ru of a raw material, oxygen and NH3 in order to reduce oxygen or a NH3 plasma process as a subsequent process is performed in order to remove oxygen existing on the surface of the Ru film. Therefore, the present invention can prevent oxidization of a diffusion prevention film due to oxygen existing in a Ru film during annealing process performed after deposition of a Ta2O5 film and thus improve reliability of the device.
Abstract:
Self-seeding method and apparatus for a dual cavity type tunable laser utilizing a diffraction grating are disclosed, in which first diffracted beams and 0th diffracted beams are utilized. The self-seeding method and apparatus for a dual cavity type tunable laser are constituted such that two oscillators are internally provided by utilizing a diffraction grating and by making a single medium shared, so that the respective oscillators would serve as a master oscillator and a slave oscillator, thereby making it possible to save optical devices. Further, in the present invention, only one partially reflecting mirror is disposed on the output portion of a GIM (grazing incidence with tuning mirror) type oscillator, so that a self-seeding would occur, and that the laser output would be greatly amplified with the oscillation linewidth maintained without variations.