摘要:
A method of polishing semiconductor wafers and apparatus therefore are described. According to the present invention, a semiconductor wafer mounted on the lower side of a wafer mounting plate may be polished on a polishing pad by the front referenced polishing technique due to a flexibility of the wafer mounting plate to make the same to conform in detail with the backside contour of the wafer under polishing pressure and a selected flexibility differential between a wafer holding region and the outer moving region of the wafer mounting plate. An apparatus includes the wafer mounting plate that also works as a vacuum chuck plate is constructed out of a flexible thin disc of hard plastics, a central round region is used for a wafer holding region facing the backside of the wafer and the outside annular region is more flexible to work as a moving region, a pan-shaped rubber sheet is secured to a ring projection, the wafer mounting disc is adhered to the inner periphery of the rubber sheet at and along the periphery thereof to generate a sealed space, passes for vacuum communication and for a compressed air supply are formed through a rotary shaft, and vacuum chuck holes are communicated with the vacuum pass and the compressed air pass is in communication with a sealed space in the wafer holder.
摘要:
A polishing apparatus is provided which can effect surface-based polishing of a wafer without causing the wafer to produce an undulation or peripheral protrusion. A sheetlike polishing member 5 constructed by superposing a foam sheet 2 containing minute closed cells in a web of chloroprene rubber and a velour type non-woven fabric (polishing cloth 3) is attached fast to the surface of a polishing table 1. The polishing member is capable of polishing a given wafer while maintaining the uniformity of thickness of the wafer or an oxide film formed on the surface of the wafer because, during the application of pressure by a pressing member 14, the polishing pressure is uniformly distributed throughout the entire rear surface of the wafer and the polishing member is bent in conformity with the global rises and falls in the wafer surface.
摘要:
An MC predicting apparatus which ensures a high prediction accuracy against input image signal stream and avoids arithmetic operation of an evaluation function from becoming an overhead for an image encoding process is provided. Sequence numbers given to respective frames are discriminated, and a degree of interframe correlation is decided from a difference in sequence number of the preceding and current frames. A reference block generator adaptively controls, depending on the degree of interframe correlation, the reference range of MC prediction of the preceding frame stored in a frame memory. As a result, the number of times of arithmetic operation of an evaluation function for MC prediction can be reduced and a prediction accuracy can be improved.
摘要:
A one-way clutch comprises a shaft and an outer race therearound. Plural rollers are circumferentially arranged around the shaft in contact therewith. A torque transmission control ring is interposed between the outer ring and the shaft. The control ring is locked with the outer race and includes grip roller locking spaces each having a shallower part and a deeper part in which spaces the rollers are respectfully received. In one directional rotation of the shaft, the rollers enter into gripping contact between the shaft and control ring to transmit torque and, in the opposite directional rotation, the rollers move out of gripping contact into an idling position. In the idling position, a surface of each control ring space contacts the associated roller to enable the roller to enter into gripping contact between the shaft and control ring substantially immediately upon rotation of the one-way clutch in a direction reverse from the idling direction.
摘要:
In a pulse generator responsive to an input pulse, use is made of a time constant circuit having a time constant for charge and a time constant for discharge considerably greater than the former. The time constant circuit is rapidly charged during presence of the input pulse in accordance with the time constant for charge, through a switching circuit kept on, while it is slowly discharged in accordance with the time constant for discharge after the switching circuit is rendered off due to disappearance of the input pulse. During charging and discharging, the time constant circuit gives a variable level to a threshold circuit for producing an output pulse when the variable level exceeds a threshold level. The output pulse lasts until the variable level is rendered less than the threshold level after disappearance of the input pulse. Additionally, the pulse generator comprises a combination of a constant current portion and a constant voltage portion to stabilize the input and output pulses. The pulse generator is suitable for a noise pulse canceller for a radio receiver.
摘要:
A colored display system for displaying a plurality of colored solid surfaces each of which is obtained by coloring or painting in a region, comprising circuit means for generating figure information signals representative of the respective solid surfaces, a priority circuit for selecting one of the figure information signals in response to a predetermined priority order when the figure information signals are simultaneously generated, a memory circuit for storing color information, circuit means for reading out the color information corresponding to the selected figure information signal from the memory circuit and a color cathode ray tube for displaying the colored solid surfaces in response to the color information read out.
摘要:
A retardation element containing a liquid crystalline compound, and at least one compound selected from the group consisting of a compound represented by the following formula (1), a compound represented by the following formula (2) and a compound represented by the following formula (3). In the formula (1), n represents an integer of 3 to 10 and R2 represents a —CH2—CH2— group, a —CH2—CH(CH3)— group or a —CH2—CH2—CH2— group. In the formula (2), R3 represents a —(CH2)p— group or a phenylene group and p represents an integer of 4 to 8. In the formula (3), R4 represents a substituted phenylene group. In the formulas (1) to (3), R1-1, R1-2 and R1-3 each represent an alkyl group having a branched structure having 5 or more carbon atoms and R1-1, R1-2 and R1-3 may be the same or different.
摘要:
A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.
摘要:
Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.
摘要:
The invention provides a bactericidal/algicidal method including adding an oxidant-based bactericidal/algicidal agent and a stabilizer therefor to a target water system, characterized in that the amount of combined chlorine or the stabilizer in the water system is controlled by generating free residual chlorine in the water system, and a bactericidal/algicidal method including adding an oxidant-based bactericidal/algicidal agent and a stabilizer therefor to a target water system, characterized in that the amount of the oxidant-based bactericidal/algicidal agent added is controlled so that the concentration of total residual chlorine in the water system falls within a predetermined range, and the amount of combined chlorine or the stabilizer is controlled so that the concentration of free residual chlorine in the water system falls within a predetermined range.An object of the present invention is to provide a bactericidal/algicidal method including adding an oxidant-based bactericidal/algicidal agent and a stabilizer therefor to a target water system for bactericidal/algicidal treatment, wherein the amount of combined chlorine or the stabilizer is controlled, and the amount of the oxidant-based bactericidal/algicidal agent added is controlled, which method realizes effective utilization of the stabilizer, to thereby reduce the amount of the stabilizer employed and to reduce COD and the amount of nitrogen derived from the stabilizer, and which method does not require a special control apparatus for in-line mixing as described above.