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    Non-volatile phase-change memory device and associated program-suspend-read operation
    62.
    发明授权
    Non-volatile phase-change memory device and associated program-suspend-read operation 有权
    非易失性相变存储器件和相关的程序挂起读操作

    公开(公告)号：US07349245B2

    公开(公告)日：2008-03-25

    申请号：US11486100

    申请日：2006-07-14

    Applicant: Hye-jin Kim ,  Kwang-jin Lee ,  Sang-Beom Kang ,  Mu-hui Park

    Inventor： Hye-jin Kim ,  Kwang-jin Lee ,  Sang-Beom Kang ,  Mu-hui Park

    IPC: G11C11/00 ,  G11C11/14

    CPC classification number: G11C8/12 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0078

    Abstract: A method of performing a program-suspend-read operation in a PRAM device comprises programming a write block comprising N unit program blocks in response to a program operation request, and suspending the program operation after programming M unit program blocks, where M is less than N, in response to a read operation request. The method further comprises executing the requested read operation, and then resuming the programming of the write data block and programming (N−M) remaining unit program blocks.

    Abstract translation: 一种在PRAM设备中执行程序挂起读取操作的方法包括响应于程序操作请求编程包含N个单元程序块的写入块，并且在对M个单元程序块进行编程之后暂停编程操作，其中M小于 N，响应于读取操作请求。 该方法还包括执行所请求的读取操作，然后恢复写入数据块和编程（N-M）剩余单元程序块的编程。

    Composition of acryl-silicone complex, preparing method and use thereof
    64.
    发明申请
    Composition of acryl-silicone complex, preparing method and use thereof 有权
    丙烯酸 - 硅氧烷配合物的组成，其制备方法和用途

    公开(公告)号：US20070100073A1

    公开(公告)日：2007-05-03

    申请号：US11549214

    申请日：2006-10-13

    Applicant: Kwang-jin LEE ,  Jeong-heon AHN ,  Hye-kyong LEE ,  Boo-ho SEO ,  Ji-min LEE

    Inventor： Kwang-jin LEE ,  Jeong-heon AHN ,  Hye-kyong LEE ,  Boo-ho SEO ,  Ji-min LEE

    IPC: C08F30/08 ,  C08G77/20

    CPC classification number: C08F265/04 ,  C08F257/02 ,  C08F265/06 ,  C08F283/00 ,  C08F283/12 ,  C08F285/00 ,  C08G77/442 ,  C08L51/04 ,  C08L51/08 ,  Y10S525/902 ,  Y10S525/903 ,  C08L2666/04 ,  C08L2666/02

    Abstract: The present invention relates to an acryl-silicon rubber complex polymer and a method for the preparation and use of the same. More precisely, the present invention relates to an acryl-silicon rubber complex polymer which has a seed-core-shell structure wherein the vinyl monomer and hydrophilic monomer are cross-linked on the seed; the acryl-silicon complex IPN core having an IPN (interpenetrating network) structure in which silicon rubber particles are dispersed by being cross-linked to acryl rubber, in a continuous phase, is formed on the seed; and a shell prepared by graft-polymerization of C1˜C4 alkyl methacrylate to the acryl-silicon complex IPN core is formed on the core, and a method of preparation and use of the same. The acryl-silicon rubber complex polymer of the present invention has excellent impact resistance, weatherability and gloss, so that it can be effectively used as an impact modifier for vinyl chloride resin. The acryl-silicon complex IPN core has an IPN (interpenetrating network) structure formed by radical polymerization of acryl monomer and hydrosilyation of silicon rubber.

    Abstract translation: 本发明涉及丙烯酸硅橡胶复合聚合物及其制备和使用方法。 更准确地说，本发明涉及一种具有种核 - 壳结构的丙烯酰硅橡胶复合聚合物，其中乙烯基单体和亲水单体在种子上交联; 在种子上形成具有IPN（互穿网络）结构的丙烯酸 - 硅复合物IPN芯，其中硅橡胶颗粒通过与丙烯酸橡胶交联而分散在其中; 并且在芯上形成通过将C1-C4烷基甲基丙烯酸酯接枝到丙烯酸 - 硅复合物IPN芯上而制备的壳及其制备和使用方法。 本发明的丙烯酸 - 硅橡胶复合聚合物具有优异的耐冲击性，耐候性和光泽，因此可有效地用作氯乙烯树脂的抗冲击改性剂。 丙烯酸 - 硅复合物IPN芯具有通过丙烯酸单体的自由基聚合和硅橡胶的氢化作用形成的IPN（互穿网络）结构。

    Acryl-silicone hybrid impact modifiers and method for preparing the same and vinyl chloride resin compositions having the same
    65.
    发明申请
    Acryl-silicone hybrid impact modifiers and method for preparing the same and vinyl chloride resin compositions having the same 有权
    丙烯酸酯 - 硅氧烷混合冲击改性剂及其制备方法和具有该丙烯酸树脂的氯乙烯树脂组合物

    公开(公告)号：US20070021557A1

    公开(公告)日：2007-01-25

    申请号：US10567000

    申请日：2004-05-13

    Applicant: Kwang-jin Lee ,  Jeong-heon Ahn ,  Hye-kyong Lee

    Inventor： Kwang-jin Lee ,  Jeong-heon Ahn ,  Hye-kyong Lee

    IPC: C08L51/08

    CPC classification number: C08F265/00 ,  C08F265/04 ,  C08F265/06 ,  C08F265/10 ,  C08F285/00 ,  C08F291/00 ,  C08G77/442 ,  C08L27/06 ,  C08L51/00 ,  C08L51/003 ,  Y10S525/902 ,  C08F2/22 ,  C08L2666/24 ,  C08L2666/02

    Abstract: The present invention relates to acryl-silicone hybrid impact modifiers, the method of their manufacture, and vinyl chloride resin compositions containing the above. The acryl-silicone hybrid impact modifier of the present invention is comprised of a) 0.01 to 10 parts by weight of a seed obtained through emulsion copolymerization of vinyl monomers and hydrophilic monomers; b) 60 to 94 parts by weight of an acryl-silicone hybrid rubber core covering the seed in which a polyorganosiloxane rubber phase is dispersed locally onto the inner part and surface of the acrylic rubber core containing alkyl acrylate polymers of which alkyl group has 1 to 8 carbon atoms; and c) 6 to 40 parts by weight of a shell covering the above rubber core and containing alkyl methacrylate polymers of which alkyl group has 1 to 4 carbon atoms. Thermoplastic resins containing the above, particularly by being added to vinyl chloride resins, they have effects of granting superior impact resistance, weatherability, and high gloss.

    Abstract translation: 本发明涉及丙烯酸 - 硅氧烷混合抗冲改性剂，其制造方法和含有上述的氯乙烯树脂组合物。 本发明的丙烯酸 - 硅氧烷混合抗冲击改性剂由以下组成：a）通过乙烯基单体和亲水性单体的乳液共聚得到的种子为0.01〜10重量份; b）将60〜94重量份的丙烯酸 - 硅氧烷混合橡胶核覆盖在其中聚有机硅氧烷橡胶相局部分散在丙烯酸橡胶芯的内部和表面上的种子，所述丙烯酸 - 硅氧烷橡胶核含有烷基具有1〜 8个碳原子; 和c）6至40重量份覆盖上述橡胶芯的壳，并含有烷基具有1至4个碳原子的甲基丙烯酸烷基酯聚合物。 含有上述的热塑性树脂，特别是通过加入到氯乙烯树脂中，它们具有赋予优异的耐冲击性，耐候性和高光泽度的效果。

    Package map data outputting circuit of semiconductor memory device and method for outputting package map data
    66.
    发明授权
    Package map data outputting circuit of semiconductor memory device and method for outputting package map data 失效
    半导体存储装置的封装图数据输出电路及输出封装图数据的方法

    公开(公告)号：US06898133B2

    公开(公告)日：2005-05-24

    申请号：US10179147

    申请日：2002-06-26

    Applicant: Yong-Dae Park ,  Kwang-Jin Lee

    Inventor： Yong-Dae Park ,  Kwang-Jin Lee

    IPC: G11C5/00 ,  G11C29/00 ,  G11C29/48 ,  G11C7/00

    CPC classification number: G11C29/006 ,  G11C5/00 ,  G11C29/48

    Abstract: A package map data outputting circuit of a semiconductor memory device embedded with a test circuit and a method for the same are provided. To improve the reliability of package map data and easily output a greater amount of the package map data, the package map data is stored to package map data registers at the wafer level and then output through the test circuit at the package level.

    Abstract translation: 提供了嵌入有测试电路的半导体存储器件的封装映射数据输出电路及其方法。 为了提高封装图数据的可靠性，并且容易地输出更大量的封装映射数据，封装映射数据被存储到晶片级的封装映射数据寄存器，然后通过封装级的测试电路输出。

    Preparation method of tungsten carbide sintered body for friction stir welding tool
    67.
    发明授权
    Preparation method of tungsten carbide sintered body for friction stir welding tool 有权
    用于摩擦搅拌焊接工具的碳化钨烧结体的制备方法

    公开(公告)号：US09580361B2

    公开(公告)日：2017-02-28

    申请号：US14233424

    申请日：2011-12-09

    Applicant: Hyun Kuk Park ,  Ik Hyun Oh ,  Hee Jun Yoon ,  Hyeon Taek Son ,  Kwang Jin Lee ,  Hee Seon Bang ,  Han Sur Bang

    Inventor： Hyun Kuk Park ,  Ik Hyun Oh ,  Hee Jun Yoon ,  Hyeon Taek Son ,  Kwang Jin Lee ,  Hee Seon Bang ,  Han Sur Bang

    IPC: C04B35/64 ,  B22F3/105 ,  C04B35/56 ,  C04B35/645 ,  B23K20/12 ,  C22C29/08

    CPC classification number: C04B35/64 ,  B22F3/105 ,  B23K20/1245 ,  C04B35/5626 ,  C04B35/645 ,  C04B2235/6562 ,  C04B2235/6581 ,  C04B2235/666 ,  C04B2235/77 ,  C04B2235/96 ,  C22C29/08

    Abstract: The present invention relates to a preparation method of a tungsten carbide sintered body for a friction stir welding tool used in a friction stir welding tool of a high melting point material such as steel, titanium and the like or a dissimilar material such as aluminum, magnesium-steel, titanium and the like. The preparation method comprises the following steps: filling a tungsten carbide (WC) powder in a mold made of a graphite material; mounting the mold filled with tungsten carbide powder in a chamber of a discharge plasma sintering apparatus; making a vacuum inside of the chamber; molding the tungsten carbide powder while maintaining a constant pressure inside the mold and increasing the temperature according to a set heat increase pattern until the temperature reaches a final target temperature; and cooling the inside of the chamber while maintaining the pressure pressurized in the mold after the molding step.

    Abstract translation: 本发明涉及一种用于摩擦搅拌焊接工具的碳化钨烧结体的制备方法，该工具用于诸如钢，钛等的高熔点材料的摩擦搅拌焊接工具或诸如铝，镁之类的异种材料 钛，钛等。 该制备方法包括以下步骤：在由石墨材料制成的模具中填充碳化钨（WC）粉末; 将填充有碳化钨粉末的模具安装在放电等离子体烧结装置的腔室中; 在室内进行真空; 在模具内保持恒定压力的同时成型碳化钨粉末，并根据设定的热量增加模式增加温度，直到温度达到最终目标温度; 并且在模制步骤之后保持在模具中加压的压力同时冷却腔室的内部。

    Pressurized hollow fiber membrane module
    68.
    发明授权
    Pressurized hollow fiber membrane module 有权
    加压中空纤维膜组件

    公开(公告)号：US09034189B2

    公开(公告)日：2015-05-19

    申请号：US14114840

    申请日：2012-06-21

    Applicant: Jae Hee Ryu ,  Yong-Cheol Shin ,  Kwang-Jin Lee ,  Moo-Seok Lee

    Inventor： Jae Hee Ryu ,  Yong-Cheol Shin ,  Kwang-Jin Lee ,  Moo-Seok Lee

    IPC: B01D63/04 ,  B01D69/08 ,  B01D69/12 ,  B01D71/68 ,  B01D71/34 ,  B01D71/48 ,  B01D63/02 ,  B01D69/10

    CPC classification number: B01D63/04 ,  B01D63/021 ,  B01D63/027 ,  B01D69/08 ,  B01D69/10 ,  B01D69/12 ,  B01D71/34 ,  B01D71/48 ,  B01D71/68 ,  B01D2313/23 ,  B01D2325/40

    Abstract: Disclosed is a pressurized hollow fiber membrane module that exhibits improved durability without deterioration in packing density and permeation flux. The pressurized hollow fiber membrane module includes a composite hollow fiber membrane comprising a tubular braid woven by yarns and a polymer film on the outer surface of the tubular braid. At least one of the yarns comprises a small-fineness filament and a medium-fineness filament. The small-fineness filament comprises first monofilaments having a fineness of 0.01 to 0.4 denier, the medium-fineness filament comprises second monofilaments having a fineness higher than 0.4 and lower than 3, and a ratio of thickness of the tubular braid to outer diameter thereof is 15 to 35%.

    Abstract translation: 公开了一种加压中空纤维膜组件，其具有改善的耐久性，而不会降低填充密度和渗透通量。 加压中空纤维膜组件包括复合中空纤维膜，其包括由纱线编织的管状编织物和在管状编织物的外表面上的聚合物膜。 至少一根纱线包括细细丝和中细丝。 小细丝包括细度为0.01至0.4旦尼尔的第一单丝，中细丝包括细度高于0.4且低于3的第二单丝，并且管状编织物的厚度与外径之比为 15到35％。

    Resistive memory devices and memory systems having the same
    70.
    发明授权
    Resistive memory devices and memory systems having the same 有权
    具有相同的电阻式存储器件和存储器系统

    公开(公告)号：US08649204B2

    公开(公告)日：2014-02-11

    申请号：US13364942

    申请日：2012-02-02

    Applicant: Joon Min Park ,  Kwang Jin Lee

    Inventor： Joon Min Park ,  Kwang Jin Lee

    IPC: G11C11/00

    CPC classification number: G11C29/1201 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0061 ,  G11C13/0069 ,  G11C29/18

    Abstract: A nonvolatile memory device includes an array of resistive memory cells and a write driver, which is configured to drive a selected bit line in the array with a reset current pulse, which is responsive to a first external voltage input through a first terminal/pad of the memory device during a memory cell reset operation. The write driver is further configured to drive the selected bit line in sequence with a first set current pulse, which is responsive to the first external voltage, and a second set current pulse, which is responsive to a second external voltage input through a second terminal/pad of the memory device during a memory cell set operation.

    Abstract translation: 非易失性存储器件包括电阻存储器单元阵列和写驱动器，其被配置为以复位电流脉冲驱动阵列中的选定位线，该复位电流脉冲响应于通过第一端子/ 存储器单元重置操作期间的存储器件。 所述写入驱动器进一步被配置为按照响应于所述第一外部电压的第一设定电流脉冲和第二设定电流脉冲依次驱动所选位线，所述第二设定电流脉冲响应于通过第二端子输入的第二外部电压 /存储器单元设置操作的焊盘。

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