公开(公告)号：US20110230582A1

公开(公告)日：2011-09-22

申请号：US13130388

申请日：2009-11-19

申请人： Katsuyuki Kito ,  Satoshi Kobayashi ,  Kunihiko Koyama

发明人： Katsuyuki Kito ,  Satoshi Kobayashi ,  Kunihiko Koyama

IPC分类号： C08J3/28

CPC分类号： C09D11/101

摘要： An energy ray-curable inkjet ink composition comprising polymerizable compounds containing a monofunctional monomer, (A) a reactive oligomer having a rate of elongation of 130% or more and a weight average molecular weight of not less than 800 and less than 3,000 and (B) a reactive oligomer having a rate of elongation of 130% or more and a weight average molecular weight of not less than 3,000 and not more than 8,000, provided that one of the reactive oligomers (A) and (B) is not more than difunctional and the other is not less than difunctional, at least one polymerization initiator selected from the group consisting of (C) an acylphosphine oxide initiator and (D) an α-aminoalkylphenone initiator, a surface tension modifier, and a colorant.

摘要翻译： 一种能量射线固化型喷墨油墨组合物，其包含含有单官能单体的聚合性化合物，（A）伸长率为130％以上，重均分子量为800以上且小于3000的反应性低聚物和（B ）反应性低聚物，其伸长率为130％以上，重均分子量在3000以上8000以下，条件是反应性低聚物（A）和（B）中的一种不大于双官能团 另外不少于二官能团，至少一种选自（C）酰基氧化膦引发剂和（D）α-氨基烷基苯酮引发剂，表面张力调节剂和着色剂的聚合引发剂。

公开(公告)号：US07989332B2

公开(公告)日：2011-08-02

申请号：US12839669

申请日：2010-07-20

申请人： Shunpei Yamazaki ,  Yoshiyuki Kurokawa ,  Yasuhiro Jinbo ,  Satoshi Kobayashi ,  Daisuke Kawae

发明人： Shunpei Yamazaki ,  Yoshiyuki Kurokawa ,  Yasuhiro Jinbo ,  Satoshi Kobayashi ,  Daisuke Kawae

IPC分类号： H01L21/3205

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode, a microcrystalline semiconductor film formed over the gate insulating film, a buffer layer formed over the microcrystalline semiconductor film, a pair of semiconductor films to which an impurity element imparting one conductivity type is added and which are formed over the buffer layer, and wirings formed over the pair of semiconductor films to which the impurity element imparting one conductivity type is added. A part of the gate insulating film or the entire gate insulating film, and/or a part of the microcrystalline semiconductor or the entire microcrystalline semiconductor includes an impurity element which serves as a donor.

摘要翻译： 提出了具有优异电特性的薄膜晶体管，具有薄膜晶体管的显示装置，以及制造薄膜晶体管和显示装置的方法。 薄膜晶体管包括形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的微晶半导体膜，形成在微晶半导体膜上的缓冲层，一对半导体膜，赋予一种导电型的杂质元素 并且形成在缓冲层之上，并且在添加有赋予一种导电类型的杂质元素的一对半导体膜上形成的布线。 栅极绝缘膜或整个栅极绝缘膜的一部分和/或微晶半导体的一部分或整个微晶半导体包括用作供体的杂质元素。

公开(公告)号：US20110175091A1

公开(公告)日：2011-07-21

申请号：US13075436

申请日：2011-03-30

申请人： Satoshi KOBAYASHI ,  Yoshiyuki KUROKAWA ,  Shunpei YAMAZAKI ,  Daisuke KAWAE

发明人： Satoshi KOBAYASHI ,  Yoshiyuki KUROKAWA ,  Shunpei YAMAZAKI ,  Daisuke KAWAE

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/02

CPC分类号： H01L29/41733 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： To provide a display device having a thin film transistor with high electric characteristics and excellent reliability and a manufacturing method thereof. A gate electrode, a gate insulating film provided over the gate electrode, a first semiconductor layer provided over the gate insulating film and having a microcrystalline semiconductor, a second semiconductor layer provided over the first semiconductor layer and having an amorphous semiconductor, and a source region and a drain region provided over the second semiconductor layer are provided. The first semiconductor layer has high crystallinity than the second semiconductor layer. The second semiconductor layer includes an impurity region having a conductivity type different from a conductivity type of the source region and the drain region between the source region and the drain region.

摘要翻译： 提供具有高电特性和优异可靠性的薄膜晶体管的显示装置及其制造方法。 栅电极，设置在栅电极上的栅极绝缘膜，设置在栅绝缘膜上并具有微晶半导体的第一半导体层，设置在第一半导体层上并具有非晶半导体的第二半导体层，以及源极区 并且设置在第二半导体层上的漏极区。 第一半导体层具有比第二半导体层高的结晶度。 第二半导体层包括具有不同于源极区域的导电类型和源极区域与漏极区域之间的漏极区域的导电类型的杂质区域。

公开(公告)号：US07968880B2

公开(公告)日：2011-06-28

申请号：US12391398

申请日：2009-02-24

申请人： Koji Dairiki ,  Takayuki Ikeda ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Hiromichi Godo ,  Daisuke Kawae ,  Takayuki Inoue ,  Satoshi Kobayashi

发明人： Koji Dairiki ,  Takayuki Ikeda ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Hiromichi Godo ,  Daisuke Kawae ,  Takayuki Inoue ,  Satoshi Kobayashi

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78618 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

摘要翻译： 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

公开(公告)号：US07934245B1

公开(公告)日：2011-04-26

申请号：US09534178

申请日：2000-03-24

申请人： Hiroshi Utsunomiya ,  Futoshi Kaibuki ,  Satoshi Kobayashi

发明人： Hiroshi Utsunomiya ,  Futoshi Kaibuki ,  Satoshi Kobayashi

IPC分类号： H04N7/173

CPC分类号： H04L12/40117 ,  H04N5/44513 ,  H04N5/46 ,  H04N21/4104 ,  H04N21/43632 ,  H04N21/488

摘要： In order to accurately display information on the format of different signals from respective different signal source apparatuses as an image, the output signals of analog signal sources are supplied through an interface, signal lines and other interfaces to an analog signal processing circuit. Also, output signals of digital signal sources and output signals of information generating circuits are synthesized by multiplexers and supplied to a demultiplexer through interfaces, buses and an interface. The signals from the separated signal sources are processed in a digital signal processing circuit. The signals from the separated generating circuits are supplied to an information processing circuit, so that an image corresponding to the information indicating the format of the apparatus and/or the output signal is formed, and is synthesized with the signals from the signal processing circuits to be supplied to a monitor.

摘要翻译： 为了准确地显示来自各个不同信号源装置的不同信号的格式的信息作为图像，模拟信号源的输出信号通过接口，信号线和其它接口提供给模拟信号处理电路。 此外，数字信号源的输出信号和信息生成电路的输出信号由多路复用器合成，并通过接口，总线和接口提供给解复用器。 来自分离的信号源的信号在数字信号处理电路中进行处理。 来自分离的发生电路的信号被提供给信息处理电路，从而形成与指示装置的格式和/或输出信号的信息相对应的图像，并且将其与来自信号处理电路的信号合成 提供给监视器。

公开(公告)号：US07897976B2

公开(公告)日：2011-03-01

申请号：US10505051

申请日：2003-02-18

申请人： Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Yuki Tani ,  Hiroaki Yanagita

发明人： Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Yuki Tani ,  Hiroaki Yanagita

IPC分类号： H01L27/15 ,  H01L29/73

CPC分类号： H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

摘要翻译： 本申请的发明是一种场效应晶体管型发光器件，其具有电子注入电极，即源电极，空穴注入电极，即漏电极，设置在源电极和漏电极之间的发射有源元件 以及与两个电极接触的场施加电极，即用于在发射有源部件中诱发电子和空穴的场施加电极，其经由电绝缘部件或绝缘间隙设置在发射有源部件附近 。 发射有源部件由具有电子传输性和空穴传输性的无机半导体材料制成。

公开(公告)号：US20110043576A1

公开(公告)日：2011-02-24

申请号：US12825311

申请日：2010-06-28

申请人： Izumi Nozawa ,  Satoshi Kobayashi

发明人： Izumi Nozawa ,  Satoshi Kobayashi

IPC分类号： B41J2/175

CPC分类号： B41J2/1752

摘要： A cartridge loading/unloading device includes a cartridge holding mechanism 154 which holds a liquid cartridge 80 when a liquid cartridge 80 is inserted by a first predetermined stroke, and a power transmission converting mechanism 153 which ensures a push-in force required for loading of the ink cartridge 80 using the principle of the lever by the rotational motion of a lever arm 160, and which converts the rotational motion of the lever arm 160 into a second predetermined stroke S of movement required for loading of the ink cartridge 80 in a state in which it is held by the cartridge holding mechanism 154. The cartridge holding mechanism 154 includes an integral engaging member 155 which is engaged with the front side of one surface of the ink cartridge 80 in its loading direction across the center of the one surface.

摘要翻译： 盒式装载/卸载装置包括：当液体盒80插入第一预定行程时保持液体盒80的盒保持机构154;以及动力传递转换机构153，其确保装载液体盒80所需的推入力 墨盒80使用杠杆臂160的旋转运动的杠杆的原理，并且将杠杆臂160的旋转运动转换成第二预定行程S，以便将墨盒80装载在 其由盒保持机构154保持。盒保持机构154包括整体的接合构件155，其一体地接合在墨盒80的一个表面的前侧上，该装载方向跨越一个表面的中心。

公开(公告)号：US20110028586A1

公开(公告)日：2011-02-03

申请号：US12921886

申请日：2009-05-15

申请人： Katsuyuki Kito ,  Satoshi Kobayashi ,  Kunihiko Koyama

发明人： Katsuyuki Kito ,  Satoshi Kobayashi ,  Kunihiko Koyama

IPC分类号： C08F2/46

CPC分类号： C09D11/38 ,  C09D11/101

摘要： The present invention provides an energy ray-curable inkjet ink composition which is excellent in stretchability for a printed film and, at the same time, is excellent in curability, adherability and the continuous discharge property. The present invention relates to an energy ray-curable inkjet ink composition containing at least a coloring material, 8 to 60% by mass of a monofunctional monomer (A) having a glass transition temperature of lower than −25° C., 25 to 40% by mass of a difunctional oligomer (B) having an elongation rate of 130% or more at 25° C. when a single oligomer is polymerized, at least one kind of a photopolymerization initiator (C) selected from the group consisting of an acylphosphine oxide initiator (C-1), and a mixed initiator (C-2) of an α-aminoalkylphenone initiator and a thioxanthone initiator, and a surface tension conditioner (D).

摘要翻译： 本发明提供一种印刷膜的伸缩性优异的能量射线固化性喷墨油墨组合物，同时固化性，粘合性，连续的喷出性优异。 本发明涉及至少含有着色材料的能量射线固化型喷墨油墨组合物，其中玻璃化转变温度低于-25℃的单官能单体（A）为8〜60质量％，25〜40 当单体低聚物聚合时，在25℃下的伸长率为130％以上的双官能低聚物（B）的质量％，选自酰基膦的至少一种光聚合引发剂（C） 氧化引发剂（C-1）和α-氨基烷基苯酮引发剂和噻吨酮引发剂的混合引发剂（C-2）和表面张力调节剂（D）。

公开(公告)号：US20100285624A1

公开(公告)日：2010-11-11

申请号：US12838115

申请日：2010-07-16

申请人： Satoshi KOBAYASHI ,  Ikuko KAWAMATA ,  Koji DAIRIKI ,  Shigeki KOMORI ,  Toshiyuki ISA ,  Shunpei YAMAZAKI

发明人： Satoshi KOBAYASHI ,  Ikuko KAWAMATA ,  Koji DAIRIKI ,  Shigeki KOMORI ,  Toshiyuki ISA ,  Shunpei YAMAZAKI

IPC分类号： H01L33/00

CPC分类号： H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.

摘要翻译： 一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。 在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区 在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。

公开(公告)号：US20100173571A1

公开(公告)日：2010-07-08

申请号：US12160435

申请日：2008-04-16

申请人： Satoshi Kobayashi

发明人： Satoshi Kobayashi

IPC分类号： B24B5/307 ,  B24B5/18

CPC分类号： B24B5/18

摘要： To provide a centerless grinding method which facilitates a tooling change and enables automation. A blade 11 is disposed slidable along a first straight line 101, i.e., Y axis, a grinding wheel 7 is disposed slidable along a second straight line 102, i.e., X axis, and a regulating wheel 9 is disposed slidable along a third straight line 103 intersecting with the second straight line at an angle θ2. At a tooling change, then, the blade is moved in a negative direction of the Y axis with an increase in diameter of a workpiece, the grinding wheel is moved in a negative direction of the X axis with an increase in diameter of the workpiece, and the regulating wheel is moved in a positive direction of the Y axis and also in a positive direction of the X axis with an increase in diameter of the workpiece. With this, angles α and β, which a contact angular position reference line S makes with line segments OB and OR, are made always constant.

摘要翻译： 提供一种无心磨削方法，便于刀具更换并实现自动化。 刀片11沿着第一直线101即Y轴可滑动地设置，砂轮7设置成沿着第二直线102即X轴滑动，并且调节轮9可沿第三直线滑动 103与第二条直线以一定角度相交; 2。 在加工变化的情况下，随着工件直径的增加，叶片沿Y轴的负方向移动，砂轮随着工件直径的增加而沿X轴的负方向移动， 并且随着工件直径的增加，调节轮在Y轴的正方向以及X轴的正方向上移动。 由此，接触角位置参考线S与线段OB和OR形成的角度α和＆bgr，使得总是恒定的。