Abstract:
A fuel reforming apparatus including reaction substrates is provided. The reaction substrates of the present invention is made of stainless steel, nickel steel, or chromium steel. Each of the reaction substrates has a channel formed on the surface of the reaction substrate. Reactant for oxidation reaction or for fuel reforming reaction flow through the channel. A catalyst containing layer is formed on the surface of the channel by directly oxidizing the surface of the channel. Therefore, the catalyst containing layer is formed with oxidized steel. A catalyst layer is formed on the catalyst containing layer. A pair of substrates can be laminated to make one substrate a thermal source unit and another a reforming reaction unit.
Abstract:
Provided may be a semiconductor device using magnetic domain wall movement. The semiconductor device may include a magnetic track having a plurality of magnetic domains and a thermal conductive insulating layer configured to contact the magnetic track. The thermal conductive insulating layer may prevent or reduce the magnetic track from being heated due to a current supplied to the magnetic track.
Abstract:
Oscillators and methods of manufacturing and operating an oscillator are provided, the oscillators include a base free layer having a variable magnetization direction, and at least one oscillation unit on the base free layer. The oscillation unit may include a free layer element contacting the base free layer and having a width less than a width of the base free layer, a pinned layer element separated from the free layer element, and a separation layer element between the free layer element and the pinned layer element. A plurality of oscillation units may be arranged on the base free layer.
Abstract:
A magnetic head and a recording apparatus employing the same are provided. The magnetic head includes a recording member, a field inducing member inducing a magnetic field to the recording member, a shield member having the same direction of magnetization as the recording member in a recording operation, and a return path member forming a magnetic path with the recording member.
Abstract:
Provided are information storage devices using movement of magnetic domain walls and methods of operating information storage devices. An information storage device includes a magnetic track and an operating unit. The magnetic track includes a plurality of magnetic domains separated by magnetic domain walls. The size of the operating unit is sufficient to cover at least two adjacent magnetic domains. And, the operating unit may be configured to write/read information to/from a single magnetic domain as well as a plurality of magnetic domains of the magnetic track.
Abstract:
Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.
Abstract:
A bit patterned medium in which an exchange coupling layer induces exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The exchange coupling layer is disposed either over or under a recording layer having a plurality of bits. The exchange coupling layer induces exchange coupling between a bit which is to be recorded and an adjacent bit and reduces a switching field difference resulting from a difference between the magnetization direction of the bit to be recorded and the magnetization direction of neighboring bits due to an exchange coupling force generated during the exchange coupling.
Abstract:
A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storage device includes a magnetic track. The magnetic track includes a plurality of magnetic domain regions and a magnetic domain wall region formed between neighboring magnetic domain regions. The plurality of magnetic domain regions includes a first magnetic domain region and at least one second magnetic domain region having a smaller length than the first magnetic domain region. The information storage device further includes a first unit configured to perform at least one of an information recording operation and an information reproducing operation on the first magnetic domain region, and a magnetic domain wall movement unit configured to move a magnetic domain wall of the magnetic domain wall region.
Abstract:
A fuel reforming apparatus which generates a reformed gas containing hydrogen by reforming a fuel and supplies the reformed gas to a fuel cell body is provided. The fuel reforming apparatus is constructed with a burner which generates a flame by burning the fuel together with the atmospheric air, a reforming reactor which receives thermal energy of the flame and generates the reformed gas through a reforming reaction between the fuel and steam, an evaporator in which a pipeline for allowing the fuel and water to flow is disposed in the direction of the flame sprayed from the burner, with the water being evaporated by using the flame and the fuel and steam being supplied to the reforming reactor, and a spraying unit which is disposed in a direction of the sprayed flame to spray additional air into the evaporator.
Abstract:
An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.