公开(公告)号：US20230170207A1

公开(公告)日：2023-06-01

申请号：US18079160

申请日：2022-12-12

Applicant: ASM IP Holding B.V.

Inventor： Leo Salmi ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L21/762

CPC classification number: H01L21/02203 ,  H01L21/76224 ,  H01L21/0228 ,  H01L21/02227 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/02178

Abstract: A method for filling a gap feature on a substrate surface is disclosed. The method may include: providing a substrate comprising a non-planar surface including one or more gap features; depositing a metal oxide film over a surface of the one or more gap features by a cyclical deposition process; contacting the metal oxide with an organic ligand vapor; and converting at least a portion of the metal oxide film to a porous material thereby filling the one or more gap features. Semiconductor structures including a metal-organic framework material formed by the methods of the disclosure are also disclosed.

公开(公告)号：US11643728B2

公开(公告)日：2023-05-09

申请号：US17303806

申请日：2021-06-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23F1/12 ,  C23C16/56 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/465

CPC classification number: C23C16/56 ,  C23C16/305 ,  C23C16/45534 ,  C23F1/12 ,  H01L21/0262 ,  H01L21/02568 ,  H01L21/465

Abstract: Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O2 as the etching reactant and an inert gas such as N2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

公开(公告)号：US20230067660A1

公开(公告)日：2023-03-02

申请号：US17971684

申请日：2022-10-24

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/18 ,  C23C16/08 ,  C23C16/455

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：US20220115232A1

公开(公告)日：2022-04-14

申请号：US17557131

申请日：2021-12-21

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: Systems for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.

公开(公告)号：US20220002868A1

公开(公告)日：2022-01-06

申请号：US17448586

申请日：2021-09-23

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/30 ,  C23C16/08 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US11155917B2

公开(公告)日：2021-10-26

申请号：US16835849

申请日：2020-03-31

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  C23C16/30 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US20210269915A1

公开(公告)日：2021-09-02

申请号：US17323887

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/455

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US20200340113A1

公开(公告)日：2020-10-29

申请号：US16927509

申请日：2020-07-13

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/40 ,  H01L23/532 ,  H01L21/768

Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

公开(公告)号：US20200161129A1

公开(公告)日：2020-05-21

申请号：US16193789

申请日：2018-11-16

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/04 ,  H01L29/786

Abstract: Methods for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.

公开(公告)号：US10358407B2

公开(公告)日：2019-07-23

申请号：US15729210

申请日：2017-10-10

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C07C49/92 ,  C07C45/77 ,  C23C16/30 ,  C23C16/455

Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.