公开(公告)号：US09935211B2

公开(公告)日：2018-04-03

申请号：US13455282

申请日：2012-04-25

申请人： Alexey Krasnov

发明人： Alexey Krasnov

IPC分类号： H01L31/00 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/0749

CPC分类号： H01L31/022425 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A back contact configuration for a CIGS-type photovoltaic device is provided. According to certain examples, the back contact configuration includes an optical matching layer and/or portion of or including MoSe2 having a thickness substantially corresponding to maxima of absorption of reflected light in CIGS-type absorbers used in certain photovoltaic devices. Certain example methods for making the back contact configuration wherein a thickness of the MoSe2 layer and/or portion can be controlled to be within thickness ranges that correspond to maxima of CIGS light absorption for reflected solar light are also provided.

公开(公告)号：US09082914B2

公开(公告)日：2015-07-14

申请号：US13349964

申请日：2012-01-13

申请人： Alexey Krasnov ,  Jochen Butz ,  Uwe Kriltz

发明人： Alexey Krasnov ,  Jochen Butz ,  Uwe Kriltz

IPC分类号： H01L31/00 ,  H01L31/048 ,  H01L31/0392

CPC分类号： H01L31/02167 ,  H01L31/02168 ,  H01L31/03923 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/18 ,  Y02E10/541

摘要： Certain example embodiments of this invention relate to photovoltaic modules that include high contact angle coatings on one or more outermost major surfaces thereof, and/or associated methods. In certain example embodiments, the high contact angle coatings advantageously reduce the likelihood of electrical losses through parasitic leakage of the electrical current caused by moisture on surfaces of the photovoltaic modules, thereby potentially improving the efficiency of the photovoltaic devices. In certain example embodiments, the high contact angle coatings may be nitrides and/or oxides of or including Si, Ti, Ta, TaCr, NiCr, and/or Cr; hydrophobic DLC; and/or polymer-based coatings. The photovoltaic modules may be substrate-type modules or superstrate-type modules in different example embodiments.

摘要翻译： 本发明的某些示例性实施例涉及在其一个或多个最外主表面上包括高接触角涂层的光伏模块和/或相关方法。 在某些示例性实施例中，高接触角涂层有利地降低了通过由光伏模块表面上的水分引起的电流的寄生泄漏的电损耗的可能性，从而潜在地提高了光伏器件的效率。 在某些示例性实施例中，高接触角涂层可以是氮化物和/或包括Si，Ti，Ta，TaCr，NiCr和/或Cr的或者包括Si， 疏水DLC; 和/或聚合物基涂料。 在不同的示例性实施例中，光伏模块可以是衬底型模块或上覆型模块。

公开(公告)号：US08313620B2

公开(公告)日：2012-11-20

申请号：US13302052

申请日：2011-11-22

申请人： Alexey Krasnov

发明人： Alexey Krasnov

IPC分类号： C23C14/00

CPC分类号： C03C17/2456 ,  C03C2217/212 ,  C03C2218/154 ,  C23C14/086 ,  C23C14/5806 ,  G02F1/13338

摘要： Certain example embodiments of this invention relate to techniques for making a coated article including a transparent conductive indium-tin-oxide (ITO) film supported by a heat treated glass substrate. A substantially sub-oxidized ITO or metallic indium-tin (InSn) film is sputter-deposited onto a glass substrate at room temperature. The glass substrate with the as-deposited film thereon is subjected to elevated temperatures. Thermal tempering or heat strengthening causes the as-deposited film to be transformed into a crystalline transparent conductive ITO film. Advantageously, this may reduce the cost of touch panel assemblies, e.g., because of the higher rates of the ITO deposition in the metallic mode. The cost of touch-panel assemblies may be further reduced through the use of float glass.

摘要翻译： 本发明的一些示例性实施方案涉及制备包括由热处理玻璃基板负载的透明导电铟锡氧化物（ITO）膜的涂覆制品的技术。 在室温下将基本上亚氧化的ITO或金属铟锡（InSn）膜溅射沉积到玻璃基板上。 在其上具有沉积膜的玻璃基板经受升高的温度。 热回火或热强化使得沉积的膜转变成晶体透明导电ITO膜。 有利地，这可以降低触摸面板组件的成本，例如，因为在金属模式中ITO沉积的速率更高。 通过使用浮法玻璃可以进一步降低触摸板组件的成本。

公开(公告)号：US08142035B2

公开(公告)日：2012-03-27

申请号：US11206303

申请日：2005-08-18

申请人： Alexey Krasnov ,  Brent Boyce

发明人： Alexey Krasnov ,  Brent Boyce

IPC分类号： G02B5/08 ,  G02B7/182

CPC分类号： G02B5/0808 ,  C03C17/3615 ,  C03C17/3649 ,  C03C17/3663 ,  C03C17/3689 ,  G02B27/0025 ,  Y10S359/90 ,  Y10T156/1025

摘要： A coated article such as a mirror or window is provided, the coated article including a coating supported by a glass substrate. The coating may include at least a reflective layer in certain example embodiments of this invention. In certain example embodiments, the reflective layer and/or a layer proximate thereto is selectively oxidized or oxidized in areas corresponding to draw lines or other non-uniformities in the glass substrate. This permits reflections from the coated article to be more uniform and/or less distorted.

摘要翻译： 提供诸如镜子或窗户的涂覆制品，所述涂覆制品包括由玻璃基板支撑的涂层。 在本发明的某些示例性实施例中，涂层可以包括至少一层反射层。 在某些示例性实施例中，反射层和/或其附近的层在对应于玻璃衬底中的绘制线或其它不均匀性的区域中被选择性地氧化或氧化。 这允许来自涂覆制品的反射更均匀和/或更少失真。

公开(公告)号：US20110100446A1

公开(公告)日：2011-05-05

申请号：US12591061

申请日：2009-11-05

申请人： Alexey Krasnov

发明人： Alexey Krasnov

IPC分类号： H01L31/0232 ,  C23C14/34

CPC分类号： H01L31/022466 ,  C23C14/086 ,  C23C14/5806 ,  C23C14/5853 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

摘要： Certain example embodiments of this invention relate to a front transparent conductive electrode for solar cell devices (e.g., amorphous silicon or a-Si solar cell devices), and/or methods of making the same. Advantageously, certain example embodiments enable high haze to be realized in the top layer of the thin film stack. In certain example embodiments, an insertion layer comprising ITO or AZO is provided between a layer of AZO and a layer of ITO. The AZO may be deposited at room temperature. The insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided. In certain example embodiments, the layer of ITO may be ion-beam treated so as to roughen a surface thereof. The ion beam treating may be performed a voltage sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.

摘要翻译： 本发明的一些示例性实施例涉及用于太阳能电池器件（例如，非晶硅或a-Si太阳能电池器件）的前透明导电电极和/或其制造方法。 有利地，某些示例性实施例使得能够在薄膜堆叠的顶层中实现高雾度。 在某些示例性实施例中，包括ITO或AZO的插入层设置在AZO层和ITO层之间。 AZO可以在室温下沉积。 提供了插入层，其选择的氧含量使得插入层足以改变与没有设置插入层的情况相比AZO层的结晶生长。 在某些示例性实施例中，ITO层可以进行离子束处理以使其表面变粗糙。 与不提供插入层的情况相比，离子束处理可以进行足以改变AZO层的结晶生长的电压。

公开(公告)号：US20110100445A1

公开(公告)日：2011-05-05

申请号：US12591060

申请日：2009-11-05

申请人： Alexey Krasnov

发明人： Alexey Krasnov

IPC分类号： H01L31/02 ,  H01L31/028 ,  C23C14/34

CPC分类号： C23C14/5853 ,  C23C14/086 ,  C23C14/5806 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50

摘要： Certain example embodiments of this invention relate to a front transparent conductive electrode for solar cell devices (e.g., amorphous silicon or a-Si solar cell devices), and/or methods of making the same. Advantageously, certain example embodiments enable high haze to be realized in the top layer of the thin film stack. In certain example embodiments, an insertion layer comprising ITO or AZO is provided between a layer of AZO and a layer of ITO. The AZO may be deposited at room temperature. The insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided. In certain example embodiments, the layer of ITO may be ion-beam treated so as to roughen a surface thereof. The ion beam treating may be performed a voltage sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.

摘要翻译： 本发明的一些示例性实施例涉及用于太阳能电池器件（例如，非晶硅或a-Si太阳能电池器件）的前透明导电电极和/或其制造方法。 有利地，某些示例性实施例使得能够在薄膜堆叠的顶层中实现高雾度。 在某些示例性实施例中，包括ITO或AZO的插入层设置在AZO层和ITO层之间。 AZO可以在室温下沉积。 提供了插入层，其选择的氧含量使得插入层足以改变与没有设置插入层的情况相比AZO层的结晶生长。 在某些示例性实施例中，ITO层可以进行离子束处理以使其表面变粗糙。 与不提供插入层的情况相比，离子束处理可以进行足以改变AZO层的结晶生长的电压。

公开(公告)号：US07744955B2

公开(公告)日：2010-06-29

申请号：US11194759

申请日：2005-08-02

申请人： Richard Blacker ,  Cory Richardson ,  Alexey Krasnov

发明人： Richard Blacker ,  Cory Richardson ,  Alexey Krasnov

IPC分类号： B05D3/08 ,  B05D5/06 ,  B05D3/02

CPC分类号： C03C17/2453 ,  C03C17/245 ,  C03C2217/211 ,  C03C2217/214 ,  C03C2217/216 ,  C03C2217/24 ,  C03C2217/256 ,  C03C2218/154 ,  C03C2218/32

摘要： A method of making a coated article including a transparent conductive oxide (TCO) film supported by a glass substrate is provided. In certain example embodiments, the coated article including the TCO film on the glass substrate is thermally tempered in a tempering furnace. In certain example embodiments, during tempering flame(s) are provided proximate the exposed surface of the TCO in order to burn off excess oxygen near the TCO surface thereby preventing or reducing oxidation of the TCO during the tempering process. A coated article, that is thermally tempered, made by such a product is also provided.

摘要翻译： 提供一种制造包括由玻璃基板支撑的透明导电氧化物（TCO）膜的涂布制品的方法。 在某些示例性实施例中，包括玻璃基板上的TCO膜的涂覆制品在回火炉中进行热回火。 在某些示例性实施例中，在回火期间，在TCO的暴露表面附近提供火焰以消除TCO表面附近的过量氧，从而防止或减少回火过程中TCO的氧化。 还提供了由这种产品制成的经热回火的涂覆制品。

公开(公告)号：US20100040892A1

公开(公告)日：2010-02-18

申请号：US12588677

申请日：2009-10-23

申请人： Alexey Krasnov ,  Yiwei Lu

发明人： Alexey Krasnov ,  Yiwei Lu

IPC分类号： B32B17/06

CPC分类号： C23C14/086 ,  C03C17/245 ,  C03C2217/216 ,  C03C2217/24 ,  C03C2218/154 ,  C04B35/453 ,  C04B2235/3217 ,  C04B2235/3284 ,  C04B2235/3291 ,  C04B2235/402 ,  C04B2235/408 ,  C04B2235/9653

摘要： A transparent conductive oxide (TCO) based film is formed on a substrate. The film may be formed by sputter-depositing, so as to include both a primary dopant (e.g., Al) and a co-dopant (e.g., Ag). The benefit of using the co-dopant in depositing the TCO inclusive film may be two-fold: (a) it may prevent or reduce self-compensation of the primary dopant by a more proper positioning of the Fermi level, and/or (b) it may promote declustering of the primary dopant, thereby freeing up space in the metal sublattice and permitting more primary dopant to create electrically active centers so as to improve conductivity of the film. Accordingly, the use of the co-dopant permits the primary dopant to be more effective in enhancing conductivity of the TCO inclusive film, without significantly sacrificing visible transmission characteristics. An example TCO in certain embodiments is ZnAlOx:Ag.

摘要翻译： 在基板上形成基于透明导电氧化物（TCO）的膜。 可以通过溅射沉积来形成膜，以便包括主要掺杂剂（例如Al）和共掺杂剂（例如Ag）。 使用共掺杂剂在沉积含TCO的膜中的益处可以是两重的：（a）它可以通过更适当的费米能级定位来防止或减少主要掺杂剂的自补偿，和/或（b ）可以促进主要掺杂剂的分解，从而释放金属亚晶格中的空间，并允许更多的主要掺杂剂产生电活性中心，以便提高膜的导电性。 因此，使用共掺杂剂允许主​​要掺杂剂在不显着牺牲可见透射特性的情况下更有效地增强包含TCO的膜的导电性。 某些实施方案中的实例TCO是ZnAlO x：Ag。

公开(公告)号：US20080163929A1

公开(公告)日：2008-07-10

申请号：US11650564

申请日：2007-01-08

申请人： Alexey Krasnov

发明人： Alexey Krasnov

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  C01G9/00 ,  C01G9/02 ,  C01P2002/52 ,  C01P2006/40 ,  C03C17/36 ,  G02B5/0816 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50

摘要： Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) based front electrode for use in a photovoltaic device is of or includes zinc oxide, or zinc aluminum oxide, doped with yttrium (Y). In certain example embodiments, the addition of the yttrium (Y) to the conductive zinc oxide or zinc aluminum oxide is advantageous in that potential conductivity loss of the electrode can be reduced or prevented. In other example embodiments, a low-E coating may include a layer of or including zinc oxide, or zinc aluminum oxide, doped with yttrium (Y).

摘要翻译： 本发明的某些示例性实施例涉及用于光伏器件等中的电极（例如，前电极）。 在某些示例性实施例中，用于光伏器件的基于透明导电氧化物（TCO）的前电极为掺杂有钇（Y）的氧化锌或氧化锌铝。 在某些示例性实施例中，将钇（Y）添加到导电氧化锌或氧化锌铝是有利的，因为可以减少或防止电极的电导率损失。 在其它示例性实施例中，低E涂层可以包括掺杂有钇（Y）的一层或包括氧化锌或氧化锌铝。

公开(公告)号：US20080047602A1

公开(公告)日：2008-02-28

申请号：US11507660

申请日：2006-08-22

申请人： Alexey Krasnov

发明人： Alexey Krasnov

IPC分类号： H01L31/00

CPC分类号： H01L31/022466 ,  H01L31/022475 ,  H01L31/022483

摘要： This invention relates to a front contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front contact of the photovoltaic device includes a low work-function transparent conductive oxide (TCO) of a material such as tin oxide, zinc oxide, or the like, and a thin high work-function TCO of a material such as oxygen-rich ITO (indium tin oxide) or the like. The high-work function TCO is located between the low work-function TCO and the uppermost semiconductor layer of the photovoltaic device so as to provide for substantial work-function matching between the low work-function TCO and the high work-function uppermost semiconductor layer of the device in order to reduce a potential barrier for holes extracted from the device by the front contact.

摘要翻译： 本发明涉及一种用于诸如光伏器件的电子设备中的前触点。 在某些示例性实施例中，光伏器件的前触点包括诸如氧化锡，氧化锌等的材料的低功函数透明导电氧化物（TCO）和材料的薄的高功函数TCO 例如富氧ITO（氧化铟锡）等。 高功函数TCO位于低功函数TCO和光电器件的最上半导体层之间，以便提供低功函数TCO与高功函数最上半导体层之间的基本功函数匹配 以减少由前触点从设备中提取的孔的潜在屏障。