摘要:
Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. ROC(═O)R1—COOCH2CF2SO3−H+ (1a) RO is OH or C1-C20 organoxy, R1 is a divalent C1-C20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
摘要:
Fluorinated monomers of formula (1) are useful in producing polymers for the formulation of radiation-sensitive resist compositions. R1 is H or monovalent C1-C20 hydrocarbon group, R2 is H, F, methyl or trifluoromethyl, R3 and R4 are H or a monovalent C1-C8 hydrocarbon group, or R3 and R4 may form an aliphatic hydrocarbon ring, and A is a divalent C1-C6 hydrocarbon group
摘要:
Cyclic structure-bearing fluorinated monomers having formula (1) wherein Z is a divalent organic group containing a polymerizable unsaturated group are useful to produce polymers for the manufacture of radiation-sensitive resist compositions which are fully transparent to radiation having a wavelength of up to 300 nm and have improved development properties.
摘要:
Chemically amplified resist compositions comprising nitrogen-containing organic compounds having an aromatic carboxylic acid ester structure have an excellent resolution and provide a precise pattern profile and are useful in microfabrication using electron beams or deep-UV light.
摘要:
Fluorine-containing silicon compounds having the general formula (1): wherein X1, X2, and X3 each are hydrogen, hydroxyl, halogen, a straight, branched or cyclic alkoxy group of 1 to 6 carbon atoms, or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, Y is a divalent organic group, R1 and R2 are each independently hydrogen or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, or R1 and R2 may bond together to form a ring with the carbon atom to which they are attached silicone resins obtained from the compounds of formula (1) has an appropriate acidity to enable formation of a finer pattern while minimizing the pattern collapse by swelling when used in a resist composition.
摘要:
Fluoroalcohol compounds of formula (4) are prepared by reacting a fluorine compound of formula (1) with reducing agents or organometallic reagents of formulas (2) and (3) wherein R1 is H or a monovalent C1-C20 hydrocarbon group in which any —CH2— moiety may be replaced by —O— or —C(═O)—, R2 is H or a monovalent C1-C6 hydrocarbon group, R3 and R4 are H or a monovalent C1-C8 hydrocarbon group, and M1 is Li, Na, K, Mg, Zn, Al, B, or Si. From the fluoroalcohol compounds, fluorinated monomers can be produced in a simple and economic way, which are useful in producing polymers for the formulation of radiation-sensitive resist compositions.
摘要:
An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, R4 is branched or cyclic, tertiary C5-C20 alkyl group, Z is a divalent C1-C10 hydrocarbon group, and k is 0 or 1. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译:提供下式(1)的酯化合物:R 1是H,甲基或CH 2 CO 2 R 3,R 2是H,甲基或CO 2 R 3,R 3是C 1 -C 15烷基,R 4是支链或环状的,叔C5-C20烷基,Z 是二价C1-C10烃基,k为0或1.含有由酯化合物得到的聚合物作为基础树脂的抗蚀剂组合物对高能辐射敏感,具有优异的灵敏度,分辨率和耐蚀刻性,以及 适用于使用电子束或深紫外线的微图案。
摘要:
A polymer comprising units of formula (1-1) or (1-2) and having a weight average molecular weight of 1,000 to 500,000 is provided. R1 is an acid labile group, R2 is H or straight or branched C1-4 alkyl, Z is a tetravalent C2-10 hydrocarbon group, and k=0 or 1. A resist composition comprising the polymer as a base resin has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.
摘要:
Tetrahydrofuran compounds of formula (1) wherein the broken line represents a single bond, a divalent organic group, or a structure in which the alicyclic structure in the form of norbornene or tetracyclo[4.4.0.12,5.17,10]dodecene and the tetrahydrofuran cyclic structure share one or two constituent carbon atoms, and k is 0 or 1 are novel and useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography
摘要:
The present invention provides novel tertiary alcohol compounds which are useful as monomers for the preparation of photoresist materials having high transparency and a great affinity for the substrate and hence suitable for use in photolithography using a light source comprising preferably light having a wavelength of 300 nm or less and more preferably light emitted from an ArF excimer laser. Specifically, the present invention provides tertiary alcohols compounds represented by the following general formula (1): wherein R1 and R2 each independently represent a straigh-chain, branched or cyclic alkyl group having 1 to 10 carbon atoms, in which some or all of the hydrogen atoms on the constituent carbon atoms may be replaced by a halogen atom or halogen atoms, or R1 and R2 may be joined together to form an aliphatic hydrocarbon ring; Z represents a straight-chain, branched or cyclic divalent organic group having 2 to 10 carbon atoms; and k is 0 or 1.