摘要:
The invention provides a method of manufacturing a flash memory device. Nitride film spacers are formed on sidewalls of protruded isolation films. A recess is formed in a semiconductor substrate by a self-aligned etch process using the nitride film spacers as masks. It is therefore possible to form a uniform recess over the entire wafer. Furthermore, a floating gate is formed on the semiconductor substrate including the recess in a self-aligned manner. Accordingly, a contact area between the floating gate and the semiconductor substrate can be increased as large as a recess surface area.
摘要:
The present invention discloses a fiber Bragg grating sensor system. The system according to the present invention comprises a wavelength tunable laser; a coupler for splitting output light from the wavelength tunable laser into two directions; a reference wavelength generating unit for receiving one directional output light from the coupler and for generating reference wave-lengths and an absolute reference wavelength in order to measure real-time wavelengths of the wavelength tunable laser; a fiber Bragg grating array for receiving the other directional output light from the coupler and for reflecting lights at each of the wave-lengths of the grating therein; a fiber grating wavelength sensing unit for measuring the time when each of the reflected lights from the fiber Bragg grating array is detected; a signal processing unit for figuring wavelength variation information with the use of the measured signals from the reference wavelength generating unit and for obtaining each of wavelengths of the detected lights from the fiber grating wavelength sensing unit; and a laser wavelength control feedback unit for applying AC voltage and DC voltage to the wavelength tunable filter in the wavelength tunable laser. Also, polarization dependency in the sensor system can be removed further installing a depolarizer or a polarization scrambler at the output end of the wavelength tunable laser. By applying the present invention, measurement accuracy of the grating sensor system 20 can be improved due to enhanced wavelength stability and suppression of polarization dependency. Therefore, the fiber Bragg grating sensor system based on the present invention would replace conventional structure/construction diagnosis systems.
摘要:
The present invention is related to a method for controlling data transmission in a wireless network system including a plurality of nodes. In accordance with the present invention, a duty cycle of a buffer of a node is configured to be adjusted according to a threshold value and a priority of a data to improve energy efficiency according to a variation of a network traffic, guarantee a prioritized transmission of an emergency data, prevent exclusive use of transmission medium by a certain node, and maximize a packet process rate.
摘要:
A method of manufacturing a header pipe for a heat exchanger, including (a) forming a header pipe as a single body with a vertically separating panel between first and second channels, including a plurality of slots through the pipe adapted to connect to cooling fluid tubes of a heat exchanger, (b) introducing a punch into the inside of one of the channels of the header pipe with more than one nipple facing one side of the separating panel, (c) inserting a die into the inside of the other of the channels of the header pipe with punching holes aligned with the punching nipples and the other side of the separating panel, (d) inserting a pressuring pole of a pressuring device through the header pipe slots into the one channel, and (e) moving the pressuring pole to press the punch toward the separating panel to punch more than one hole into the separating panel.
摘要:
A MoSi2—Si3N4 composite coating which is coated on a surface of base materials which are molybden, molybden alloy, molybden-coated niobium or molybden-coated niobium alloy and a manufacturing method thereof. The MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a Mo2N diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N diffusion layer, or the MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a MoSi2 diffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSi2 diffusion layer into a Mo5Si3 diffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a Mo2N—Si3N4 composite diffusion layer by vapor-depositing of nitrogen on the surface of the Mo5Si3 diffusion layer by the CVD method and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N—Si3N4 composite diffusion layer. The MoSi2—Si3N4 composite coating manufactured by the above method is characterized as a structure in which Si3N4 particles are distributed in a MoSi2 grain boundary of equiaxed grains, thus to improve cyclic oxidation resistance of the base material, improve low-temperature oxidation resistance, and improve mechanical properties of the coating. Therefore, transmission of fine cracks by the thermal stress can be restrained.
摘要:
A method of forming a floating gate electrode in a flash memory device. The method includes forming an isolation film in an inactive region so that a step with a predetermined thickness can be generated between an active region and the inactive region, which are defined in a semiconductor substrate, sequentially forming a tunnel oxide film, a polysilicon film for floating gate electrode and an anti-reflection film on the entire surface in which the isolation film is formed, and then forming photoresist patterns in predetermined regions of the anti-reflection film. The method further includes patterning the anti-reflection film using the photoresist patterns as an etch mask to form a patterned anti-reflection film in which a bottom surface is wider than a top surface and a slope is formed on sidewalls, and pattering the polysilicon film for the floating gate electrode, the tunnel oxide film and a predetermined thickness of the isolation film using the patterned anti-reflection film as an etch mask, thus forming the floating gate electrode having a slope on sidewalls.
摘要:
A backlight assembly and an LCD device containing the same include a plurality of light source modules containing sequentially arranged red, green, green, blue and red LEDs. The backlight assembly can improve color realization ratio and light efficiency in an LCD device by uniform illumination of an LCD panel with color-mixed white-color light.
摘要:
A plasma display panel having higher light-emitting luminance and efficiency of a discharge cell includes: plurality of first barriers successively formed on a substrate at predetermined intervals; a plurality of first sustain electrodes formed at a width more than 40% of a pixel pitch, which is an overall distance of four of the barriers, to be orthogonal to the first barriers; a plurality of second sustain electrodes spaced apart from the first sustain electrodes at a distance less than 20% of the pixel pitch and mated with the first sustain electrodes one by one; a dielectric layer formed at a thickness of 25 μm or more to cover the first and second sustain electrodes; and a plurality of pads formed on some of the dielectric layer corresponding to the first sustain electrodes and the second sustain electrodes in each discharge cell.
摘要:
Disclosed is a controller for driving current of a semiconductor device having an over-driving function, the controller comprising: a load means supplied with an internal voltage; a plurality of switching means, each of which has a first terminal connected to an external voltage and a second terminal connected to the load means, wherein at least one of the plurality of switching means is selectively turned on/off according to an voltage level of the external voltage.
摘要:
Self-moving mechanisms and slides incorporating the same are provided. A slide has a first member and a second member slidably coupled to the first member. A self moving mechanism is coupled to the second slide members and engages the first slide member for moving the first slide member relative to the second slide member.