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公开(公告)号：US5296987A
公开(公告)日：1994-03-22
申请号：US894389
申请日：1992-06-05
申请人： Thomas C. Anthony , James A. Brug
发明人： Thomas C. Anthony , James A. Brug
CPC分类号： G11B5/3906 , G11B5/3954
摘要： A method for reducing Barkhausen noise in dual stripe magnetoresistive recording heads. The topography of the bottom conductor is controlled, specifically the conductor sidewall angle at the edge of the track is defined to be less than 45.degree. from the substrate plane. Restricting the conductor sidewall profile in this manner eliminates sources of magnetic domain nucleation.
摘要翻译： 一种用于减少双条磁阻记录头中的巴克豪森噪声的方法。 控制底部导体的形貌，具体来说，轨道边缘处的导体侧壁角度定义为距离衬底平面小于45度。 以这种方式限制导体侧壁轮廓消除了磁畴成核的来源。
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62.发明授权
公开(公告)号：US4853080A
公开(公告)日：1989-08-01
申请号：US284166
申请日：1988-12-14
申请人： Thomas C. Anthony
发明人： Thomas C. Anthony
CPC分类号： G11B5/3163 , C23F4/00 , G03F7/094 , H05K3/143
摘要： A lift-off process for patterning bottom shields used in thin film magnetic recording heads. The lift-off process comprises the steps of depositing a first layer of resist material (22) on a substrate (20) and hard baking the resist material (22). A transfer layer (24) is deposited over the first layer of resist material (22) and a second layer of resist material (26) is deposited on top of the transfer layer (24). The second layer of resist material (24) is then patterned and developed. The patterned structure is then etched to form a mask structure wherein the transfer layer (24) overhangs the first layer of resist material (22). An adhesion layer (30) and an amorphous magnetic alloy material (32) are then sequentially deposited on the exposed surface of the substrate (20). The amorphous magnetic alloy material (32) is sputter deposited at a pressure of about 3.4 mT, a condition that resists the stress in the amorphous alloy material to less than 10.sup.9 dynes per square centimeter. Low stress is required to preserve the integrity of the mask structure. The mask layers and unwanted amorphous allow material (32) are removed using ultrasonic agitation in acetone. This process results in a shield pattern having tapered sidewalls which enhance the reliability of subsequently deposited conductor metallization.
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公开(公告)号：US08892005B2
公开(公告)日：2014-11-18
申请号：US13459509
申请日：2012-04-30
申请人： Quang P. Lam , Michael H. Lee , Omer Gila , Thomas C. Anthony , Seongsik Chang , Paul F. Matheson
发明人： Quang P. Lam , Michael H. Lee , Omer Gila , Thomas C. Anthony , Seongsik Chang , Paul F. Matheson
IPC分类号： G03G15/02
CPC分类号： G03G15/0233
摘要： Printer charging blades and printers are disclosed. An example charging blade for a printer includes an insulating layer to contact a photo imaging surface at an angle to apply pressure to the photo imaging surface, the pressure to control an amount of material present on the photo imaging surface, and a conductive layer attached to a side of the insulating layer, the conductive layer to be charged and to apply a first charge to the photo imaging surface.
摘要翻译： 公开了打印机充电刀片和打印机。 用于打印机的示例性充电刮刀包括以一定角度接触光成像表面的绝缘层，以向光学成像表面施加压力，控制存在于光成像表面上的材料的量的压力，以及附着到 绝缘层的一侧，要被充电的导电层并且向光致成像表面施加第一电荷。
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公开(公告)号：US20080299680A1
公开(公告)日：2008-12-04
申请号：US12187833
申请日：2008-08-07
IPC分类号： H01L21/00
CPC分类号： G11C11/15
摘要： Methods for creating a memory device can include depositing a sense layer, patterning the sense layer to form a plurality of magnetic data cells, depositing a separation layer over the plurality of data cells, depositing a reference layer over the separation layer, and patterning the reference layer to form an elongated magnetic reference cell wherein the elongated magnetic reference cell extends uninterrupted along more than one of the plurality of magnetic data cells.
摘要翻译： 用于创建存储器件的方法可以包括沉积感测层，图案化感测层以形成多个磁性数据单元，在多个数据单元上沉积分离层，在分离层上沉积参考层， 以形成细长的磁性参考单元，其中细长磁性参考单元沿多个磁性数据单元中的一个以上不间断地延伸。
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公开(公告)号：US07391641B2
公开(公告)日：2008-06-24
申请号：US11285991
申请日：2005-11-23
申请人： Manish Sharma , Lung Tran , Thomas C. Anthony
发明人： Manish Sharma , Lung Tran , Thomas C. Anthony
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08
摘要： An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
摘要翻译： 包括多个存储器单元的示例性存储器阵列，每个存储器单元包括第一铁磁层，通过非磁性分离层与第一铁磁层隔开的第二铁磁层，并且通过非磁性分离层磁耦合到第一铁磁层，并通过 来自第一铁磁层的去磁场，第二铁磁层上方的间隔层，以及间隔层上方的基准层。 第一铁磁层，非磁性分离层和第二铁磁层组合起来作为存储单元的数据层。
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公开(公告)号：US06906941B2
公开(公告)日：2005-06-14
申请号：US10624175
申请日：2003-07-22
申请人： Lung Tran , Thomas C. Anthony
发明人： Lung Tran , Thomas C. Anthony
CPC分类号： G11C11/16 , G11C11/1675
摘要： The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.
摘要翻译： 本发明包括堆叠磁存储器结构。 磁存储器结构包括堆叠磁存储器结构。 第一层包括第一多个磁性隧道结。 形成与第一层相邻的第二层。 第二层包括第二多个磁性隧道结。 层叠的磁存储器结构还包括连接到第一多个磁隧道结中的每一个和第二多个磁性隧道结的公共第一组导体。
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公开(公告)号：US06819586B1
公开(公告)日：2004-11-16
申请号：US10692841
申请日：2003-10-24
IPC分类号： G11C1114
CPC分类号： G11C11/16 , G11C11/1675
摘要： An exemplary array of thermally-assisted magnetic memory structures, each of the memory structures comprises a memory cell, a write conductor contacting the memory cell, the write conductor selecting the memory cell in a first coordinate during a write operation, and a heating system contacting the memory cell. The heating system heats the memory cell during the write operation and selects the memory cell by the heating in a second coordinate.
摘要翻译： 一种热辅助磁存储器结构的示例性阵列，每个存储结构包括存储单元，与存储单元接触的写入导体，写入导体在写入操作期间以第一坐标选择存储单元，以及加热系统接触 存储单元。 加热系统在写入操作期间加热存储单元，并通过加热在第二坐标中选择存储单元。
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公开(公告)号：US06791857B2
公开(公告)日：2004-09-14
申请号：US10668442
申请日：2003-09-23
IPC分类号： G11C506
CPC分类号： G11C11/16 , H01L27/222
摘要： A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
摘要翻译： 用于磁存储单元的写线结构包括写入导体，其具有面向存储单元的前表面，后表面和两个侧表面。 包覆层邻近写入导体的前表面的一部分设置，其中包层终止于与写入导体的前表面相邻的间隔开的第一和第二极。 数据存储层可操作地定位在包层附近。 极之间的距离小于写导体的宽度。 数据存储层的宽度可以大于或小于极之间的距离。
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公开(公告)号：US06661688B2
公开(公告)日：2003-12-09
申请号：US10005423
申请日：2001-12-05
IPC分类号： G11C506
CPC分类号： G11C11/16 , H01L27/222
摘要： A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.
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公开(公告)号：US06611039B2
公开(公告)日：2003-08-26
申请号：US09964770
申请日：2001-09-28
申请人： Thomas C. Anthony
发明人： Thomas C. Anthony
IPC分类号： H01L2900
CPC分类号： H01L23/5252 , H01L21/76838 , H01L21/76877 , H01L23/5226 , H01L23/5256 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Vertically oriented nano-circuits including fuses and resistors allow for significant densities to be achieved. The vertically oriented nano-circuits can be fabricated using standard known processes such as Damascene, wet etching, reactive etching, etc. Thus little additional capital expenditure is required other than to acquire present state-of-the-art equipment. Devices using these vertically oriented nano-circuits are also inexpensive to manufacture.
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