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公开(公告)号：US5930087A
公开(公告)日：1999-07-27
申请号：US974420
申请日：1997-11-20
Applicant: James A. Brug , Manoj K. Bhattacharyya , Lung T. Tran , Thomas C. Anthony
Inventor： James A. Brug , Manoj K. Bhattacharyya , Lung T. Tran , Thomas C. Anthony
CPC classification number: B82Y25/00 , B82Y10/00 , G11B5/33 , G11B5/332 , G11B5/3903 , G11B5/3909 , G11B5/3919 , G11B5/40 , H01F10/3268 , G11B19/04 , G11B5/11 , G11B5/3912 , G11B5/3967
Abstract: A robust recording head with a spin tunneling sensing element separated from an interface between the recording head and a recording media so as not to be affected by collisions and other ill effects at the interface between the recording head and the recording media. The spin tunneling sensing element includes a pair of magnetic elements wherein one of the magnetic elements functions as a flux guide that conducts magnetic flux emanating from the recording media away from the interface to an active area of the spin tunneling sensing element.
Abstract translation: 一种坚固的记录头，其具有与记录头和记录介质之间的接口分开的自旋隧道感测元件，以便不受记录头和记录介质之间的界面处的碰撞和其它不良影响的影响。 自旋隧道感测元件包括一对磁性元件，其中一个磁性元件用作将从记录介质发出的磁通远离界面移动到自旋隧道感应元件的有效区域的磁通引导件。
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2.发明授权Stabilization of magnetoresistive sensors using the longitudinal field produced by the current in the contact leads 失效使用由接触引线中的电流产生的纵向磁场来稳定磁阻传感器
公开(公告)号：US5216560A
公开(公告)日：1993-06-01
申请号：US762244
申请日：1991-09-19
Applicant: James A. Brug , Thomas C. Anthony
Inventor： James A. Brug , Thomas C. Anthony
CPC classification number: G11B5/3903 , G01R33/09 , G01R33/096 , G11B5/3954
Abstract: A magnetoresistive sensor having a longitudinal field that is produced along its axis and that stabilizes the sensor. The longitudinal field is produced by the current in conductors that are connected to the magnetoresistive sensor elements. By controlling the direction and distribution of the current in the conductors, a longitudinal field is produced that has the required direction and magnitude to stabilize the single domain state of the sensor. The resulting lack of domain wall motion in the sensor during operation prevents instabilities in its electrical output, commonly known as Barkhausen noise. Four different sensor designs are provided that include two single element sensors with two conductors, a dual element sensor with four conductors, and a dual element sensor with three conductors. The ease of implementation makes the stabilized sensor of the present invention superior to conventional approaches that rely on permanent magnets or exchange coupled layers to provide longitudinal bias.
Abstract translation: 磁阻传感器具有沿其轴线产生并使传感器稳定的纵向场。 纵向场由连接到磁阻传感器元件的导体中的电流产生。 通过控制导体中电流的方向和分布，产生具有所需方向和幅度以稳定传感器的单畴状态的纵向场。 传感器在操作过程中由于缺少畴壁运动，可防止其电气输出不稳定，通常称为巴克豪森噪声。 提供了四种不同的传感器设计，其中包括两个单元件传感器，两个导体，一个双元件传感器，四个导体和一个双元件传感器，三个导体。 实现的便利性使得本发明的稳定的传感器优于依靠永磁体或交换耦合层提供纵向偏压的常规方法。
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3.发明授权Method of fabricating an MRAM device including spin dependent tunneling junction memory cells 有权制造包括自旋相关隧道结存储器单元的MRAM器件的方法公开(公告)号：US06727105B1
公开(公告)日：2004-04-27
申请号：US09514934
申请日：2000-02-28
Applicant: James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
Inventor： James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
IPC: H01L2100
CPC classification number: H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01L27/222 , H01L43/08
Abstract: A spin dependent tunneling (“SDT”) junction of a memory cell for a Magnetic Random Access Memory (“MRAM”) device includes a pinned ferromagnetic layer, followed by an insulating tunnel barrier and a sense ferromagnetic layer. During fabrication of the MRAM device, after formation of the pinned layer but before formation of the insulating tunnel barrier, an exposed surface of the pinned layer is flattened. The exposed surface of the pinned layer may be flattened by an ion etching process.
Abstract translation: 用于磁随机存取存储器（“MRAM”）器件的存储器单元的自旋相关隧道（“SDT”）结包括钉扎铁磁层，随后是绝缘隧道势垒和感测铁磁层。 在制造MRAM器件期间，在形成钉扎层之后但在形成绝缘隧道势垒之前，被钉扎层的暴露表面变平。 被钉扎层的暴露表面可以通过离子蚀刻工艺变平。
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公开(公告)号：US06205051B1
公开(公告)日：2001-03-20
申请号：US09522269
申请日：2000-03-09
Applicant: James A. Brug , Thomas C. Anthony , Manoj K. Bhattarcharyya
Inventor： James A. Brug , Thomas C. Anthony , Manoj K. Bhattarcharyya
IPC: G11C1114
Abstract: A stabilized magnetic memory cell including a data storage layer having an interior region and a pair of end regions near a pair of opposing edges of the data storage layer and a stabilizing material that pins a magnetization in the end regions to a predetermined direction. A method for stabilizing a magnetic memory cell includes the steps of applying a magnetic field that rotates a magnetization in a pair of opposing side regions of a data storage layer of the magnetic memory cell toward a predetermined direction and that reduces free poles in a pair of opposing end regions of the magnetic memory cell, thereby reducing the likelihood of unpredictable switching behavior in the end regions.
Abstract translation: 一种稳定磁存储单元，包括具有在数据存储层的一对相对边缘附近的内部区域和一对端部区域的数据存储层，以及稳定材料，其将端部区域中的磁化引导至预定方向。 一种用于稳定磁存储单元的方法包括以下步骤：施加磁场，该磁场将磁存储单元的数据存储层的一对相对侧区域的磁化旋转到预定方向，并且减小一对 磁存储单元的相对的端部区域，从而降低端部区域中不可预测的开关行为的可能性。
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公开(公告)号：US06424565B1
公开(公告)日：2002-07-23
申请号：US09561317
申请日：2000-04-28
Applicant: James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
Inventor： James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
IPC: G11C1114
Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The solid-state memory includes circuitry for reducing leakage current among the conductors thereby increasing signal to noise ratio during read operations.
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Patent Agency Ranking
公开(公告)号：US06169686A
公开(公告)日：2001-01-02
申请号：US08974925
申请日：1997-11-20
Applicant: James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
Inventor： James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
IPC: G11C1114
CPC classification number: H01L43/12 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L27/224
Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
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公开(公告)号：US6072717A
公开(公告)日：2000-06-06
申请号：US146819
申请日：1998-09-04
Applicant: James A. Brug , Thomas C. Anthony , Manoj K. Bhattarcharyya
Inventor： James A. Brug , Thomas C. Anthony , Manoj K. Bhattarcharyya
Abstract: A stabilized magnetic memory cell including a data storage layer having an interior region and a pair of end regions near a pair of opposing edges of the data storage layer and a stabilizing material that pins a magnetization in the end regions to a predetermined direction. A method for stabilizing a magnetic memory cell includes the steps of applying a magnetic field that rotates a magnetization in a pair of opposing side regions of a data storage layer of the magnetic memory cell toward a predetermined direction and that reduces free poles in a pair of opposing end regions of the magnetic memory cell, thereby reducing the likelihood of unpredictable switching behavior in the end regions.
Abstract translation: 一种稳定磁存储单元，包括具有在数据存储层的一对相对边缘附近的内部区域和一对端部区域的数据存储层，以及稳定材料，其将端部区域中的磁化引导至预定方向。 一种用于稳定磁存储单元的方法包括以下步骤：施加磁场，该磁场将磁存储单元的数据存储层的一对相对侧区域的磁化旋转到预定方向，并且减小一对 磁存储单元的相对的端部区域，从而降低端部区域中不可预测的开关行为的可能性。
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公开(公告)号：US06607924B2
公开(公告)日：2003-08-19
申请号：US09871387
申请日：2001-05-31
Applicant: James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
Inventor： James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
IPC: H01L2100
CPC classification number: H01L43/12 , B82Y10/00 , G11C11/15 , H01L27/224
Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
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9.发明授权Improved magnetoresistive transducer with substantially perpendicular easy axis 失效改进的磁阻换能器具有基本垂直的容易轴
公开(公告)号：US5307226A
公开(公告)日：1994-04-26
申请号：US894415
申请日：1992-06-05
Applicant: James A. Brug , Thomas C. Anthony , Victor W. Hesterman , Steven Naberhuis
Inventor： James A. Brug , Thomas C. Anthony , Victor W. Hesterman , Steven Naberhuis
CPC classification number: G11B5/3932 , G11B5/3903 , G11B5/3954
Abstract: A magnetoresistive transducer includes at least one magnetoresistive element having a transverse easy axis. The use of a transverse easy axis prevents magnetic domains from forming in the magnetoresistive elements and results in a noise-free device. Various techniques for producing a transverse easy axis include the use of stress, and a magneto strictive material, during the formation of the element to orient the anisotropy of the element transverse to orient the anisotropy of the element transverse to the element, formation of the element in the presence of a magnetic field, high temperature anneal of the element, or any other method of forming the element with a prebiased state.
Abstract translation: 磁阻换能器包括至少一个具有横向容易轴的磁阻元件。 使用横向易轴防止在磁阻元件中形成磁畴，并导致无噪声的装置。 用于产生横向容易轴的各种技术包括在形成元件期间使用应力和磁致伸缩材料，以横向定向元件的各向异性以定向横向于元件的元件的各向异性，元件的形成 在存在磁场的情况下，元件的高温退火，或以预偏置状态形成元件的任何其它方法。
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公开(公告)号：US5296987A
公开(公告)日：1994-03-22
申请号：US894389
申请日：1992-06-05
Applicant: Thomas C. Anthony , James A. Brug
Inventor： Thomas C. Anthony , James A. Brug
CPC classification number: G11B5/3906 , G11B5/3954
Abstract: A method for reducing Barkhausen noise in dual stripe magnetoresistive recording heads. The topography of the bottom conductor is controlled, specifically the conductor sidewall angle at the edge of the track is defined to be less than 45.degree. from the substrate plane. Restricting the conductor sidewall profile in this manner eliminates sources of magnetic domain nucleation.
Abstract translation: 一种用于减少双条磁阻记录头中的巴克豪森噪声的方法。 控制底部导体的形貌，具体来说，轨道边缘处的导体侧壁角度定义为距离衬底平面小于45度。 以这种方式限制导体侧壁轮廓消除了磁畴成核的来源。
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