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    Self-aligned pitch split for unidirectional metal wiring
    61.
    发明授权
    Self-aligned pitch split for unidirectional metal wiring 有权
    用于单向金属布线的自对准螺距分割

    公开(公告)号：US09472499B2

    公开(公告)日：2016-10-18

    申请号：US13972178

    申请日：2013-08-21

    Applicant: International Business Machines Corporation

    Inventor： Josephine B. Chang ,  Michael A. Guillorn ,  Eric A. Joseph ,  Hiroyuki Miyazoe

    IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L23/48

    CPC classification number: H01L23/528 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/48 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Self-aligned pitch split techniques for metal wiring involving a hybrid (subtractive patterning/damascene) metallization approach are provided. In one aspect, a method for forming a metal wiring layer on a wafer includes the following steps. A copper layer is formed on the wafer. A patterned hardmask is formed on the copper layer. The copper layer is subtractively patterned using the patterned hardmask to form a plurality of first copper lines. Spacers are formed on opposite sides of the first copper lines. A planarizing dielectric material is deposited onto the wafer, filling spaces between the first copper lines. One or more trenches are etched in the planarizing dielectric material. The trenches are filled with copper to form a plurality of second copper lines that are self-aligned with the first copper lines. An electronic device is also provided.

    Abstract translation: 提供了涉及混合（消减图案/镶嵌）金属化方法的金属布线的自对准间距分割技术。 一方面，在晶片上形成金属配线层的方法包括以下步骤。 在晶片上形成铜层。 在铜层上形成图案化的硬掩模。 使用图案化的硬掩模对铜层进行减法图案化以形成多条第一铜线。 隔板形成在第一铜线的相对侧上。 将平坦化介电材料沉积到晶片上，填充第一铜线之间的空间。 在平坦化介电材料中蚀刻一个或多个沟槽。 沟槽用铜填充以形成与第一铜线自对准的多条第二铜线。 还提供电子设备。

    Uniform critical dimension size pore for PCRAM application
    62.
    发明授权
    Uniform critical dimension size pore for PCRAM application 有权
    PCRAM应用的均匀临界尺寸孔隙

    公开(公告)号：US09166165B2

    公开(公告)日：2015-10-20

    申请号：US14174777

    申请日：2014-02-06

    Applicant: International Business Machines Corporation ,  Macronix International Co., Ltd.

    Inventor： Matthew J. Breitwisch ,  Roger W. Cheek ,  Chung H. Lam ,  Hsiang-Lan Lung ,  Eric A. Joseph ,  Alejandro G. Schrott

    IPC: H01L21/00 ,  H01L45/00

    CPC classification number: H01L45/1683 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148

    Abstract: A memory cell and a method of making the same, that includes insulating material deposited on a substrate, a bottom electrode formed within the insulating material, a plurality of insulating layers deposited above the bottom electrode and at least one of which acts as an intermediate insulating layer. A via is defined in the insulating layers above the intermediate insulating layer. A channel is created for etch with a sacrificial spacer. A pore is defined in the intermediate insulating layer. All insulating layers above the intermediate insulating layer are removed, and the entirety of the remaining pore is filled with phase change material. An upper electrode is formed above the phase change material.

    Abstract translation: 存储单元及其制造方法，其包括沉积在基板上的绝缘材料，形成在绝缘材料内的底部电极，沉积在底部电极上方的多个绝缘层，并且其中至少一个用作中间绝缘层 层。 在中间绝缘层上方的绝缘层中限定通孔。 创建一个通道用于用牺牲隔离物进行蚀刻。 在中间绝缘层中限定孔。 去除中间绝缘层之上的所有绝缘层，并且剩余的孔的整个填充有相变材料。 在相变材料上形成上电极。

    Catalytic etch with magnetic direction control
    63.
    发明授权
    Catalytic etch with magnetic direction control 有权
    催化蚀刻磁方向控制

    公开(公告)号：US09105583B2

    公开(公告)日：2015-08-11

    申请号：US13735314

    申请日：2013-01-07

    Applicant: International Business Machines Corporation

    Inventor： Eric A. Joseph ,  David W. Abraham ,  Roger W. Cheek ,  Alejandro G. Schrott ,  Ying Zhang

    IPC: H01L21/31 ,  H01L21/308 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01L29/06 ,  H01L29/16

    CPC classification number: H01L21/3081 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/32134 ,  H01L21/32137 ,  H01L29/0657 ,  H01L29/16 ,  Y10T428/24479 ,  Y10T428/24612

    Abstract: A material can be locally etched with arbitrary changes in the direction of the etch. A ferromagnetic-material-including catalytic particle is employed to etch the material. A wet etch chemical or a plasma condition can be employed in conjunction with the ferromagnetic-material-including catalytic particle to etch a material through a catalytic reaction between the catalytic particle and the material. During a catalytic etch process, a magnetic field is applied to the ferromagnetic-material-including catalytic particle to direct the movement of the particle to any direction, which is chosen so as to form a contiguous cavity having at least two cavity portions having different directions. The direction of the magnetic field can be controlled so as to form the contiguous cavity in a preplanned pattern, and each segment of the contiguous cavity can extend along an arbitrary direction.

    Abstract translation: 可以在蚀刻方向上任意变化地局部蚀刻材料。 使用含铁磁材料的催化颗粒来蚀刻材料。 湿蚀刻化学品或等离子体条件可以与含铁磁材料的催化颗粒结合使用，以通过催化颗粒和材料之间的催化反应来蚀刻材料。 在催化蚀刻工艺期间，磁场被施加到包含铁磁材料的催化剂颗粒上以引导颗粒运动到任何方向，该方向被选择成形成具有至少两个具有不同方向的空腔部分的连续空腔 。 可以控制磁场的方向以便以预先设计的图案形成连续的空腔，并且连续空腔的每个区段可以沿任意方向延伸。

    CATALYTIC ETCH WITH MAGNETIC DIRECTION CONTROL
    64.
    发明申请
    CATALYTIC ETCH WITH MAGNETIC DIRECTION CONTROL 审中-公开
    具有磁方向控制的催化蚀刻

    公开(公告)号：US20150044426A1

    公开(公告)日：2015-02-12

    申请号：US14521948

    申请日：2014-10-23

    Applicant: International Business Machines Corporation

    Inventor： Eric A. Joseph ,  David W. Abraham ,  Roger W. Cheek ,  Alejandro G. Schrott ,  Ying Zhang

    IPC: H01L21/308 ,  H01L29/16 ,  H01L29/06

    CPC classification number: H01L21/3081 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/32134 ,  H01L21/32137 ,  H01L29/0657 ,  H01L29/16 ,  Y10T428/24479 ,  Y10T428/24612

    Abstract: A material can be locally etched with arbitrary changes in the direction of the etch. A ferromagnetic-material-including catalytic particle is employed to etch the material. A wet etch chemical or a plasma condition can be employed in conjunction with the ferromagnetic-material-including catalytic particle to etch a material through a catalytic reaction between the catalytic particle and the material. During a catalytic etch process, a magnetic field is applied to the ferromagnetic-material-including catalytic particle to direct the movement of the particle to any direction, which is chosen so as to form a contiguous cavity having at least two cavity portions having different directions. The direction of the magnetic field can be controlled so as to form the contiguous cavity in a preplanned pattern, and each segment of the contiguous cavity can extend along an arbitrary direction.

    Abstract translation: 可以在蚀刻方向上任意变化地局部蚀刻材料。 使用含铁磁材料的催化颗粒来蚀刻材料。 湿蚀刻化学品或等离子体条件可以与含铁磁材料的催化颗粒结合使用，以通过催化颗粒和材料之间的催化反应来蚀刻材料。 在催化蚀刻工艺期间，磁场被施加到包含铁磁材料的催化剂颗粒上以引导颗粒运动到任何方向，该方向被选择成形成具有至少两个具有不同方向的空腔部分的连续空腔 。 可以控制磁场的方向以便以预先设计的图案形成连续的空腔，并且连续空腔的每个区段可以沿任意方向延伸。

    High aspect ratio and reduced undercut trench etch process for a semiconductor substrate
    65.
    发明授权
    High aspect ratio and reduced undercut trench etch process for a semiconductor substrate 有权
    用于半导体衬底的高纵横比和减少的底切沟槽蚀刻工艺

    公开(公告)号：US08928124B2

    公开(公告)日：2015-01-06

    申请号：US13965511

    申请日：2013-08-13

    Applicant: International Business Machines Corporation ,  ZEON Corporation

    Inventor： Nicholas C. M. Fuller ,  Eric A. Joseph ,  Edmund M. Sikorski ,  Goh Matsuura

    IPC: H01L29/06 ,  H01L21/768 ,  H01L21/3065

    CPC classification number: H01L29/0657 ,  H01L21/30655 ,  H01L21/76898

    Abstract: A hydrofluorocarbon gas is employed as a polymer deposition gas in an anisotropic etch process employing an alternation of an etchant gas and the polymer deposition gas to etch a deep trench in a semiconductor substrate. The hydrofluorocarbon gas can generate a thick carbon-rich and hydrogen-containing polymer on sidewalls of a trench at a thickness on par with the thickness of the polymer on a top surface of the semiconductor substrate. The thick carbon-rich and hydrogen-containing polymer protects sidewalls of a trench, thereby minimizing an undercut below a hard mask without degradation of the overall rate. In some embodiments, an improvement in the overall etch rate can be achieved.

    Abstract translation: 在各向异性蚀刻工艺中使用氢氟烃气体作为聚合物沉积气体，其使用蚀刻剂气体和聚合物沉积气体的交替来蚀刻半导体衬底中的深沟槽。 氢氟烃气体可以在半导体衬底的顶表面上与聚合物的厚度一致的厚度在沟槽的侧壁上产生厚的富碳和含氢聚合物。 厚的富碳和含氢聚合物保护沟槽的侧壁，从而使硬掩模下方的底切最小化，而不降低整体速率。 在一些实施例中，可以实现整体蚀刻速率的改进。

    SMALL FOOTPRINT PHASE CHANGE MEMORY CELL
    67.
    发明申请
    SMALL FOOTPRINT PHASE CHANGE MEMORY CELL 有权
    小的相位变化记忆细胞

    公开(公告)号：US20140166967A1

    公开(公告)日：2014-06-19

    申请号：US14179707

    申请日：2014-02-13

    Applicant: Macronix International Co., Ltd. ,  International Business Machines Corporation

    Inventor： Matthew J. Breitwisch ,  Eric A. Joseph ,  Chung H. Lam ,  Hsiang-Lan Lung

    IPC: H01L45/00

    CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1675 ,  H01L45/1683 ,  H01L45/1691

    Abstract: An example embodiment disclosed is a phase change memory cell in a semiconductor wafer. The semiconductor wafer includes a first metalization layer (Metal 1). The phase change memory cell includes an insulating substrate defining a non-sublithographic via. The non-sublithographic via is located on the first metalization layer and includes a bottom and a sidewall. Intermediate insulating material is positioned below the insulating substrate. The intermediate insulating material defines a sublithographic aperture passing through the bottom of the non-sublithographic via. A bottom electrode is positioned within the sublithographic aperture, and is composed of conductive non-phase change material. The non-sublithographic via includes phase change material positioned within. The phase change material is electrically coupled to the bottom electrode. A liner is positioned along the sidewall of the non-sublithographic via. The liner is electrically coupled to the phase change material and is composed of the conductive non-phase change material.

    Abstract translation: 所公开的示例性实施例是半导体晶片中的相变存储单元。 半导体晶片包括第一金属化层（金属1）。 相变存储单元包括限定非亚光刻通孔的绝缘基板。 非亚光刻通孔位于第一金属化层上并且包括底部和侧壁。 中间绝缘材料位于绝缘基板的下方。 中间绝缘材料限定通过非亚光刻通孔底部的亚光刻孔。 底电极位于亚光刻孔内，由导电非相变材料构成。 非亚光刻通孔包括位于其内的相变材料。 相变材料电耦合到底部电极。 沿着非亚光刻通孔的侧壁定位衬垫。 衬套电耦合到相变材料，并由导电非相变材料组成。

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