公开(公告)号：US20070194411A1

公开(公告)日：2007-08-23

申请号：US10528069

申请日：2003-09-26

申请人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Kenichi Ishiguro ,  Sadao Nakashima

发明人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Kenichi Ishiguro ,  Sadao Nakashima

IPC分类号： H01L23/58

CPC分类号： H01L21/67306 ,  H01L21/67098 ,  H01L21/67309

摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.

摘要翻译： 热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置， 提供。 基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是 放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为 减少 支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

公开(公告)号：US20060265870A1

公开(公告)日：2006-11-30

申请号：US11442115

申请日：2006-05-30

申请人： Kiyozumi Gotou ,  Naoto Nakamura

发明人： Kiyozumi Gotou ,  Naoto Nakamura

IPC分类号： H05K3/20 ,  H05K1/16

CPC分类号： H05K1/0266 ,  H05K1/0269 ,  H05K3/28 ,  H05K3/303 ,  H05K2201/0969 ,  H05K2201/09781 ,  H05K2201/09918 ,  H05K2201/09936 ,  H05K2203/0588 ,  H05K2203/166 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49165

摘要： An alignment mark for aligning a resist film and a silk film relative to a printed circuit board is used as a reference mark based on which a position of an electronic component on the printed circuit board is acquired when a component mounting machine mounts the electronic component on the printed circuit board. This makes it unnecessary to additionally provide a board recognition mark and an individual recognition mark, thereby making it possible to effectively use an area of the printed circuit board. In addition, since the number of marks to be recognized is decreased, a recognition processing is reduced. Accordingly, mounting time and a mounting program can be reduced, and a manufacturing cost of the printed circuit board can be reduced.

摘要翻译： 用于将抗蚀剂膜和丝膜相对于印刷电路板对准的对准标记用作参考标记，当组件安装机将电子部件安装在基板上时，基准装置将电子部件在印刷电路板上的位置取得 印刷电路板。 这使得不需要另外提供板识别标记和单独的识别标记，从而可以有效地使用印刷电路板的区域。 此外，由于要识别的标记的数量减少，因此识别处理降低。 因此，可以减少安装时间和安装程序，并且可以降低印刷电路板的制造成本。

公开(公告)号：US20060016431A1

公开(公告)日：2006-01-26

申请号：US11185711

申请日：2005-07-21

申请人： Zenichiro Mashiki ,  Naoto Nakamura

发明人： Zenichiro Mashiki ,  Naoto Nakamura

IPC分类号： F02B7/00

CPC分类号： F02D41/3094 ,  F02D35/027 ,  F02D41/401 ,  F02D2041/281 ,  F02D2250/14 ,  F02P5/152 ,  Y02T10/44 ,  Y02T10/46

摘要： An engine ECU executes a program including the step of calculating an injection time Astart from the engine speed and load factor when arriving at the injection calculation timing of a cylinder located in the proximity of a knock sensor, the step of calculating an injection period TAU, the step of calculating an injection end time Aend, the step of shortening the injection time of an in-cylinder injector when the injection time Astart or injection end time Aend is within a KCS gate, and the step of calculating the port injection period so as to inject the insufficient injection quantity from an intake manifold injector when the required injection quantity will be insufficient as a result of shortening the injection period of the in-cylinder injector.

公开(公告)号：US5760538A

公开(公告)日：1998-06-02

申请号：US914618

申请日：1997-08-19

申请人： Hideaki Mitsutake ,  Shinichi Kawate ,  Naoto Nakamura ,  Yoshihisa Sano

发明人： Hideaki Mitsutake ,  Shinichi Kawate ,  Naoto Nakamura ,  Yoshihisa Sano

IPC分类号： H01J5/03 ,  H01J9/18 ,  H01J9/24 ,  H01J29/02 ,  H01J29/86 ,  H01J29/87 ,  H01J31/12 ,  H01J19/42

CPC分类号： H01J9/242 ,  H01J29/028 ,  H01J29/864 ,  H01J31/127 ,  H01J9/185 ,  H01J2201/3165 ,  H01J2329/864 ,  H01J2329/8645 ,  H01J2329/8655

摘要： An electron beam apparatus includes an electron source having an electron-emitting device, an electrode for controlling an electron beam emitted from the electron source, a target to be irradiated with an electron beam emitted from the electron source and a spacer arranged between the electron source and the electrode. The spacer has a semiconductor film on the surface thereof that is electrically connected to the electron source and the electrode.

摘要翻译： 电子束装置包括具有电子发射器件的电子源，用于控制从电子源发射的电子束的电极，用从电子源发射的电子束照射的靶和设置在电子源之间的间隔物 和电极。 间隔物在其表面上具有电连接到电子源和电极的半导体膜。