公开(公告)号：US06570744B1

公开(公告)日：2003-05-27

申请号：US09586560

申请日：2000-05-25

申请人： Junichi Fujikata ,  Masafumi Nakada

发明人： Junichi Fujikata ,  Masafumi Nakada

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302

摘要： A magnetic layer which is exchange-coupled to an antiferromagnetic layer and given an exchange bias therefrom is laminated via a non-magnetic layer on another magnetic layer to form an MR film. The antiferromagnetic layer (PtMn, PdMn or NiMn) is laminated on a ground layer(Zr, Hf, Zr—Hf, Zr—Co, Zr—Au, Ni—O, Co—O or Fe—O) so that the antiferromagnetic layer has a surface of an average roughness of 1-5 Å. A conduction layer is formed adjacent to the magnetic layer for sensing a magnetic field. The conduction layer is made of Cu, Ag, Au or an alloy composed of two selected therefrom. A layer made of Zr, Ta, Zr—O, Ta—O or a mixture thereof is laminated on the conduction layer. The MR film exhibits a large resistance variation linearly at near zero magnetic field with an excellent thermal stability.

摘要翻译： 与反铁磁层交换耦合并给予交换偏压的磁性层通过非磁性层层叠在另一磁性层上以形成MR膜。 将反铁磁层（PtMn，PdMn或NiMn）层叠在接地层（Zr，Hf，Zr-Hf，Zr-Co，Zr-Au，Ni-O，Co-O或Fe-O）上， 具有平均粗糙度为1-5的表面。 形成与磁性层相邻的感应磁场的导电层。 导电层由Cu，Ag，Au或由其中选择的两者组成的合金制成。 在导电层上层叠由Zr，Ta，Zr-O，Ta-O或其混合物制成的层。 MR膜在近零磁场下线性呈现出大的电阻变化，具有优异的热稳定性。

公开(公告)号：US5889640A

公开(公告)日：1999-03-30

申请号：US711909

申请日：1996-09-12

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Hidefumi Yamamoto ,  Kunihiko Ishihara ,  Masafumi Nakada

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Hidefumi Yamamoto ,  Kunihiko Ishihara ,  Masafumi Nakada

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  G11B5/3116 ,  G11B5/3932

摘要： A magnetoresistive element generally includes consecutively an antiferromagnetic layer, a first ferromagnetic layer, a non-mangetic layer, and a second ferromagnetic layer. Instead of the non-magnetic layer, the magnetoresistive element may include a combination of a Co layer, a non-magnetic layer, and a Co layer. The antiferromagnetic layer is made of nickel oxide, a mixture of nickel oxide and cobalt oxide, or a laminate of nickel oxide and cobalt oxide. The ferromagnetic layer has a thickness of 1 to 10 nm, and the element has a height of 0.1 to 1 um. The non-magnetic layer has a thickness of 2 to 3 nm, and the antiferromagnetic layer has a thickness of 5 to 30 nm. The magnetoresistive element has an appropriate cross point, outputs an excellent reproduced signal, and has a desirable half-width with respect to the output signal.

摘要翻译： 磁阻元件通常包括反铁磁层，第一铁磁层，非管状层和第二铁磁层。 代替非磁性层，磁阻元件可以包括Co层，非磁性层和Co层的组合。 反铁磁层由氧化镍，氧化镍和氧化钴的混合物，或氧化镍和氧化钴的叠层制成。 铁磁层的厚度为1〜10nm，元件的高度为0.1〜1μm。 非磁性层的厚度为2〜3nm，反铁磁层的厚度为5〜30nm。 磁阻元件具有适当的交叉点，输出优异的再现信号，并且相对于输出信号具有期望的半宽度。

公开(公告)号：US5594933A

公开(公告)日：1997-01-14

申请号：US497716

申请日：1995-06-30

申请人： Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Junichi Fujikata ,  Kunihiko Ishihara

发明人： Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Junichi Fujikata ,  Kunihiko Ishihara

IPC分类号： C22C5/00 ,  G11B5/39 ,  H01F10/00 ,  H01F10/16 ,  H01F41/32 ,  H01L43/10 ,  H01F10/12

CPC分类号： B82Y25/00 ,  G11B5/3903 ,  H01F10/007 ,  H01L43/10 ,  Y10S428/928 ,  Y10T428/1107 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12063 ,  Y10T428/12465

摘要： The invention relates to a magnetoresistance material, i.e. a conductive material that exhibits magnetoresistance, which is an inhomogeneous system consisting of a nonmagnetic matrix and ultrafine particles of a ferromagnetic material such as Co or Ni--Fe--Co dispersed in the nonmagnetic matrix. With the aim of reducing deterioration of the magnetoresistance effect, an alloy or mixture of at least two metal elements selected from Cu, Ag, Au and Pt is used as the material of the nonmagnetic matrix. Optionally, the nonmagnetic matrix may contain a limited quantity of a supplementary element selected from Al, Cr, In, Mn, Mo, Nb, Pd, Ta, Ti, W, V, Zr and Ir. A film of the magnetoresistance material can be formed on a substrate, and it is optional to interpose a buffer layer between the film and the substrate and/or cover the film with a protective layer.

摘要翻译： 本发明涉及一种磁阻材料，即具有磁阻的导电材料，其是由非磁性基体和分散在非磁性基质中的诸如Co或Ni-Fe-Co的铁磁材料的超微粒子组成的不均匀系统。 为了减少磁阻效应的劣化，使用选自Cu，Ag，Au和Pt中的至少两种金属元素的合金或混合物作为非磁性基体的材料。 可选地，非磁性矩阵可以包含有限量的选自Al，Cr，In，Mn，Mo，Nb，Pd，Ta，Ti，W，V，Zr和Ir的补充元素。 可以在衬底上形成磁阻材料的膜，并且可选地在膜和衬底之间设置缓冲层和/或用保护层覆盖膜。