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    Piezoelectric element, ink jet head and producing method for piezoelectric element
    62.
    发明授权
    Piezoelectric element, ink jet head and producing method for piezoelectric element 有权
    压电元件，喷墨头和压电元件的制造方法

    公开(公告)号：US07874649B2

    公开(公告)日：2011-01-25

    申请号：US11774145

    申请日：2007-07-06

    申请人： Takanori Matsuda ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

    发明人： Takanori Matsuda ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Katsumi Aoki

    IPC分类号： B41J2/045

    CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

    摘要： A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

    摘要翻译： 压电元件包括​​设置在基板上的压电膜和与压电膜接触设置并利用弯曲模式的一对电极。 该压电薄膜包括由四方晶体构成的并由具有与压电薄膜的膜表面平行的（100）面的晶体形成的a畴的a畴，a畴包括具有正常 基本上平行于压电薄膜的主弯曲方向的（001）面的轴线和与压电薄膜的主弯曲方向垂直的法线轴（001）面的B域，A畴具有 体积比例大于50体积％，相对于A结构域的体积和B结构域的体积的总和。

    Manufacturing method for piezoelectric body, piezoelectric element, and liquid discharge head
    63.
    发明授权
    Manufacturing method for piezoelectric body, piezoelectric element, and liquid discharge head 有权
    压电体，压电元件和排液头的制造方法

    公开(公告)号：US07874648B2

    公开(公告)日：2011-01-25

    申请号：US11773009

    申请日：2007-07-03

    申请人： Takanori Matsuda ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku

    发明人： Takanori Matsuda ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku

    IPC分类号： B41J2/045 ,  H04R17/00

    CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/314 ,  Y10T29/42

    摘要： A method of manufacturing a piezoelectric body, formed from a film made of an ABO3 perovskite oxide crystal epitaxially grown on a substrate, includes forming a film containing an AOx crystal by using an oxide containing an A element and a B element by heating the substrate to a temperature which is equal to or higher than a temperature at which the AOx crystal is formed, and which is lower than a temperature at which the ABO3 perovskite oxide crystal is formed and changing the film containing the AOx crystal into a film made of the ABO3 perovskite oxide crystal by heating the substrate to a temperature which exceeds a temperature at which the AOx crystal can be present, and which is equal to or higher than a temperature at which the ABO3 perovskite oxide crystal is formed.

    摘要翻译： 由在基板外延生长的由ABO 3钙钛矿型氧化物晶体构成的膜形成的压电体的制造方法包括通过使用含有A元素和B元素的氧化物将基板加热而形成含有AOx晶体的膜， 该温度等于或高于形成AOx晶体的温度，并且低于形成ABO 3钙钛矿氧化物晶体的温度，并将含有AOx晶体的膜改变为由ABO 3制成的膜 通过将基板加热到超过可能存在AO x的温度的温度，并且等于或高于形成ABO 3钙钛矿氧化物晶体的温度的钙钛矿氧化物晶体。

    WIRELESS TERMINAL MANAGEMENT APPARATUS, WIRELESS TERMINAL MANAGEMENT METHOD, WIRELESS TERMINAL MANAGEMENT PROGRAM, AND RECORDING MEDIUM
    64.
    发明申请
    WIRELESS TERMINAL MANAGEMENT APPARATUS, WIRELESS TERMINAL MANAGEMENT METHOD, WIRELESS TERMINAL MANAGEMENT PROGRAM, AND RECORDING MEDIUM 审中-公开
    无线终端管理装置，无线终端管理方法，无线终端管理程序和记录介质

    公开(公告)号：US20100279685A1

    公开(公告)日：2010-11-04

    申请号：US12746064

    申请日：2007-12-04

    申请人： Masaru Sasaki ,  Koichi Nagaki ,  Kenichi Takeda ,  Eiji Saito

    发明人： Masaru Sasaki ,  Koichi Nagaki ,  Kenichi Takeda ,  Eiji Saito

    IPC分类号： H04W60/00

    CPC分类号： H04W60/00 ,  H04W8/005 ,  H04W8/06 ,  H04W76/30

    摘要： A wireless terminal management apparatus includes a communication unit performing short-distance wireless communication with wireless terminals; a registering unit that registers information indicating a wireless terminal connectable to the communication unit; a determining unit that determines whether the number of registrations of information indicating a wireless terminal registered in the registering unit has reached a given number of wireless terminals allowed to connect to the communication unit; an updating unit that when a non-registered wireless terminal is nearby and if the number of registrations has reached the given number, updates the number of registrations such that information indicating the non-registered wireless terminal becomes registered; and a searching unit that searches for a wireless terminal nearby, where if a search result indicates no registered wireless terminals and a non-registered wireless terminal nearby, the updating unit updates to enable information indicating the non-registered wireless terminal to be registered by the registering unit.

    摘要翻译： 无线终端管理装置包括与无线终端进行短距离无线通信的通信单元; 注册单元，其注册指示可连接到所述通信单元的无线终端的信息; 确定单元，确定在注册单元中登记的指示无线终端的信息的登记数量是否已经达到允许连接到通信单元的给定数量的无线终端; 更新单元，当未注册的无线终端在附近并且注册的数量已经达到给定的数量时，更新注册的数量，使得指示未注册的无线终端的信息变为注册; 以及搜索单元，其搜索附近的无线终端，其中如果搜索结果指示没有注册的无线终端和附近的未注册的无线终端，则所述更新单元更新以使得能够由所述无注册无线终端注册的指示未注册的无线终端的信息 登记单位

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    66.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20090302993A1

    公开(公告)日：2009-12-10

    申请号：US12481384

    申请日：2009-06-09

    申请人： TSUYOSHI FUJIWARA ,  Toshinori Imai ,  Kenichi Takeda ,  Hiromi Shimamoto

    发明人： TSUYOSHI FUJIWARA ,  Toshinori Imai ,  Kenichi Takeda ,  Hiromi Shimamoto

    IPC分类号： H01C1/012

    CPC分类号： H01L23/5228 ,  H01L27/0688 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.

    摘要翻译： 根据本发明的半导体器件包括：形成在金属电阻器元件的下表面上的下表面的氧化防止绝缘膜; 形成在所述金属电阻元件的上表面上的上表面氧化防止绝缘膜; 以及侧面氧化防止绝缘膜，其仅在金属电阻元件的侧面附近形成，在与下表面的氧化防止绝缘膜分离的工序中沉积在晶片的整个表面上，进行各向异性蚀刻 表面氧化防止绝缘膜。 根据本发明，可以防止由于金属电阻元件的氧化引起的电阻值的增加，并且还可以防止金属布线层之间的寄生电容的增加，而不会使制造工艺复杂化。

    Polishing method
    67.
    发明授权
    Polishing method 有权
    抛光方法

    公开(公告)号：US07563716B2

    公开(公告)日：2009-07-21

    申请号：US11693383

    申请日：2007-03-29

    申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

    发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

    IPC分类号： H01L21/302

    CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

    摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

    摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。 在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

    PIEZOELECTRIC MATERIAL
    70.
    发明申请
    PIEZOELECTRIC MATERIAL 有权
    压电材料

    公开(公告)号：US20090026408A1

    公开(公告)日：2009-01-29

    申请号：US12135980

    申请日：2008-06-09

    申请人： Kaoru Miura ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo

    发明人： Kaoru Miura ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo

    IPC分类号： H01L41/187

    CPC分类号： H01L41/1871 ,  H01L41/43

    摘要： The present invention provides a piezoelectric material which can be applied even to the MEMS technique, exhibits satisfactory piezoelectricity even at high ambient temperatures and is environmentally clean, namely, a piezoelectric material including an oxide obtained by forming a solid solution composed of two perovskite oxides A(1)B(1)O3 and A(2)B(2)O3 different from each other in crystalline phase, the oxide being represented by the following general formula (1): X{A(1)B(1)O3}−(1−X){A(2)B(2)O3}  (1) wherein “A(1)” and “A(2)” are each an element including an alkali earth metal and may be the same or different from each other; “B(1)” and “B(2)” each include two or more metal elements, and either one of “B(1)” and “B(2)” contains Cu in a content of 3 atm % or more; and “X” satisfies the relation 0

    摘要翻译： 本发明提供一种甚至可以应用于MEMS技术的压电材料，即使在高环境温度下也表现出令人满意的压电性，并且是环境清洁的，即包括通过形成由两种钙钛矿氧化物A形成的固溶体获得的氧化物的压电材料 （1）在结晶相中彼此不同的B（1）O 3和A（2）B（2）O 3，所述氧化物由以下通式（1）表示：<？in-line-formula description =“In （1）B（1）O3} - （1-X）{A（2）B（2）O3}（1）<？在线公式 description =“In-line Formulas”end =“tail”？>其中“A（1）”和“A（2）”分别是包含碱土金属的元素，可以相同或不同; “B（1）”和“B（2）”各自包含两个或更多个金属元素，“B（1）”和“B（2）”中的任一个含有3atm％以上的Cu; 和“X”满足0