摘要:
An alternative to traditional basketball that enables the audience to enjoy faster action than provided by traditional basketball, and which challenges especially gifted players with a more demanding and rigorous game. The game court is nearly twice as large as a traditional NBA playing court and the hoop is smaller and higher than a standard hoop and is played without a backboard. New rules are provided playing and for scoring wherein there are three point areas under and away from the hoop. The number, positions of the players, and mode of play are different, including the use of a protected goalie with the freedom to move without dribbling the ball, a running substitution box, and rules wherein the location of the ball, not the player, determines if play is live or dead.
摘要:
A restaurant system includes an electronic kiosk having opposed first and second sides. A first display is situated on the first side for use by the customer and a second display is situated on the second side for use by a bartender. One aspect of the restaurant system includes a mobile kiosk system that includes a rail having distal and proximate ends and extends therebetween. The electronic kiosk includes a base that extends adjacent the rail. Inductive or conductive electrical components transmit an electrical current to power a processor, input device, and output device of the kiosk. The base is movable only along the rail between the rail distal and proximate ends.
摘要:
A mat having a resiliently deformable mat portion and a securing element provided thereon for securing an item attached thereto against movement and relative to the mat portion is provided. The mat is arranged to grip a support surface on which the mat portion is laid, in use, by formation of at least a partial vacuum between the mat portion and the support surface upon deformation of the mat portion. The mat comprises a projection arranged to urge the item away from the mat when held by the mat, thereby to create a deformation in the mat portion.
摘要:
A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.
摘要:
A restaurant system includes a lighted pour spout for use in dispensing liquid from a bottle. The pour spout includes a coupling portion for attachment to a bottle and an interior portion that extends into the bottle. The interior portion may include a light and a battery for illuminating the pour spout and bottle. The restaurant system includes an electronic kiosk having a first display for use by a customer and a second display for use by a bartender or waiter. The kiosk includes a first input device for use by the customer. A processor is in data communication with the displays and the first input device to retrieve data from the first input device, such as a drink order, and actuate the displays. Drink recipes may be displayed on the second display to aid a bartender in mixing drinks.
摘要:
Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.