公开(公告)号：US06872989B2

公开(公告)日：2005-03-29

申请号：US10370766

申请日：2003-02-24

申请人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

发明人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/77 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/092 ,  H01L27/115 ,  H01L27/12 ,  H01L29/10 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L31/0312

CPC分类号： H01L29/802 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1222 ,  H01L28/55 ,  H01L29/1054 ,  H01L29/783 ,  H01L29/78687

摘要： A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

摘要翻译： 在Si衬底101上依次沉积氧化硅膜102，Pt膜103x，Ti膜104x和PZT膜105x。将Si衬底101放置在室106中，以便将PZT膜105x照射 EHF波108.用EHF波的照射局部加热诸如PZT膜的电介质膜。 结果，可以改善例如电介质膜的泄漏特性，而不会对形成在Si衬底101上的器件产生不利影响。

公开(公告)号：US06852602B2

公开(公告)日：2005-02-08

申请号：US10298000

申请日：2002-01-30

申请人： Yoshihiko Kanzawa ,  Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Yoshihiro Hara ,  Takeshi Takagi ,  Takahiro Kawashima

发明人： Yoshihiko Kanzawa ,  Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Yoshihiro Hara ,  Takeshi Takagi ,  Takahiro Kawashima

IPC分类号： H01L21/205 ,  H01L29/15 ,  H01L29/24 ,  H01L29/737 ,  H01L29/80 ,  H01L21/331

CPC分类号： H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/155 ,  H01L29/1608 ,  H01L29/7378 ,  H01L29/802

摘要： A multi-layer film 10 is formed by stacking a Si1-x1-y1Gex1Cy1 layer (0≦x1 y2) having a high Ge mole fraction, e.g., a Si0.2Ge0.8 layer 12. In this manner, the range in which the multi-layer film serves as a SiGeC layer with C atoms incorporated into lattice sites extends to high degrees in which a Ge mole fraction is high.

摘要翻译： 通过层叠具有小Ge摩尔分数的Si1-x1-y1Gex1Cy1层（0 <= x1 <1和0 y2），例如Si0.2Ge0.8层 以这种方式，多层膜用作结合到晶格点中的C原子的SiGeC层的范围延伸到Ge摩尔分数高的高度。

公开(公告)号：US06815735B2

公开(公告)日：2004-11-09

申请号：US10311267

申请日：2002-12-13

申请人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

发明人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

IPC分类号： H01L310328

CPC分类号： H01L29/78696 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/783 ,  H01L29/78606 ,  H01L29/78687 ,  H01L29/802

摘要： A semiconductor layer 30 of a graded SiGe-HDTMOS is constructed of an upper Si film 12, an Si buffer layer 13, an Si1−xGex film 14 and an Si cap layer 15. The region between a source region 20a and drain region 20b of the semiconductor layer 30 includes a high concentration n-type Si body region 22 and an n Si region 23, an Si cap region 25 and an SiGe channel region 24. A Ge composition ratio x of the Si1−xGex film 14 is made to increase from the Si buffer layer 13 to the Si cap layer 15. For the p-type HDTMOS, the electron current component of the substrate current decreases.

摘要翻译： 梯度SiGe-HDTMOS的半导体层30由上部Si膜12，Si缓冲层13，Si1-xGex膜14和Si覆盖层15构成。源区域20a和漏极区域20b之间的区域 半导体层30包括高浓度n型Si体区域22和n Si区域23，Si帽区域25和SiGe沟道区域24.使Si1-xGex膜14的Ge组成比x增加 从Si缓冲层13到Si覆盖层15.对于p型HDTMOS，衬底电流的电子电流分量降低。

公开(公告)号：US06554501B2

公开(公告)日：2003-04-29

申请号：US09811569

申请日：2001-03-20

申请人： Akira Kosaka ,  Junichi Tanii ,  Shigeru Wada ,  Yoshihiro Hara

发明人： Akira Kosaka ,  Junichi Tanii ,  Shigeru Wada ,  Yoshihiro Hara

IPC分类号： G03B908

CPC分类号： G03B9/08

摘要： A control device for control an actuator comprises a ‘shape-memory alloy that recovers to prescribed memory dimensions’ and ‘a force application means that applies an external force to the shape-memory alloy and changes its dimensions’ has a pre-heating means that, prior to the control of a driven member by the actuator, pre-heats the shape-memory alloy to a temperature at which the shape-memory alloy begins to change its shape or to a slightly lower temperature relative thereto.

摘要翻译： 用于控制致动器的控制装置包括“恢复到规定的存储器尺寸的形状记忆合金”和“向形状记忆合金施加外力并改变其尺寸的力施加装置”具有预热装置， 在通过致动器控制从动构件之前，将形状记忆合金预加热到形状记忆合金开始改变其形状或相对于其略微降低的温度的温度。

公开(公告)号：US06455364B1

公开(公告)日：2002-09-24

申请号：US09526686

申请日：2000-03-15

申请人： Akira Asai ,  Teruhito Oonishi ,  Takeshi Takagi ,  Tohru Saitoh ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Yo Ichikawa

发明人： Akira Asai ,  Teruhito Oonishi ,  Takeshi Takagi ,  Tohru Saitoh ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Yo Ichikawa

IPC分类号： H01L218249

CPC分类号： H01L29/66242 ,  H01L21/763 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/7378

摘要： In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.

摘要翻译： 在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极层。 通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电极开口的范围覆盖集电极层和器件隔离的一部分。 在位于集电体开口内部的半导体基板的一部分上形成作为外部基底的第二导电类型的半导体层，同时在半导体衬底中形成与外部基底相同的导电类型的防漏层。 因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。

公开(公告)号：US06434932B2

公开(公告)日：2002-08-20

申请号：US09814068

申请日：2001-03-22

申请人： Yoshihiro Hara ,  Junichi Tanii ,  Shigeru Wada ,  Akira Kosaka

发明人： Yoshihiro Hara ,  Junichi Tanii ,  Shigeru Wada ,  Akira Kosaka

IPC分类号： F01B2910

CPC分类号： F03G7/065 ,  G05B2219/41342

摘要： A controller in which an actuator has a shape memory alloy (SMA), for controlling a position of a member driven by the actuator. The controller includes the SMA, a spring coil connected to the SMA, an operation device for calculating a voltage to be supplied to the SMA on the basis of information upon a target position and an actual position of the member, a voltage supplying device for supplying the voltage to the shape memory alloy on a basis of a result of operation performed by the operation device, only when the member is moved in a direction in which the SMA returns to a predetermined length that is memorized by itself.

摘要翻译： 一种控制器，其中致动器具有形状记忆合金（SMA），用于控制由致动器驱动的构件的位置。 控制器包括SMA，连接到SMA的弹簧线圈，用于基于目标位置和构件的实际位置的信息计算要供给到SMA的电压的操作装置，用于供应的电压供应装置 基于由操作装置执行的操作结果的形状记忆合金的电压，仅当该部件沿着SMA返回到其自身记忆的预定长度的方向移动时。

公开(公告)号：US06407771B1

公开(公告)日：2002-06-18

申请号：US08512646

申请日：1995-08-08

申请人： Tetsuro Kanbara ,  Yoshihiro Hara ,  Keiji Tamai ,  Kohtaro Hayashi

发明人： Tetsuro Kanbara ,  Yoshihiro Hara ,  Keiji Tamai ,  Kohtaro Hayashi

IPC分类号： H04N5228

CPC分类号： H04N5/23254 ,  H04N5/23248 ,  H04N5/23287

摘要： A camera having an image shift detecting function is provided with an optical system which forms a subject image, an image sensing device which converts light of the subject image into an electric signal, an image shift detecting sensor which detects a relative shift between the camera and the subject image based on an output of the image sensing device and a microcomputer which compensates for the relative shift between the camera and the subject image based on an image shift amount detected by the image shift detecting sensor. The microcomputer specifies an area of the image sensing device based on a direction of luminance variation of the subject image and the image shift detection is made by using only an output corresponding to the specified area.

摘要翻译： 具有图像偏移检测功能的相机设置有形成被摄体图像的光学系统，将被摄体图像的光转换为电信号的图像感测装置，检测相机与摄像机之间的相对偏移的图像偏移检测传感器 基于图像感测装置的输出的被摄体图像和基于由图像偏移检测传感器检测到的图像偏移量来补偿相机和被摄体图像之间的相对偏移的微计算机。 微型计算机基于被摄体图像的亮度变化的方向来指定图像感测装置的区域，并且仅使用与指定区域相对应的输出进行图像偏移检测。

公开(公告)号：US6167201A

公开(公告)日：2000-12-26

申请号：US903309

申请日：1997-07-30

申请人： Yoshihiro Hara ,  Kenji Ishibashi ,  Kimiharu Akahoshi ,  Norihiko Akamatsu

发明人： Yoshihiro Hara ,  Kenji Ishibashi ,  Kimiharu Akahoshi ,  Norihiko Akamatsu

IPC分类号： G02B7/10 ,  G03B17/00

CPC分类号： G02B7/102

摘要： A camera is provided with a varifocal lens including a zoom lens system driven by a motor and by a zoom lens drive control section and a focusing lens system driven by a motor and by a focusing lens drive control section for performing focusing before the zoom lens system is driven or while the zoom lens system is being driven. The camera is also provided with a lens switch sensor for determining whether an operation member for starting an exposure operation has been operated and a body control section and a lens control section for halting the driving of the zoom lens system when it is determined that the operation member has been operated by the sensor to re-start the driving of the focusing lens system.

摘要翻译： 相机设置有变焦透镜，该变焦透镜包括由电动机驱动的变焦透镜系统和变焦透镜驱动控制部以及由电动机驱动的聚焦透镜系统以及用于在变焦透镜系统之前进行聚焦的聚焦透镜驱动控制部 被驱动或当变焦镜头系统被驱动时。 相机还设置有用于确定用于开始曝光操作的操作构件是否已被操作的镜头开关传感器，以及当确定操作的情况下用于停止变焦镜头系统的驱动的身体控制部分和镜头控制部分 传感器已经操作构件以重新开始聚焦透镜系统的驱动。

公开(公告)号：US5957070A

公开(公告)日：1999-09-28

申请号：US84398

申请日：1998-05-27

申请人： Shinji Yoshida ,  Kazushi Inoue ,  Yoshihiro Hara ,  Minoru Yamaguchi

发明人： Shinji Yoshida ,  Kazushi Inoue ,  Yoshihiro Hara ,  Minoru Yamaguchi

IPC分类号： D05B19/02 ,  D05B19/08 ,  D05B19/12

CPC分类号： D05B19/08 ,  D05B19/085

摘要： A programmable electronic sewing machine includes sewing means for executing a sewing operation according to a predetermined program, program composing means for composing the program, displaying means for displaying a plurality of icons representative of commands used in composition of the program respectively, and input means for entering data used in composition of the program and for selecting a desired one of the icons displayed by the displaying means.

摘要翻译： 一种可编程电子缝纫机，包括用于根据预定程序执行缝纫操作的缝合装置，用于组成该程序的程序组合装置，分别显示代表该程序的组合中使用的命令的多个图标的显示装置，以及用于 输入用于组合程序的数据，并用于选择由显示装置显示的期望的一个图标。

公开(公告)号：US5950551A

公开(公告)日：1999-09-14

申请号：US85564

申请日：1998-05-27

申请人： Shinji Yoshida ,  Kazushi Inoue ,  Yoshihiro Hara ,  Minoru Yamaguchi

发明人： Shinji Yoshida ,  Kazushi Inoue ,  Yoshihiro Hara ,  Minoru Yamaguchi

IPC分类号： D05B19/02 ,  D05B19/08 ,  D05B21/00 ,  D05C5/06

CPC分类号： D05B19/08

摘要： Disclosed is a sewing machine system, including an electronically controlled sewing machine, and a data editing device. In a sewing machine, a plurality of sewing programs stored in a data recording medium are read, and image data indicative of a sewing pattern corresponding to each sewing program is generated. The image data is then transmitted to the data editing device. In the data editing device, a plurality of sewing patterns are displayed in accordance with the received image data. When one of the displayed sewing patterns is selected by an operator, a predetermined operation is applied to a sewing program corresponding to the selected sewing pattern.

摘要翻译： 公开了一种缝纫机系统，包括电子控制缝纫机和数据编辑装置。 在缝纫机中，读取存储在数据记录介质中的多个缝制程序，并且生成表示与各缝制程序对应的缝制图案的图像数据。 然后将图像数据发送到数据编辑装置。 在数据编辑装置中，根据接收到的图像数据显示多个缝制图案。 当由操作者选择显示的缝合图案之一时，对与所选择的缝合图案相对应的缝制程序应用预定的操作。