公开(公告)号：US11385618B2

公开(公告)日：2022-07-12

申请号：US16997717

申请日：2020-08-19

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Shruthi Kumara Vadivel ,  Deepti Verma ,  Anshika Sharma ,  Lavanya Sriram ,  Trupti D. Gawai

IPC: G05B19/418 ,  G05B19/4093

Abstract: Methods, devices, and systems related to process control in manufacturing are described. In an example, a method can include receiving data from a first process control device affixed to a first manufacturing tool of a first type, identifying one or more attributes of the data via a second processing resource of a second process control device affixed to a second manufacturing tool of a second type different from the first type, determining one or more settings for the second manufacturing tool via the second processing resource in response to identifying the one or more attributes of the data, and sending a command including the one or more settings to the second manufacturing tool from the second process control device.

公开(公告)号：US20220187773A1

公开(公告)日：2022-06-16

申请号：US17120391

申请日：2020-12-14

Applicant: Micron Technology, Inc.

Inventor： Kathryn H. Russo ,  Fatma Arzum Simsek-Ege ,  Yixin Yan ,  Gitanjali T. Ghosh ,  Libo Wang

IPC: G05B13/02 ,  G08C17/02 ,  G05B13/04 ,  H02J3/38 ,  H02J13/00

Abstract: Methods, devices, and systems related to managing energy using artificial intelligence (AI) are described. In an example, a method can include receiving first signaling including data representing an energy input at a processing resource of a computing device from a radio in communication with a processing resource of an energy source, receiving second signaling including user data at the processing resource of the computing device from a memory of the computing device, inputting the user data and the data representing the energy input into an AI model at the processing resource of the computing device, generating data representing a command as an output of the AI model, and transmitting third signaling including the data representing the command to the processing resource of the energy source from the processing resource of the computing device via the radio in communication with the processing resource of the energy source.

公开(公告)号：US20220165398A1

公开(公告)日：2022-05-26

申请号：US17102818

申请日：2020-11-24

Applicant: Micron Technology, Inc.

Inventor： Rosa M. Avila-Hernandez ,  Fatma Arzum Simsek-Ege ,  Kathryn H. Russo ,  Yixin Yan

IPC: G16H40/20 ,  G16H40/67 ,  G16H10/60 ,  G16H50/20 ,  G16H70/20 ,  A61B5/00

Abstract: Methods, apparatuses, and non-transitory machine-readable media associated with treatment plan identification are described. Treatment plan identification can include receiving first signaling from a radio in communication with a second processing resource configured to monitor health data of a patient, receiving at the first processing resource second signaling from a radio in communication with a second processing resource configured to monitor data associated with a plurality of health care providers, writing from the first processing resource to a memory resource data that is based at least in part on a combination of the first and the second signaling, identifying output data representative of a health treatment plan for the patient based at least in part on input data representative of written information and generic health information, and transmitting the output data representative of the health treatment plan.

公开(公告)号：US20220057777A1

公开(公告)日：2022-02-24

申请号：US16997717

申请日：2020-08-19

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Shruthi Kumara Vadivel ,  Deepti Verma ,  Anshika Sharma ,  Lavanya Sriram ,  Trupti D. Gawai

IPC: G05B19/4093

Abstract: Methods, devices, and systems related to process control in manufacturing are described. In an example, a method can include receiving data from a first process control device affixed to a first manufacturing tool of a first type, identifying one or more attributes of the data via a second processing resource of a second process control device affixed to a second manufacturing tool of a second type different from the first type, determining one or more settings for the second manufacturing tool via the second processing resource in response to identifying the one or more attributes of the data, and sending a command including the one or more settings to the second manufacturing tool from the second process control device.

公开(公告)号：US11222975B2

公开(公告)日：2022-01-11

申请号：US16522390

申请日：2019-07-25

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Steve V. Cole ,  Scott J. Derner ,  Toby D. Robbs

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/108 ,  H01L27/11587 ,  G11C11/22 ,  G11C11/4091

Abstract: An apparatus, such as a memory array, can have a memory cell coupled to a first digit line (e.g., a local digit line) at a first level. A second digit line (e.g., hierarchical digit line) at a second level can be coupled to a main sense amplifier. A charge sharing device at a third level between the first and second levels can be coupled to the first digit line and to a connector. A vertical transistor at the third level can be coupled between the first digit line and the connector. A contact can be coupled between the connector and the second digit line.

公开(公告)号：US11195560B2

公开(公告)日：2021-12-07

申请号：US16709030

申请日：2019-12-10

Applicant: Micron Technology, Inc.

Inventor： Naveen Kaushik ,  Fatma Arzum Simsek-Ege ,  Deepak Chandra Pandey

IPC: G11C5/06 ,  H01L27/108

Abstract: Some embodiments include an integrated assembly having a memory array, and having digit lines extending along a first direction through the memory array. Insulative spacers are along sidewalls of the digit lines. The insulative spacers extend continuously along the digit lines through the memory array. Conductive regions are laterally spaced from the digit lines by intervening regions. The conductive regions are configured as segments spaced apart from one another along the first direction. The intervening regions include regions of the insulative spacers and include void regions adjacent the regions of the insulative spacers. The void regions are configured as void-region-segments which are spaced apart from one another along the first direction by insulative structures. Storage-elements are associated with the conductive regions. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20210183866A1

公开(公告)日：2021-06-17

申请号：US16713913

申请日：2019-12-13

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Clement Jacob

IPC: H01L27/108

Abstract: An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate. The first source/drain region and the second source/drain region are separated by the channel. The example apparatus further includes a gate separated from the channel by a dielectric material and an access line formed in a high aspect ratio trench connected to the gate. The access line includes a first titanium nitride (TiN) material formed in the trench, a metal material formed over the first TiN material, and a second TiN material formed over the metal material. The example apparatus further includes a sense line coupled to the first source/drain region and a storage node coupled to the second source/drain region.

公开(公告)号：US20210035979A1

公开(公告)日：2021-02-04

申请号：US17065711

申请日：2020-10-08

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Kamal M. Karda ,  Haitao Liu

IPC: H01L27/108 ,  H01L21/285 ,  H01L21/28

Abstract: An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate. The first source/drain region and the second source/drain region are separated by a channel. The apparatus includes a gate opposing the channel. The gate includes noble metal nanoparticles. A sense line is coupled to the first source/drain region and a storage node is coupled to the second source/drain region.

公开(公告)号：US10818666B2

公开(公告)日：2020-10-27

申请号：US16291597

申请日：2019-03-04

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Kamal M. Karda ,  Haitao Liu

IPC: H01L21/02 ,  H01L27/108 ,  H01L21/285 ,  H01L21/28

Abstract: An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate. The first source/drain region and the second source/drain region are separated by a channel. The apparatus includes a gate opposing the channel. The gate includes noble metal nanoparticles. A sense line is coupled to the first source/drain region and a storage node is coupled to the second source/drain region.

公开(公告)号：US10529776B2

公开(公告)日：2020-01-07

申请号：US16253111

申请日：2019-01-21

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Krishna K. Parat

IPC: H01L27/24 ,  H01L45/00 ,  H01L27/11553 ,  H01L29/792 ,  H01L29/788 ,  H01L29/66 ,  H01L27/1158

Abstract: Various embodiments comprise apparatuses and methods, such as a memory stack having a continuous cell pillar. In various embodiments, the apparatus includes a source material, a buffer material, a select gate drain (SGD), and a memory stack arranged between the source material and the SGD. The memory stack comprises alternating levels of conductor materials and dielectric materials. A continuous channel-fill material forms a cell pillar that is continuous from the source material to at least a level corresponding to the SGD.