公开(公告)号：US20210343732A1

公开(公告)日：2021-11-04

申请号：US17377665

申请日：2021-07-16

Applicant: Micron Technology, Inc.

Inventor： Clement Jacob ,  Vassil N. Antonov ,  Jaydeb Goswami ,  Albert Liao ,  Christopher W. Petz ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L27/11507 ,  H01L21/02 ,  H01L49/02

Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sig, and Nb, Other aspects, including method, are disclosed.

公开(公告)号：US20210175072A1

公开(公告)日：2021-06-10

申请号：US16708141

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Clement Jacob ,  Richard L. Elliott ,  Christopher W. Petz

IPC: H01L21/02 ,  H01L21/285 ,  H01J37/34

Abstract: A material deposition system comprises a dopant source containing at least one dopant precursor material, an inert gas source containing at least one noble gas, and a physical vapor deposition apparatus in selective fluid communication with the dopant source and the inert gas source. The physical vapor deposition apparatus comprises a housing structure, a target electrode, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one dopant precursor material and the at least one noble gas. The target electrode is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure and is spaced apart from the target electrode. A method of forming a microelectronic device, a microelectronic device, a memory device, and an electronic system are also described.

公开(公告)号：US20240153541A1

公开(公告)日：2024-05-09

申请号：US18413671

申请日：2024-01-16

Applicant: Micron Technology, Inc.

Inventor： Che-Chi Lee ,  Terrence B. McDaniel ,  Kehao Zhang ,  Albert P. Chan ,  Clement Jacob ,  Luca Fumagalli ,  Vinay Nair

IPC: G11C5/10 ,  G11C11/405 ,  H01L27/06 ,  H10B12/00

CPC classification number: G11C5/10 ,  G11C11/405 ,  H01L27/0688 ,  H01L28/60 ,  H10B12/30

Abstract: Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US11915777B2

公开(公告)日：2024-02-27

申请号：US17669189

申请日：2022-02-10

Applicant: Micron Technology, Inc.

Inventor： Che-Chi Lee ,  Terrence B. McDaniel ,  Kehao Zhang ,  Albert P. Chan ,  Clement Jacob ,  Luca Fumagalli ,  Vinay Nair

IPC: G11C11/24 ,  G11C5/10 ,  H01L49/02 ,  G11C11/405 ,  H01L27/06 ,  H10B12/00

CPC classification number: G11C5/10 ,  G11C11/405 ,  H01L27/0688 ,  H01L28/60 ,  H10B12/30

Abstract: Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20220358971A1

公开(公告)日：2022-11-10

申请号：US17669189

申请日：2022-02-10

Applicant: Micron Technology, Inc.

Inventor： Che-Chi Lee ,  Terrence B. McDaniel ,  Kehao Zhang ,  Albert P. Chan ,  Clement Jacob ,  Luca Fumagalli ,  Vinay Nair

IPC: G11C5/10 ,  H01L27/108 ,  H01L49/02 ,  G11C11/405 ,  H01L27/06

Abstract: Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US11101274B2

公开(公告)日：2021-08-24

申请号：US16704657

申请日：2019-12-05

Applicant: Micron Technology, Inc.

Inventor： Clement Jacob ,  Vassil N. Antonov ,  Jaydeb Goswami ,  Albert Liao ,  Christopher W. Petz ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L21/00 ,  H01L27/11507 ,  H01L21/02 ,  H01L49/02

Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir. Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sn, and Nb. Other aspects, including method, are disclosed.

公开(公告)号：US11690216B2

公开(公告)日：2023-06-27

申请号：US16713913

申请日：2019-12-13

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Clement Jacob

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L23/528 ,  H01L23/532 ,  H10B12/00

CPC classification number: H10B12/34 ,  H10B12/053 ,  H10B12/488 ,  H10B12/31

Abstract: An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate. The first source/drain region and the second source/drain region are separated by the channel. The example apparatus further includes a gate separated from the channel by a dielectric material and an access line formed in a high aspect ratio trench connected to the gate. The access line includes a first titanium nitride (TiN) material formed in the trench, a metal material formed over the first TiN material, and a second TiN material formed over the metal material. The example apparatus further includes a sense line coupled to the first source/drain region and a storage node coupled to the second source/drain region.

公开(公告)号：US20210183866A1

公开(公告)日：2021-06-17

申请号：US16713913

申请日：2019-12-13

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Clement Jacob

IPC: H01L27/108

Abstract: An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate. The first source/drain region and the second source/drain region are separated by the channel. The example apparatus further includes a gate separated from the channel by a dielectric material and an access line formed in a high aspect ratio trench connected to the gate. The access line includes a first titanium nitride (TiN) material formed in the trench, a metal material formed over the first TiN material, and a second TiN material formed over the metal material. The example apparatus further includes a sense line coupled to the first source/drain region and a storage node coupled to the second source/drain region.

公开(公告)号：US11825662B2

公开(公告)日：2023-11-21

申请号：US17377665

申请日：2021-07-16

Applicant: Micron Technology, Inc.

Inventor： Clement Jacob ,  Vassil N. Antonov ,  Jaydeb Goswami ,  Albert Liao ,  Christopher W. Petz ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L21/00 ,  H10B53/30 ,  H01L21/02 ,  H01L49/02

CPC classification number: H10B53/30 ,  H01L21/02175 ,  H01L21/02244 ,  H01L28/60

Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sig, and Nb, Other aspects, including method, are disclosed.

公开(公告)号：US11515147B2

公开(公告)日：2022-11-29

申请号：US16708141

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Clement Jacob ,  Richard L. Elliott ,  Christopher W. Petz

IPC: H01L21/02 ,  H01L21/285 ,  H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/35 ,  C23C14/00

Abstract: A material deposition system comprises a dopant source containing at least one dopant precursor material, an inert gas source containing at least one noble gas, and a physical vapor deposition apparatus in selective fluid communication with the dopant source and the inert gas source. The physical vapor deposition apparatus comprises a housing structure, a target electrode, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one dopant precursor material and the at least one noble gas. The target electrode is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure and is spaced apart from the target electrode. A method of forming a microelectronic device, a microelectronic device, a memory device, and an electronic system are also described.