公开(公告)号：US20090033377A1

公开(公告)日：2009-02-05

申请号：US12170472

申请日：2008-07-10

申请人： Takayuki Hashimoto ,  Takashi Hirao ,  Masaki Shiraishi

发明人： Takayuki Hashimoto ,  Takashi Hirao ,  Masaki Shiraishi

IPC分类号： H03K3/012

CPC分类号： H02M3/07 ,  H02M1/08 ,  H02M7/5387 ,  H02M2003/071

摘要： A drive circuit for driving a semiconductor element is equipped with: a first switch connected to a positive side of a DC power supply; a second switch connected to the other terminal of the first switch and to a negative side of the DC power supply; a third switch connected to the positive side of the DC power supply; a fourth switch connected to the other terminal of the third switch; a fifth switch connected to the other terminal of the fourth switch and to the negative side of the DC power supply; and a capacitor connected to the other terminal of the first switch and to the other terminal of the fourth switch. A gate of the semiconductor element is connected to the other terminal of said third switch; and a source of the semiconductor element is connected to the negative side of the DC power supply.

摘要翻译： 用于驱动半导体元件的驱动电路配备有：连接到直流电源的正侧的第一开关; 连接到第一开关的另一个端子和直流电源的负极的第二开关; 连接到直流电源的正极的第三开关; 连接到第三开关的另一个端子的第四开关; 连接到第四开关的另一个端子和直流电源的负极的第五开关; 以及电容器，连接到第一开关的另一端子和第四开关的另一端子。 半导体元件的栅极连接到所述第三开关的另一个端子; 并且半导体元件的源极连接到直流电源的负极侧。

公开(公告)号：US07402391B2

公开(公告)日：2008-07-22

申请号：US11581872

申请日：2006-10-17

申请人： Takashi Hirao ,  Masayuki Hiramoto

发明人： Takashi Hirao ,  Masayuki Hiramoto

IPC分类号： C12Q1/68 ,  C12P19/34

CPC分类号： C12Q1/6895

摘要： A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3′ end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3′ end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus.The method for detecting species in a target plant genus, particularly an allergenic plant genus such as the genus Fagopyrum, can make it possible to detect with high sensitivity, for example, about 1 ppm of the plant(s) in cases where the plant(s) is contained in a food ingredient or food product.

摘要翻译： 一种用于检测目标植物属物种的方法，包括以下步骤：使用选自引物（A）和（B）中的至少一种成员进行PCR，其可在严格条件下与具有共同的核酸分子杂交 在45S rRNA前体基因序列中的目标植物属中的所有物种的核苷酸序列，其中引物（A）的3'末端可以在引物与核酸杂交时与靶植物属的ITS-1序列中的碱基互补结合 酸分子，而当引物与核酸分子杂交时，引物（B）的3'末端可以与靶植物属的ITS-2序列中的碱基互补结合，并且从PCR中鉴定所得扩增产物的存在， 目标植物属的ITS-1或ITS-2序列的至少一部分。 用于检测目标植物属，特别是变应原植物属（如禾本科）的物种的方法可以使得可以以高灵敏度检测例如约1ppm的植物（例如植物（ s）包含在食品成分或食品中。

公开(公告)号：US20080064028A1

公开(公告)日：2008-03-13

申请号：US10556903

申请日：2004-05-14

申请人： Takashi Hirao ,  Masayuki Hiramoto ,  Satoshi Watanabe ,  Jinji Shono

发明人： Takashi Hirao ,  Masayuki Hiramoto ,  Satoshi Watanabe ,  Jinji Shono

IPC分类号： C12Q1/68 ,  C07H21/04

CPC分类号： C12Q1/6895 ,  C12Q1/686 ,  C12Q2561/113

摘要： Provided is a method of quantifying a specific plant genus in a food or a food ingredient by a PCR method, comprising: (i) preparing a sample for correction where a sample derived from the specific plant genus to be detected and a standard plant sample are mixed in a predetermined ratio, and extracting genomic DNA from the sample for correction; (ii) preparing a test sample where a known amount of the standard plant sample is added to the food or the food ingredient to be examined, and extracting genomic DNA from the test sample; (iii) practicing a quantitative PCR method using the genomic DNAs and primers; and (iv) conducting correction with a standard value for correction determined for the sample for correction to calculate the amount of the specific plant ingredient contained in the test sample.

摘要翻译： 本发明提供了一种通过PCR方法对食品或食品成分中的特定植物属进行定量的方法，其特征在于，包括：（i）制备用于校正的样品，其中来源于要检测的特定植物属的样品和标准植物样品为 以预定比例混合，并从样品中提取基因组DNA进行校正; （ii）制备测试样品，其中将已知量的标准植物样品加入到待检查的食品或食品成分中，并从测试样品中提取基因组DNA; （iii）使用基因组DNA和引物进行定量PCR方法; 和（iv）进行用于校正的样品的校正标准值的校正，以计算测试样品中包含的特定植物成分的量。

公开(公告)号：US20070187760A1

公开(公告)日：2007-08-16

申请号：US11701343

申请日：2007-02-01

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

摘要翻译： 薄膜晶体管包括基板和形成在基板上并在其间形成间隙的一对源/漏电极（即源电极和漏电极）。 提供一对低电阻导电薄膜，使得每个涂覆源极/漏极之一的至少一部分。 低电阻导电薄膜在它们之间限定了间隙。 在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层，并且沿着限定在低电阻导电薄膜之间的间隙延伸以作为沟道起作用。 氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

公开(公告)号：US06207282B1

公开(公告)日：2001-03-27

申请号：US08996762

申请日：1997-12-22

申请人： Masahiro Deguchi ,  Akihisa Yoshida ,  Makoto Kitabatake ,  Takashi Hirao

发明人： Masahiro Deguchi ,  Akihisa Yoshida ,  Makoto Kitabatake ,  Takashi Hirao

IPC分类号： B32B900

CPC分类号： C30B33/00 ,  C30B29/04 ,  H01J2237/0812 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.

摘要翻译： 包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。 通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。 具有一定能量的簇粒子被照射到金刚石的表面上。 辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。 因此，金刚石的表面被有效地平滑和蚀刻。

公开(公告)号：US5684574A

公开(公告)日：1997-11-04

申请号：US550853

申请日：1995-10-31

申请人： Akira Shiokawa ,  Hideaki Yasui ,  Koichi Kotera ,  Yuuji Mukai ,  Hiroyoshi Tanaka ,  Takashi Hirao

发明人： Akira Shiokawa ,  Hideaki Yasui ,  Koichi Kotera ,  Yuuji Mukai ,  Hiroyoshi Tanaka ,  Takashi Hirao

IPC分类号： C23C14/54 ,  G01N21/31 ,  G01B11/06

CPC分类号： G01N21/314 ,  C23C14/544

摘要： A beam emitted from a light source including the characteristic wavelength of flown particles in a film forming system is interrupted by a beam chopper in a predetermined cycle, and is then divided into a probing beam and a reference beam by a beam divider. The probing beam passes through a particle flight area and is then injected into a photo detector through an optical filter, and a probing signal is outputted. A reference signal is obtained from the reference beam in the same manner. A data processor detects the phase and level of both signals, so that an absorbance, i.e., a film forming rate for the flown particles is estimated. The film forming rate is integrated with time so that a film thickness is estimated. Thus, the range of the applicable film forming rate is wide. In addition, it is possible to perform continuous monitoring with high precision also in an atmosphere where a large amount of light having the same wavelength as the characteristic wavelength of the flown particles is generated, as in sputtering systems.

摘要翻译： 从包含成膜系统中的流动粒子的特征波长的光源发射的光束以预定的周期由光束斩波器中断，然后由分束器分割成探测光束和参考光束。 探测光束通过粒子飞行区域，然后通过滤光片注入光电检测器，并输出探测信号。 以相同的方式从参考光束获得参考信号。 数据处理器检测两个信号的相位和电平，从而估计用于飞行粒子的吸光度，即成膜速率。 成膜速度与时间相结合，从而估计膜厚度。 因此，适用的成膜速率的范围很宽。 此外，如在溅射系统中那样，在具有与流动粒子的特征波长相同波长的大量的光的气氛中也可以高精度地进行连续监视。

公开(公告)号：US5328855A

公开(公告)日：1994-07-12

申请号：US918961

申请日：1992-07-24

申请人： Makoto Kitabatake ,  Masahiro Deguchi ,  Takashi Hirao

发明人： Makoto Kitabatake ,  Masahiro Deguchi ,  Takashi Hirao

IPC分类号： H01L21/04 ,  H01L21/265 ,  H01L21/268

CPC分类号： H01L21/268 ,  H01L21/0415

摘要： Semiconductor diamond is formed by a process comprising irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm.sup.2, annihilating defects in the diamond crystals, and cleaning the surface of the diamond crystals.

摘要翻译： 通过包括用具有大于0.1W / cm 2的照射密度的光照射金刚石晶体，消除金刚石晶体中的缺陷并清洁金刚石晶体的表面的方法形成半导体金刚石。

公开(公告)号：US4143388A

公开(公告)日：1979-03-06

申请号：US797835

申请日：1977-05-17

申请人： Hideya Esaki ,  Takashi Hirao ,  Hakuhei Kawakami

发明人： Hideya Esaki ,  Takashi Hirao ,  Hakuhei Kawakami

IPC分类号： H01L29/73 ,  H01L21/266 ,  H01L21/331 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L21/266 ,  H01L29/1045 ,  H01L29/42376 ,  H01L29/78

摘要： A MOS type semiconductor device, wherein at least one oblique face is provided on at least a part of a gate electrode which is provided on a principal face of said substrate with a gate insulation film inbetween, and at a specific depth from the oblique face, that is, in parallel with this oblique face, an ion-implanted layer is provided in a manner to obliquely cross the surface of said substrate. In this MOS type semiconductor device the channel is made immediately underneath the surface of the substrate and in the ion-implanted layer, and therefore the channel length is determined by the thickness of the ion-implanted layer. By controlling the thickness of the ion-implanted layer, a short channel length, which is required for improving the operating speed and/or the handling current capability of MOS type semiconductor devices, is obtainable.