公开(公告)号：US20060027845A1

公开(公告)日：2006-02-09

申请号：US11242094

申请日：2005-10-03

申请人： Peter Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

发明人： Peter Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

IPC分类号： H01L31/113

CPC分类号： H01L27/11526 ,  H01L27/115 ,  H01L27/11531 ,  H01L27/14603 ,  H01L27/14609

摘要： The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.

摘要翻译： 成像单元的积分周期或成像单元暴露于光能的时间通过利用单聚电子可编程只读存储器（EPROM）结构捕获光能而大大增加。 光能从EPROM结构的沟道区形成光电子。 光生成的电子然后被加速成具有电离碰撞，其进而导致电子以与通道区域捕获的光子数成正比的速率注入到EPROM结构的浮动栅极上。

公开(公告)号：US06639784B1

公开(公告)日：2003-10-28

申请号：US10283810

申请日：2002-10-30

申请人： Peter Hopper ,  Philipp Lindorfer ,  Kyuwoon Hwang ,  Andy Strachan ,  Vladislav Vashchenko

发明人： Peter Hopper ,  Philipp Lindorfer ,  Kyuwoon Hwang ,  Andy Strachan ,  Vladislav Vashchenko

IPC分类号： H01J4228

CPC分类号： H01L28/91 ,  H01L27/0805

摘要： A capacitor structure is formed in a wedge-shaped trench by forming alternating layers of insulating material and conductive material in the trench such that each layer of conductive material formed in the trench is electrically isolated from adjacent layers of conductive material formed in the trench. A first electrical contact is formed to electrically link in parallel a first set of alternating layers of conductive material. A second electrical contact is formed to electrically link in parallel a second set of alternating layers of conductive material. The two electrically isolated sets of inter-linked layers of conductive material define the interdigitated capacitor structure.

摘要翻译： 电容器结构通过在沟槽中形成绝缘材料和导电材料的交替层而形成在楔形沟槽中，使得形成在沟槽中的每个导电材料层与在沟槽中形成的导电材料的相邻层电隔离。 形成第一电接触以平行地电连接导电材料的第一组交替层。 形成第二电接触以平行地电连接第二组交替的导电材料层。 导电材料的两个电隔离的相互连接的层限定了交叉指向的电容器结构。

公开(公告)号：US20070066002A1

公开(公告)日：2007-03-22

申请号：US11601485

申请日：2006-11-17

申请人： Peter Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Yuri Mirgorodski

发明人： Peter Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Yuri Mirgorodski

IPC分类号： H01L21/8238

CPC分类号： H01L21/823814 ,  H01L29/1083 ,  H01L29/66659 ,  H01L29/78

摘要： An implant is added at the interface between the source region of an MOS transistor and the well material to improve dynamic IR drop performance. The additional implant raises the underlying capacitance of the source region. This, in turn, provides for an increase in charge storage which, in turn, provides for an improved level of protection against dynamic IR drop.

摘要翻译： 在MOS晶体管的源极区域和阱材料之间的界面处添加植入物，以改善动态IR滴落性能。 额外的植入物提高了源区域的底层电容。 这又反过来提供了电荷存储的增加，这进而提供了防止动态IR降低的改进的防护等级。

公开(公告)号：US07595243B1

公开(公告)日：2009-09-29

申请号：US11495225

申请日：2006-07-28

申请人： Constantin Bulucea ,  Philipp Lindorfer

发明人： Constantin Bulucea ,  Philipp Lindorfer

IPC分类号： H01L21/8236

CPC分类号： H01L21/823807 ,  H01L21/26586 ,  H01L27/0883 ,  H01L27/0928 ,  H01L29/1041 ,  H01L29/105 ,  H01L29/665 ,  H01L29/7833

摘要： A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor (“IGFET”) (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction IGFET is normally fabricated to be of materially greater gate dielectric thickness than the surface-channel IGFET so as to operate across a greater voltage range than the surface-channel IGFET. A p-channel surface-channel IGFET (102 or 162), which is typically fabricated to be of approximately the same gate-dielectric thickness as the n-channel surface-channel IGFET, is preferably combined with the two n-channel IGFETs to produce a complementary-IGFET structure. A further p-channel IGFET (106, 180, 184, or 192), which is typically fabricated to be of approximately the same gate dielectric thickness as the n-channel channel-junction IGFET, is also preferably included. The further p-channel IGFET can be a surface-channel or channel-junction device.

摘要翻译： 半导体技术结合了正常n沟道沟道结绝缘栅场效应晶体管（“IGFET”）（104）和n沟道表面沟道IGFET（100或160），以降低低频1 / f 噪声。 沟道结IGFET通常被制造为具有比表面沟道IGFET大得多的栅介质厚度，以便在比表面沟道IGFET更大的电压范围内工作。 典型地制造为与n沟道表面沟道IGFET大致相同的栅介质厚度的p沟道表面沟道IGFET（102或162）优选地与两个n沟道IGFET组合以产生 互补IGFET结构。 还优选包括通常被制造为具有与n沟道沟道结IGFET大致相同的栅介质厚度的另外的p沟道IGFET（106,180,184或192）。 另外的p沟道IGFET可以是表面沟道或沟道结器件。

公开(公告)号：US20060266925A1

公开(公告)日：2006-11-30

申请号：US11496951

申请日：2006-08-01

申请人： Peter Hopper ,  Philipp Lindorfer ,  Mark Poulter ,  Yuri Mirgorodski

发明人： Peter Hopper ,  Philipp Lindorfer ,  Mark Poulter ,  Yuri Mirgorodski

IPC分类号： H01L27/00

CPC分类号： H01L27/14609 ,  H04N5/35572 ,  H04N5/361 ,  H04N5/37452

摘要： An active pixel sensor cell including at least one photodiode and reset circuitry and an integrating varactor coupled to the photodiode, a method for reading out such a cell, and an image sensor including an array of such cells. The photodiode can be exposed to photons during an exposure interval to accumulate a sequence of subexposure charges at a first node of the photodiode. Each of the subexposure charges accumulates at the first node during a different subexposure interval of the exposure interval. The photodiode is reset during each of a sequence of reset intervals, each reset interval occurring before a different one of the subexposure intervals. An output signal indicative of an exposure charge accumulated at the storage node during the exposure interval can be asserted from the cell, where the exposure charge is indicative of a sum of all the subexposure charges.

公开(公告)号：US06720592B1

公开(公告)日：2004-04-13

申请号：US09895803

申请日：2001-06-29

申请人： Willem Johannes Kindt ,  Philipp Lindorfer

发明人： Willem Johannes Kindt ,  Philipp Lindorfer

IPC分类号： H01L27148

CPC分类号： H01L27/14601

摘要： The present invention is directed to a photogate based pixel cell with an electronic shutter and which provides relatively low lag and high sensitivity for sensing infrared light reflected from objects. Additionally, this invention eliminates the need for a transfer gate in the pixel cell. In one embodiment, the reset and shutter transistors are implemented with PMOS transistors so that the pixel cell can have an increased dynamic range and a relatively high voltage swing. In another embodiment, the actual size of each pixel cell can be further reduced when the reset gate and the electronic shutter are implemented with NMOS transistors. Also, when a P− well is not disposed beneath the photogate, the ability of the pixel cell to sense infrared light is improved. Correlated double sampling can be used to improve the accuracy of the signal read out from the pixel cell.

摘要翻译： 本发明涉及一种具有电子快门的基于光栅的像素单元，其提供用于感测从物体反射的红外光的相对较低的滞后和高灵敏度。 另外，本发明消除了对像素单元中的传输门的需要。 在一个实施例中，复位和快门晶体管由PMOS晶体管实现，使得像素单元可以具有增加的动态范围和相对高的电压摆幅。 在另一个实施例中，当复位门和电子快门用NMOS晶体管实现时，可以进一步减小每个像素单元的实际尺寸。 此外，当P-阱不设置在光栅下方时，像素单元感测红外光的能力得到改善。 可以使用相关的双重采样来提高从像素单元读出的信号的精度。

公开(公告)号：US06534759B1

公开(公告)日：2003-03-18

申请号：US09950121

申请日：2001-09-10

申请人： Waclaw C. Koscielniak ,  Philipp Lindorfer

发明人： Waclaw C. Koscielniak ,  Philipp Lindorfer

IPC分类号： H01L3100

CPC分类号： H01L27/14645 ,  H01L31/101 ,  H01L31/103 ,  H01L31/18

摘要： A vertical photodetector for detecting different wavelengths of light. The structure provides doped regions, which are separated by barrier regions. The doped regions detect photons corresponding to different wavelengths of light. Specifically, by detecting the amount of electrical charge collected by diodes positioned in the different doped regions, different wavelengths of light can be detected. The barrier regions inhibit the flow of electrical charges from one doped region into another doped region. The area of the doped regions can be increased, without increasing the capacitance of the diodes which are used to detect the electrical charges generated by light incident of the vertical photodetector.

摘要翻译： 用于检测不同波长的光的垂直光电探测器。 该结构提供掺杂区域，其被屏障区域分隔开。 掺杂区域检测对应于不同波长的光的光子。 具体地，通过检测位于不同掺杂区域中的二极管收集的电荷量，可以检测不同波长的光。 阻挡区域阻止电荷从一个掺杂区域流入另一个掺杂区域。 可以增加掺杂区域的面积，而不增加用于检测由垂直光电检测器入射的光产生的电荷的二极管的电容。

公开(公告)号：US07176530B1

公开(公告)日：2007-02-13

申请号：US10803203

申请日：2004-03-17

申请人： Constantin Bulucea ,  Philipp Lindorfer

发明人： Constantin Bulucea ,  Philipp Lindorfer

IPC分类号： H01L29/76

CPC分类号： H01L21/823807 ,  H01L21/26586 ,  H01L27/0883 ,  H01L27/0928 ,  H01L29/1041 ,  H01L29/105 ,  H01L29/665 ,  H01L29/7833

摘要： A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor (“IGFET”) (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction IGFET is normally of materially greater gate dielectric thickness than the surface-channel IGFET so as to operate across a greater voltage range than the surface-channel IGFET. Alternatively or additionally, the channel-junction IGFET may conduct current through a field-induced surface channel. A p-channel surface-channel IGFET (102 or 162), which is typically of approximately the same gate-dielectric thickness as the n-channel surface-channel IGFET, is preferably combined with the two n-channel IGFETs to produce a complementary-IGFET structure. A further p-channel IGFET (106, 180, 184, or 192), which is typically of approximately the same gate dielectric thickness as the n-channel channel-junction IGFET, is also preferably included. The further p-channel IGFET can be a surface-channel or channel-junction device.

摘要翻译： 半导体技术结合了正常n沟道沟道结绝缘栅场效应晶体管（“IGFET”）（104）和n沟道表面沟道IGFET（100或160），以降低低频1 / f 噪声。 沟道结IGFET通常具有比表面沟道IGFET大得多的栅介质厚度，以便在比表面沟道IGFET更大的电压范围内工作。 或者或另外，通道结IGFET可以传导电流通过场诱导的表面通道。 通常与n沟道表面沟道IGFET大致相同的栅介质厚度的p沟道表面沟道IGFET（102或162）优选与两个n沟道IGFET组合， IGFET结构。 还优选包括通常具有与n沟道沟道结IGFET大致相同的栅介质厚度的另外的p沟道IGFET（106,180,184或192）。 另外的p沟道IGFET可以是表面沟道或沟道结器件。