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    Fan-out semiconductor package and method of manufacturing the same
    61.
    发明授权
    Fan-out semiconductor package and method of manufacturing the same 有权

    公开(公告)号：US10262949B2

    公开(公告)日：2019-04-16

    申请号：US15944321

    申请日：2018-04-03

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Dae Hyun Park ,  Han Kim ,  Kang Heon Hur ,  Young Gwan Ko ,  Jung Ho Shim

    IPC: H05K7/00 ,  H01L23/538 ,  H01L25/10 ,  H01L21/48 ,  H01L25/00 ,  H01L21/683 ,  H01L23/48 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01L21/56 ,  H01L23/31

    Abstract: The present disclosure relates to a fan-out semiconductor package and a method of manufacturing the same. The fan-out semiconductor package includes: a first connection member having a through-hole; a semiconductor chip disposed in the through-hole; an encapsulant encapsulating at least portions of the first connection member and the semiconductor chip; and a second connection member disposed on the first connection member and the semiconductor chip. The first connection member includes a first insulating layer, a first redistribution layer and a second redistribution layer disposed on one surface and the other surface of the first insulating layer opposing the one surface thereof, respectively, a second insulating layer disposed on the first insulating layer and covering the first redistribution layer, and a third redistribution layer disposed on the second insulating layer. A fan-out semiconductor package may include one or more connection units instead of the first connection member.

    Fan-out semiconductor package module
    62.
    发明授权
    Fan-out semiconductor package module 有权

    公开(公告)号：US10192831B1

    公开(公告)日：2019-01-29

    申请号：US15933909

    申请日：2018-03-23

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Hyung Joon Kim ,  Han Kim

    IPC: H01L23/552 ,  H01L23/538 ,  H01L23/31 ,  H01L23/367 ,  H01L23/00

    Abstract: A fan-out semiconductor package module includes: a core member having first and second through-holes spaced apart from each other and one or more slits; a semiconductor chip disposed in the first through-hole; one or more first passive components disposed in the second through-hole; an encapsulant encapsulating at least portions of each of the core member, an inactive surface of the semiconductor chip, and the one or more first passive components; a connection member disposed on the core member, an active surface of the semiconductor chip, and the one or more first passive components and including redistribution layers electrically connected to the connection pads and the one or more first passive component; and first metal layers filling the one or more slits. At least one of the one or more slits is formed between the first and second through-holes.

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