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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    61.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20160359048A1

    公开(公告)日：2016-12-08

    申请号：US15240332

    申请日：2016-08-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kosei NODA ,  Noriyoshi SUZUKI

    IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423

    CPC classification number: H01L29/7869 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/42384 ,  H01L29/66969

    Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.

    Abstract translation: 通过在包括氧化物半导体膜的晶体管中抑制铟扩散到与氧化物半导体膜接触的绝缘膜中，提高了具有稳定电特性的高度可靠的半导体器件，并且改善了氧化物半导体膜与氧化物半导体膜之间的界面的特性 绝缘膜。 在含有铟的氧化物半导体膜中，表面的铟浓度降低，从而防止铟在氧化物半导体膜上与绝缘膜的扩散接触。 通过降低氧化物半导体膜表面的铟浓度，可以在表面形成实质上不含有铟的层。 通过使用该层作为绝缘膜的一部分，改善了与氧化物半导体膜接触的氧化物半导体膜与绝缘膜之间的界面的特性。

    SEMICONDUCTOR DEVICE
    63.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150279668A1

    公开(公告)日：2015-10-01

    申请号：US14678119

    申请日：2015-04-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

    IPC: H01L21/02 ,  H01L29/66

    CPC classification number: H01L21/02554 ,  H01L21/02488 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

    Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

    Abstract translation: 使用含有硅氧化物自由基的绝缘层作为与用于形成沟道的氧化物半导体层接触的绝缘层。 氧从绝缘层释放，由此可以减少氧化物半导体层中的氧缺乏和绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造可靠性高，电特性变化小的半导体装置。

    SEMICONDUCTOR DEVICE
    64.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150255617A1

    公开(公告)日：2015-09-10

    申请号：US14721510

    申请日：2015-05-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tadashi NAKANO ,  Mai SUGIKAWA ,  Kosei NODA

    IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423

    CPC classification number: H01L29/7869 ,  H01L29/0684 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78606

    Abstract: A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.

    Abstract translation: 提供了一种其金属氧化物中的氧空位减小的具有稳定的电特性的半导体器件。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的第一金属氧化物膜，与第一金属氧化物膜接触的源电极和漏极，以及钝化膜 在源电极和漏电极上。 第一绝缘膜，第二金属氧化物膜和第二绝缘膜依次层叠在钝化膜中。

    TRANSISTOR AND DISPLAY DEVICE USING THE SAME
    65.
    发明申请
    TRANSISTOR AND DISPLAY DEVICE USING THE SAME 审中-公开
    使用相同的晶体管和显示器件

    公开(公告)号：US20150123123A1

    公开(公告)日：2015-05-07

    申请号：US14588657

    申请日：2015-01-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masashi TSUBUKU ,  Kosei NODA

    IPC: H01L29/786 ,  H01L27/12

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/156

    Abstract: The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.

    Abstract translation: 频带尾部状态和带隙中的缺陷尽可能地减小，由此减小了在带隙附近或小于或等于带隙的能量的光吸收。 在这种情况下，不是仅通过优化氧化物半导体膜的制造条件，而是通过使氧化物半导体成为本质上的本征半导体，或者非常接近本征半导体，减少照射光的作用的缺陷和光照射 基本上减少了。 也就是说，即使在以1×1013个光子/ cm 2·sec传递波长为350nm的光的情况下，也可以使用氧化物半导体形成晶体管的沟道区域，其中， 阈值电压的变化小于或等于0.65 V.

    SEMICONDUCTOR DEVICE
    66.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20140252347A1

    公开(公告)日：2014-09-11

    申请号：US14281031

    申请日：2014-05-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78606

    Abstract: Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide semiconductor layer has capacitance of lower than or equal to 2×10−4 F/m2. For example, in the case of a top-gate transistor, a base insulating layer has capacitance of lower than or equal to 2×10−4 F/m2, whereby the adverse effect of an interface state between the substrate and the base insulating layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.

    Abstract translation: 公开了具有使用氧化物半导体的晶体管的半导体器件。 氧化物半导体层的背面通道侧的绝缘层的电容为2×10 -4 F / m 2以下。 例如，在顶栅晶体管的情况下，基极绝缘层具有小于或等于2×10 -4 F / m 2的电容，由此衬底和基极绝缘层之间的界面态的不利影响 可以减少 因此，可以制造电特性波动小，可靠性高的半导体装置。

    SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING OXIDE FILM
    68.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING OXIDE FILM 有权
    半导体器件，制造半导体器件的方法和形成氧化膜的方法

    公开(公告)号：US20130228775A1

    公开(公告)日：2013-09-05

    申请号：US13777074

    申请日：2013-02-26

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Kosei NODA ,  Suzunosuke HIRAISHI

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78696

    Abstract: One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×1016 spins/cm3 and a carrier density lower than 1×1015/cm3. The spin density is calculated from a peak of a signal detected at a g value (g) of around 1.93 by electron spin resonance spectroscopy. The oxide semiconductor film is formed by a sputtering method while bias power is supplied to the substrate side and self-bias voltage is controlled, and then subjected to heat treatment.

    Abstract translation: 本发明的一个实施例是至少包括氧化物半导体膜，与氧化物半导体膜接触的栅极绝缘膜和与氧化物半导体膜重叠的栅电极的半导体器件，其间具有栅极绝缘膜。 氧化物半导体膜的自旋密度低于9.3×1016自旋/ cm3，载流子密度低于1×1015 / cm3。 通过电子自旋共振光谱法从在g值约为1.93的g值（g）检测的信号的峰值计算自旋密度。 通过溅射法形成氧化物半导体膜，同时向衬底侧供给偏压功率并控制自偏压，然后进行热处理。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    69.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20130119377A1

    公开(公告)日：2013-05-16

    申请号：US13668454

    申请日：2012-11-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kosei NODA ,  Yuta Endo

    IPC: H01L29/786 ,  H01L21/42

    CPC classification number: H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78636 ,  H01L29/7869

    Abstract: By reducing the contact resistance between an oxide semiconductor film and a metal film, a transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device includes a pair of electrodes over an insulating surface; an oxide semiconductor film in contact with the pair of electrodes; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween. In the semiconductor device, the pair of electrodes contains a halogen element in a region in contact with the oxide semiconductor film. Further, plasma treatment in an atmosphere containing fluorine can be performed so that the pair of electrodes contains the halogen element in a region in contact with the oxide semiconductor film.

    Abstract translation: 通过降低氧化物半导体膜和金属膜之间的接触电阻，提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 半导体器件包括绝缘表面上的一对电极; 与所述一对电极接触的氧化物半导体膜; 氧化物半导体膜上的栅极绝缘膜; 以及与氧化物半导体膜重叠的栅电极，其间具有栅极绝缘膜。 在半导体器件中，该对电极在与氧化物半导体膜接触的区域中含有卤素元素。 此外，可以在含氟气氛中进行等离子体处理，使得该对电极在与氧化物半导体膜接触的区域中含有卤素元素。

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