Abstract:
An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.
Abstract:
There is provided an exposure condition setting method concerning an example of the present invention, the method includes inputting design layout data, extracting a plurality of design patterns having a predetermined dimension from the input design layout data, obtaining a transfer pattern transferred to a transfer target film by exposure of a mask pattern from the mask pattern associated with the extracted patterns, and calculating a dimensional fluctuation amount of the transfer pattern and a design value of the design pattern, obtaining a distribution of the number of the extracted design patterns associated with the dimensional fluctuation amount of the extracted design pattern, and setting exposure conditions in such a manner that the dimensional fluctuation amount of the extracted design pattern associated with a reference value in the distribution of the number of design patterns satisfies allowance conditions.
Abstract:
A plasma etching method for performing an etching process for forming on an insulating film formed on a substrate a hole shape having a ratio of depth to opening width of more than 20. The hole shape is formed on the insulating film by converting processing gas containing at least C4F6 gas and C6F6 gas into a plasma. A flow rate ratio of the C4F6 gas to the C6F6 gas (C4F6 gas flow rate/C6F6 gas flow rate) ranges from 2 to 11.
Abstract translation:一种等离子体蚀刻方法,用于在形成在基板上的绝缘膜上形成具有深度与开口宽度的比率大于20的孔形状的蚀刻工艺。通过转换处理气体而形成在孔绝缘膜上的孔形状, 将最少的C4F6气体和C6F6气体进入等离子体。 C4F6气体与C6F6气体的流量比(C 4 F 6气体流量/ C 6 F 6气体流量)为2〜11。
Abstract:
A processing unit carries out a predetermined data processing on the data in a storage unit. The storage unit is connected to the processing unit with a plurality of connecting lines. A voltage generating unit is connected to each of the connecting lines via a corresponding termination resistor and that generates a termination voltage to be applied to the connecting lines. An interrupting unit is connected between the connecting lines and the termination resistors, and it applies or does not apply the termination voltage to the connecting lines depending on a data processing state of the processing unit.
Abstract:
A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.
Abstract:
In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.
Abstract:
An aluminum piping material for an automobile heat exchanger, containing 0.05 to 0.4 mass % of Si, 0.05 to 0.4 mass % of Fe, 0.6 mass % or lower of Cu. 0.15 to 1.5 mass % of Mn, 0.05 to 0.3 mass % of Ti, and 0.05 to 0.3 mass % of V, with the balance being Al and inevitable impurities, wherein the aluminum piping material is excellent in corrosion resistance.
Abstract:
In conventional polar-loop transmitter circuits, using two feedback circuits intended to control the amplitude in an open loop and phase of a power output in closed loop, respectively, during transmission, causes current consumption to increase during delivery of a small power output. Therefore, a complex table has to be prepared in order to correct the nonlinearities in the amplitude-to-amplitude characteristic of the power amplifier and the amplitude-to-phase characteristic thereof. In order to reduce the current consumption required for the delivery of a moderate or small power output, a polar-loop transmitter circuit in which two feedback circuits intended to control the amplitude and phase of the power output respectively are active when the power amplifier delivers a large power output exhibiting strong nonlinearity, and when the power amplifier delivers a moderate or small power output, the amplitude of the power output is controlled in the open loop.
Abstract:
A pattern correction method executed by a computer includes a first correction and a second correction. The first correction is executed by calculating a correction value, in consideration for an optical proximity effect, for edges (first edges) meeting a condition among the edges constituting a designed pattern. Subsequently, The second correction is executed for an edge (second edge) which does not meet the condition, by use of the correction value of any one of the edges (first edges) adjacent to the second edge among the first edges for which the first correction is executed, thus connecting the corrected first edge and the corrected second edge by a line segment. The pattern is corrected to a shape suitable for a mask drawing and a check with simple processing.