公开(公告)号：US08674371B2

公开(公告)日：2014-03-18

申请号：US13706589

申请日：2012-12-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L27/14

CPC classification number: H01L29/7869 ,  H01L27/0266 ,  H01L27/1225 ,  H01L27/124

Abstract: The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.

Abstract translation: 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 第一布线层和第二布线层，其在栅极绝缘膜上方并且其端部与栅电极重叠; 以及氧化物半导体层，其在所述栅电极的上方并与所述栅极绝缘膜和所述第一布线层和所述第二布线层的端部接触。 非线性元件的栅电极和扫描线或信号线包括在布线中，非线性元件的第一或第二布线层直接连接到布线，以施加栅极的电位 电极。

公开(公告)号：US08552434B2

公开(公告)日：2013-10-08

申请号：US13680345

申请日：2012-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki ,  Hideaki Kuwabara

IPC: H01L27/14 ,  H01L21/00

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

Abstract translation: 在使用氧化物半导体作为有源层的薄膜晶体管中，为了防止用作有源层的氧化物半导体区域的组成，膜质量，界面等的变化，并且为了稳定化 薄膜晶体管的电气特性。 在其中使用第一氧化物半导体区域作为有源层的薄膜晶体管中，在第一氧化物半导体区域和用于薄的第一氧化物半导体区域的保护绝缘层之间形成具有比第一氧化物半导体区域低导电性的第二氧化物半导体区域 由此第二氧化物半导体区域用作第一氧化物半导体区域的保护层; 因此，可以防止第一氧化物半导体区域的组成变化或膜质量的劣化，并且能够稳定薄膜晶体管的电特性。

公开(公告)号：US08546182B2

公开(公告)日：2013-10-01

申请号：US13680349

申请日：2012-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki ,  Hideaki Kuwabara

IPC: H01L21/00 ,  H01L21/16

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

公开(公告)号：US20130244375A1

公开(公告)日：2013-09-19

申请号：US13888492

申请日：2013-05-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

Inventor： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L29/78621 ,  H01L29/7869

Abstract: An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Abstract translation: 一个实施例是包括交错（顶栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 层。 有意地提供具有比半导体层更高的载流子浓度的金属氧化物层作为源极和漏极电极层与半导体层之间的缓冲层，从而形成欧姆接触。

公开(公告)号：US12250855B2

公开(公告)日：2025-03-11

申请号：US17488376

申请日：2021-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L29/786 ,  H01L27/12 ,  H10K59/121 ,  H10K59/131 ,  H10K50/82

Abstract: A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

公开(公告)号：US12183832B2

公开(公告)日：2024-12-31

申请号：US17521021

申请日：2021-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US11935965B2

公开(公告)日：2024-03-19

申请号：US18136963

申请日：2023-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Kengo Akimoto ,  Masashi Tsubuku ,  Toshinari Sasaki

IPC: H01L29/786 ,  G09G3/36 ,  H01L27/12

CPC classification number: H01L29/78693 ,  G09G3/3648 ,  H01L27/1225 ,  H01L29/78618 ,  G09G2300/0842

Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

公开(公告)号：US11923206B2

公开(公告)日：2024-03-05

申请号：US17989861

申请日：2022-11-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US11922549B2

公开(公告)日：2024-03-05

申请号：US17626310

申请日：2020-07-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junpei Momo ,  Takahiro Fukutome

IPC: G06F17/00 ,  G06F40/40 ,  G06T7/73 ,  G06T11/20 ,  G06T11/60

CPC classification number: G06T11/60 ,  G06F40/40 ,  G06T7/73 ,  G06T11/206 ,  G06T2200/24 ,  G06T2207/20072

Abstract: Text is generated from an object. Text is generated from a first object. The first object includes a second object and a third object. A step of detecting coordinate data of the second object is included. A step of detecting coordinate data of the third object is included. A step of extracting positional relation between the second object and the third object from coordinate data is included. A step of converting the extracted positional relation into graph data is included. A step of generating text about the positional relation between the second object and the third object from graph data is included.

公开(公告)号：US11863728B2

公开(公告)日：2024-01-02

申请号：US17764622

申请日：2020-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Seiko Inoue ,  Daichi Mishima

IPC: H04N1/60

CPC classification number: H04N1/6086

Abstract: Color filters are used for color images obtained using imaging devices such as conventional image sensors. Imaging elements with color filters are sold, and an appropriate combination of the imaging element and a lens or the like is incorporated in an electronic device. Only providing a color filter to overlap a light-receiving region of an image sensor reduces the amount of light reaching the light-receiving region. An imaging system of the present invention includes a solid-state imaging element without a color filter, a storage device, and a learning device. Since the color filter is not included, colorization is performed on obtained monochrome image data (analog data), and coloring is performed using an AI system.