公开(公告)号：US11610918B2

公开(公告)日：2023-03-21

申请号：US16704462

申请日：2019-12-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L27/12 ,  H01L29/417 ,  G02F1/1339 ,  G02F1/1345 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L29/04 ,  H01L29/24 ,  H01L51/52

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

公开(公告)号：US10559599B2

公开(公告)日：2020-02-11

申请号：US16014367

申请日：2018-06-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L27/12 ,  G02F1/1339 ,  G02F1/1345 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L29/04 ,  H01L29/24 ,  H01L51/52

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

公开(公告)号：US20140256095A1

公开(公告)日：2014-09-11

申请号：US14282593

申请日：2014-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kunio Hosoya ,  Saishi Fujikawa ,  Yoko Chiba

IPC: H01L29/66

CPC classification number: H01L29/66765 ,  H01L27/1214 ,  H01L27/1288

Abstract: To provide a manufacturing method of a highly reliable TFT, by which a more refined pattern can be formed through a process using four or three masks, and a semiconductor device. A channel-etched bottom gate TFT structure is adopted in which a photoresist is selectively exposed to light by rear surface exposure utilizing a gate wiring to form a desirably patterned photoresist, and further, a halftone mask or a gray-tone mask is used as a multi-tone mask. Further, a step of lifting off using a halftone mask or a gray-tone mask and a step of reflowing a photoresist are used.

Abstract translation: 为了提供高度可靠的TFT的制造方法，通过该方法可以通过使用四个或三个掩模的工艺形成更精细的图案，以及半导体器件。 采用通道蚀刻的底栅TFT结构，其中光致抗蚀剂通过利用栅极布线的后表面曝光选择性曝光以形成期望的图案化光致抗蚀剂，此外，使用半色调掩模或灰色调色掩模作为 多色蒙版 此外，使用使用半色调掩模或灰色调掩模提起的步骤和回流光致抗蚀剂的步骤。

公开(公告)号：US12250855B2

公开(公告)日：2025-03-11

申请号：US17488376

申请日：2021-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L29/786 ,  H01L27/12 ,  H10K59/121 ,  H10K59/131 ,  H10K50/82

Abstract: A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

公开(公告)号：US11139359B2

公开(公告)日：2021-10-05

申请号：US15296270

申请日：2016-10-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L51/52

Abstract: A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

公开(公告)号：US10032796B2

公开(公告)日：2018-07-24

申请号：US15063737

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L29/12 ,  H01L27/12 ,  G02F1/1345 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24 ,  G02F1/1339 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1225 ,  G02F1/13392 ,  G02F1/13458 ,  G02F2001/13398 ,  G09G2300/0804 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/5221

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

公开(公告)号：US09564517B2

公开(公告)日：2017-02-07

申请号：US14282593

申请日：2014-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kunio Hosoya ,  Saishi Fujikawa ,  Yoko Chiba

IPC: H01L27/12 ,  H01L29/66

CPC classification number: H01L29/66765 ,  H01L27/1214 ,  H01L27/1288

Abstract: To provide a manufacturing method of a highly reliable TFT, by which a more refined pattern can be formed through a process using four or three masks, and a semiconductor device. A channel-etched bottom gate TFT structure is adopted in which a photoresist is selectively exposed to light by rear surface exposure utilizing a gate wiring to form a desirably patterned photoresist, and further, a halftone mask or a gray-tone mask is used as a multi-tone mask. Further, a step of lifting off using a halftone mask or a gray-tone mask and a step of reflowing a photoresist are used.

Abstract translation: 为了提供高度可靠的TFT的制造方法，通过该方法可以通过使用四个或三个掩模的工艺形成更精细的图案，以及半导体器件。 采用通道蚀刻的底栅TFT结构，其中光致抗蚀剂通过利用栅极布线的后表面曝光选择性曝光以形成期望的图案化光致抗蚀剂，此外，使用半色调掩模或灰色调色掩模作为 多色蒙版 此外，使用使用半色调掩模或灰色调掩模提起的步骤和回流光致抗蚀剂的步骤。