Long wavelength avalanche photodetector
    62.
    发明授权
    Long wavelength avalanche photodetector 失效
    长波长雪崩光电探测器

    公开(公告)号:US4473835A

    公开(公告)日:1984-09-25

    申请号:US275346

    申请日:1981-06-19

    CPC classification number: H01L31/1075

    Abstract: An avalanche photodetector useful at wavelengths as long as 1.7 microns with low noise is achieved. The crystal used includes successive layers of p-type indium phosphide, n-type indium phosphide, and n-type indium gallium arsenide. An appropriate total of fixed charges in the n-type indium phosphide and a graded bandgap heterointerface region are important for the improved results.

    Abstract translation: 实现了在具有低噪声的波长长达1.7微米的情况下可用的雪崩光电探测器。 所使用的晶体包括p型磷化铟,n型磷化铟和n型砷化铟镓的连续层。 在n型磷化铟和梯度带隙异质界面区域中适当的固定电荷总量对于改进的结果是重要的。

    Electrochemical photoetching of compound semiconductors
    63.
    发明授权
    Electrochemical photoetching of compound semiconductors 失效
    化学半导体的电化学光刻

    公开(公告)号:US4414066A

    公开(公告)日:1983-11-08

    申请号:US416472

    申请日:1982-09-10

    CPC classification number: H01L21/467 C25F3/12 H01L21/30635 H01L21/465

    Abstract: A procedure is described for electrochemically photoetching n-type and intrinsic compound semiconductors. The process involves applying a potential to the compound semiconductor while it is in contact with an electrolytic solution and irradiating the surface to be etched with light in a certain energy range. By suitable adjustment in the potential, electrolytic solution composition and light energy, the etch rate is made proportional to the light intensity. By suitable variation in light intensity and light-ray direction, various geometrical features can be made on the surface of the compound semiconductor. For example, a hole with straight sides can be made in the compound semiconductor by use of a light spot and parallel (collimated) light rays. An advantageous application of this process is the fabrication of a photodiode with a hole in the center for use in bidirectional communication systems and to monitor power output for optical communication sources. The advantage of this process is that no damage occurs outside etched hole so that a maximum area of the photodiode remains active for detecting incoming radiation. Another advantage of the process is that etching will stop where the material becomes p-type so that etching can be made to stop automatically at a p/n junction.

    Abstract translation: 描述了用于电化学光刻n型和本征化合物半导体的方法。 该方法包括在化合物半导体与电解液接触的同时施加电位,并在一定的能量范围内用光照射被蚀刻的表面。 通过适当调整电位,电解液组成和光能,刻蚀速率与光强成正比。 通过适当的光强度和光线方向的变化,可以在化合物半导体的表面上形成各种几何特征。 例如,可以通过使用光点和平行(准直)光线在化合物半导体中制造具有直边的孔。 该方法的有利应用是制造在中心具有用于双向通信系统的孔的光电二极管,并监视光通信源的功率输出。 该方法的优点是在蚀刻孔外部不产生损伤,使得光电二极管的最大面积保持活跃以检测入射辐射。 该方法的另一个优点是,在材料变为p型的情况下,蚀刻将停止,使得蚀刻可以在p / n结处自动停止。

    Nozzle geometry for organic vapor jet printing
    67.
    发明授权
    Nozzle geometry for organic vapor jet printing 有权
    用于有机蒸气喷射印刷的喷嘴几何形状

    公开(公告)号:US08931431B2

    公开(公告)日:2015-01-13

    申请号:US12729448

    申请日:2010-03-23

    CPC classification number: C23C14/12 B41J2/005 C23C14/04 C23C14/228

    Abstract: A first device is provided. The device includes a print head. The print head further includes a first nozzle hermetically sealed to a first source of gas. The first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle. At a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle.

    Abstract translation: 提供第一个设备。 该装置包括打印头。 打印头还包括密封到第一气体源的第一喷嘴。 第一喷嘴在垂直于第一喷嘴的流动方向的方向上具有最小尺寸为0.5至500微米的孔。 在与第一喷嘴的孔的最小尺寸的5倍的孔到第一喷嘴的距离处,垂直于流动方向的最小尺寸至少是第一喷嘴的孔的最小尺寸的两倍。

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