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公开(公告)号：US08024626B2
公开(公告)日：2011-09-20
申请号：US11552166
申请日：2006-10-24
IPC分类号： G11C29/00
CPC分类号： G11C29/802 , H03K19/1735
摘要： A method and system for repairing defective memory in a semiconductor chip. The chip has memory locations, redundant memory, and a central location for ordered fuses. The ordered fuses identify in compressed format defective sections of the memory locations. The defective sections are replaceable by sections of the redundant memory. The ordered fuses have an associated a fuse bit pattern of bits which sequentially represents the defective sections in the compressed format. The method and system determines the order in which the memory locations are wired together; designs a shift register of latches through the memory locations in accordance with the order in which the memory locations are wired together; and associates each of the latches with a corresponding bit of an uncompressed bit pattern from which the fuse bit pattern is derived. The uncompressed bit pattern comprises a sequence of bits, representing the defective sections in uncompressed format.
摘要翻译： 一种用于修复半导体芯片中的有缺陷的存储器的方法和系统。 该芯片具有存储器位置，冗余存储器和用于有序保险丝的中心位置。 有序保险丝以压缩格式识别存储器位置的缺陷部分。 有缺陷的部分可由冗余存储器的部分替换。 有序保险丝具有相关联的熔丝位模式，其顺序地表示压缩格式的缺陷部分。 方法和系统确定存储器位置连接在一起的顺序; 根据存储器位置连接在一起的顺序，通过存储器位置设计锁存器的移位寄存器; 并且将每个锁存器与从其导出熔丝位模式的未压缩位模式的对应位相关联。 未压缩比特模式包括一个比特序列，表示未压缩格式的缺陷部分。
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公开(公告)号：US07710800B2
公开(公告)日：2010-05-04
申请号：US11954479
申请日：2007-12-12
IPC分类号： G11C7/00
CPC分类号： G11C7/20 , G11C5/14 , G11C29/83 , G11C2029/4402
摘要： An approach that manages redundant memory in a voltage island is described. In one embodiment there is a design structure embodied in a machine readable medium used in a design process of a semiconductor device. In this embodiment, the design structure includes one or more voltage islands representing a power cycled region. One or more non-power cycled regions are located about the one or more voltage islands. Each of the one or more non-power cycled regions comprises at least one memory using redundancy and a repair register associated with each memory using redundancy. A redundancy initialization component is coupled to the one or more voltage islands and the one or more non-power cycled regions.
摘要翻译： 描述了管理电压岛中的冗余存储器的方法。 在一个实施例中，存在体现在用于半导体器件的设计过程中的机器可读介质中的设计结构。 在该实施例中，设计结构包括代表功率循环区域的一个或多个电压岛。 一个或多个非功率循环区域位于一个或多个电压岛周围。 一个或多个非功率循环区域中的每一个包括使用冗余的至少一个存储器和与使用冗余的每个存储器相关联的修复寄存器。 冗余初始化组件耦合到一个或多个电压岛和一个或多个非功率循环区域。
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63.发明申请公开(公告)号：US20090180584A1
公开(公告)日：2009-07-16
申请号：US12175534
申请日：2008-07-18
申请人： Darren L. Anand , John R. Goss , Peter O. Jakobsen , Michael R. Ouellette , Thomas O. Sopchak , Donald L. Wheater
发明人： Darren L. Anand , John R. Goss , Peter O. Jakobsen , Michael R. Ouellette , Thomas O. Sopchak , Donald L. Wheater
IPC分类号： G11C19/00
CPC分类号： G11C19/00 , G11C29/003
摘要： The invention provides a circuit that can observe data within shift registers without altering the data. The circuit includes selectors connected to the inputs and outputs of the shift registers. The selectors selectively connect the input with the output of a selected shift register to form a wiring loop for the selected shift register. A control device connected to the wiring loop uses the wiring loop to cause the data to be continually transferred from the output of the selected shift register to the input of the selected shift register and back through the selected shift register in a circular manner. The control device includes a counter used for determining the length of a selected shift register and a set of registers to store, for future use when rotating data in the shift registers, the length of each shift register. The control device also includes a data output accessible from outside the circuit. An observation wire is connected to the wiring loop, and the data passes from the wiring loop to the control device through the observation wire. The control device outputs data appearing on the wiring loop as the data is circulated through the selected shift register to permit data within the selected shift register to be observed outside the circuit without altering the data within the selected shift register.
摘要翻译： 本发明提供一种可以观察移位寄存器内的数据而不改变数据的电路。 该电路包括连接到移位寄存器的输入和输出的选择器。 选择器选择性地将输入与所选移位寄存器的输出连接，以形成所选移位寄存器的布线回路。 连接到布线回路的控制装置使用布线回路使得数据从所选择的移位寄存器的输出连续地传送到所选择的移位寄存器的输入端并循环地返回所选择的移位寄存器。 控制装置包括用于确定所选择的移位寄存器的长度的计数器和一组寄存器，用于存储当在移位寄存器中旋转数据时将来使用的每个移位寄存器的长度。 控制装置还包括从电路外部可访问的数据输出。 观察线连接到布线回路，数据通过观察线从布线回路传递到控制装置。 当数据通过选定的移位寄存器循环时，控制装置输出出现在布线环路上的数据，以允许在电路外观察所选移位寄存器内的数据，而不改变所选移位寄存器内的数据。
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64.发明申请公开(公告)号：US20090144673A1
公开(公告)日：2009-06-04
申请号：US12362541
申请日：2009-01-30
IPC分类号： G06F17/50
CPC分类号： G06F17/505
摘要： Processing engines (PE's) disposed on the substrate. Each processing engine includes a measurement and storage unit, and a PE controller coupled to each of the processing engines. The processing engines perform self-tests and store the results of the self-tests in the measurement and storage unit. The PE controller reads the results and selects a sub-set of processing engines based on the results and an optimization algorithm.
摘要翻译： 处理引擎（PE）设置在基板上。 每个处理引擎包括测量和存储单元以及耦合到每个处理引擎的PE控制器。 处理引擎执行自检并将测试结果存储在测量和存储单元中。 PE控制器根据结果和优化算法读取结果并选择一组处理引擎。
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65.发明申请Design Structure for an Integrated Circuit Having State-Saving Input-Output Circuitry and a Method of Testing Such an Integrated Circuit 审中-公开具有省电输入输出电路的集成电路的设计结构和测试这种集成电路的方法公开(公告)号：US20090115447A1
公开(公告)日：2009-05-07
申请号：US11933646
申请日：2007-11-01
IPC分类号： H03K19/003
CPC分类号： G06F17/505 , G01R31/3016 , G01R33/072 , G06F2217/14
摘要： A design structure for an integrated circuit that includes input/output (I/O) state saving circuitry capable of stabilizing the I/O states during any predicted I/O disturbance event. The I/O state saving circuitry includes a plurality of transparent latches arranged between the output of a plurality of respective I/O receivers and the internal digital, analog, or mixed-signal circuitry of the integrated circuit. The transparent latches are transitioned between a pass-through mode and a state-saving mode via a common control signal. In anticipation of, for example, a predicted I/O signal disturbance generating event, the transparent latches are set to the state-saving mode. Consequently, the outputs of the transparent latches are held stable and glitchless during the disturbance event, which ensures that the internal logic of the integrated circuit does not lose state.
摘要翻译： 一种用于集成电路的设计结构，其包括能够在任何预测的I / O干扰事件期间稳定I / O状态的输入/输出（I / O）状态保存电路。 I / O状态保存电路包括布置在多个相应I / O接收器的输出端与集成电路的内部数字，模拟或混合信号电路之间的多个透明锁存器。 透明锁存器通过公共控制信号在通过模式和状态保存模式之间转换。 在预期的例如预测的I / O信号干扰发生事件中，透明锁存器被设置为状态保存模式。 因此，在干扰事件期间，透明锁存器的输出保持稳定和无毛刺，这确保了集成电路的内部逻辑不会失去状态。
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公开(公告)号：US20080101145A1
公开(公告)日：2008-05-01
申请号：US11555323
申请日：2006-11-01
IPC分类号： G11C17/18
CPC分类号： G11C17/18 , G11C17/165 , G11C29/02 , G11C29/021 , G11C29/027 , G11C29/028 , G11C2029/5006
摘要： A method of providing optimal fuse programming conditions by which an integrated circuit chip customer may program electronic fuses in the field, i.e., outside of the manufacturing test environment. An optimal fuse programming identifier, which is correlated to optimal fuse programming conditions, may be provided to the customer in readable fashion on the customer's IC chip. Accessing the optimal fuse programming identifier on the customer's IC chip, the customer may apply a fuse programming process in the field according to one or more correlated optimal fuse programming conditions.
摘要翻译： 一种提供最佳熔丝编程条件的方法，集成电路芯片客户可以通过该条件来编程现场的电子熔丝，即在制造测试环境之外。 可以以客户的IC芯片的可读方式向客户提供与最佳熔丝编程条件相关的最佳熔丝编程标识符。 访问客户IC芯片上的最佳熔丝编程标识符，客户可以根据一个或多个相关的最佳熔丝编程条件在现场应用熔丝编程过程。
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67.发明申请公开(公告)号：US20080002451A1
公开(公告)日：2008-01-03
申请号：US11427849
申请日：2006-06-30
IPC分类号： G11C17/00
摘要： A differential fuse sensing system includes a fuse leg configured for introducing a sense current through an electrically programmable fuse (eFUSE) to be sensed, and a differential sense amplifier having a first input node coupled to the fuse leg and a second node coupled to a reference voltage. The fuse leg further includes a current supply device controlled by a variable reference current generator configured to generate an output signal therefrom such that the voltage on the first input node of the sense amplifier is equal to the voltage on the second input node of the sense amplifier whenever the resistance value of the eFUSE is equal to the resistance value of a programmable variable resistance device included within the variable reference current generator.
摘要翻译： 差分保险丝感测系统包括被配置用于通过要被感测的电可编程熔丝（eFUSE）引入感测电流的熔丝腿，以及具有耦合到熔丝支脚的第一输入节点和耦合到参考的第二节点的差分读出放大器 电压。 保险丝腿还包括由可变参考电流发生器控制的电流供应装置，其被配置为从其产生输出信号，使得读出放大器的第一输入节点上的电压等于读出放大器的第二输入节点上的电压 每当eFUSE的电阻值等于包括在可变参考电流发生器内的可编程可变电阻器件的电阻值时。
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公开(公告)号：US07304901B2
公开(公告)日：2007-12-04
申请号：US11160268
申请日：2005-06-16
IPC分类号： G11C29/00
CPC分类号： G11C29/4401 , G11C29/14 , G11C29/24 , G11C29/44
摘要： Methods and apparatuses for enabling a redundant memory element (20) during testing of a memory array (14). The memory array (14) includes general memory elements (18) and redundant memory elements (20). The general memory elements (18) are tested and any defective general memory elements (18) are replaced with redundant memory elements (20). The redundant memory elements (20) are tested only when they are enabled.
摘要翻译： 用于在存储器阵列（14）的测试期间启用冗余存储元件（20）的方法和装置。 存储器阵列（14）包括通用存储元件（18）和冗余存储元件（20）。 一般存储器元件（18）被测试，并且任何有缺陷的通用存储器元件（18）被替换为冗余存储元件（20）。 冗余存储器元件（20）仅在使能时被测试。
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公开(公告)号：US06961276B2
公开(公告)日：2005-11-01
申请号：US10664789
申请日：2003-09-17
申请人： Francois Ibrahim Atallah , James Norris Dieffenderfer , Jeffrey H. Fischer , Michael Thomas Fragano , Daniel Stephen Geise , Jeffery Howard Oppold , Michael R. Ouellette , Neelesh Govindaraya Pai , William Robert Reohr , Joel Abraham Silberman , Thomas Philip Speier
发明人： Francois Ibrahim Atallah , James Norris Dieffenderfer , Jeffrey H. Fischer , Michael Thomas Fragano , Daniel Stephen Geise , Jeffery Howard Oppold , Michael R. Ouellette , Neelesh Govindaraya Pai , William Robert Reohr , Joel Abraham Silberman , Thomas Philip Speier
CPC分类号： G11C7/22 , G11C7/06 , G11C7/1045
摘要： A random access memory circuit comprises a plurality of memory cells and at least one decoder coupled to the memory cells, the decoder being configurable for receiving an input address and for accessing one or more of the memory cells in response thereto. The random access memory circuit further comprises a plurality of sense amplifiers operatively coupled to the memory cells, the sense amplifiers being configurable for determining a logical state of one or more of the memory cells. A controller coupled to at least a portion of the sense amplifiers is configurable for selectively operating in at least one of a first mode and a second mode. In the first mode of operation, the controller enables one of the sense amplifiers corresponding to the input address and disables the sense amplifiers not corresponding to the input address. In the second mode of operation, the controller enables substantially all of the sense amplifiers. The memory circuit advantageously provides an adaptable latency by controlling the mode of operation of the circuit.
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70.发明授权公开(公告)号：US06552920B2
公开(公告)日：2003-04-22
申请号：US09892396
申请日：2001-06-27
IPC分类号： G11C1500
CPC分类号： G11C15/04
摘要： A method and structure for improving a content addressable memory array has a plurality of serially connected memory sub-arrays (which include at least one memory cell), a matchline connected to each of the sub-arrays, a valid memory cell, a comparator receiving input from the matchline and valid memory cell, a sinkline output from the comparator, and a precharge device. The sinkline and matchline are reset from a first voltage to a second voltage depending upon the results of a compare operation of the input data to the data in the storage device. When the second voltage appears on the matchline and the first voltage appears on the sinkline this indicates a match between the data within all of the sub-arrays and the input data.
摘要翻译： 用于改善内容可寻址存储器阵列的方法和结构具有多个串联的存储器子阵列（其包括至少一个存储器单元），连接到每个子阵列的匹配线，有效存储器单元，比较器接收 来自匹配线和有效存储器单元的输入，来自比较器的漏线输出和预充电器件。 取决于输入数据与存储装置中的数据的比较操作的结果，汇流线和匹配线从第一电压复位到第二电压。 当匹配线上出现第二个电压，并且第一个电压出现在漏极线上时，这表示所有子阵列中的数据和输入数据之间的匹配。
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