公开(公告)号：US06440840B1

公开(公告)日：2002-08-27

申请号：US10056976

申请日：2002-01-25

申请人： Ying-Ho Chen

发明人： Ying-Ho Chen

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76829

摘要： A novel copper damascene method for making metal interconnections on semiconductor integrated circuits was achieved. This method avoids overpolishing into a low-k dielectric fluorine-doped glass which would cause copper-flake defects resulting in intralevel electrical shorts. The method utilizes a stacked hard-mask layer on the doped glass layer consisting of a first polish-stop layer, a sacrificial insulating layer and an upper second polish-stop layer. After etching trenches in the stacked hard-mask layer and the doped glass, a copper layer is deposited to fill the trenches and is polished back to the second polish-stop layer. The high polish-back selectivity of the copper to the second polish-stop layer results in improved polish-back uniformity across the substrate. The relatively thin second polish-stop layer can then be polished back and partially into the sacrificial layer without overpolishing and damaging the underlying first polish-stop layer. The sacrificial layer is then removed to complete a level of metal interconnections. The method can be repeated to complete the multilevel of interconnections.

摘要翻译： 实现了一种在半导体集成电路上制作金属互连的新型铜镶嵌方法。 这种方法避免了过度抛光到低k电介质氟掺杂玻璃中，这会导致铜片缺陷，从而导致电泳电气短路。 该方法在由第一抛光停止层，牺牲绝缘层和上部第二抛光停止层组成的掺杂玻璃层上使用堆叠的硬掩模层。 在蚀刻堆叠的硬掩模层和掺杂玻璃中的沟槽之后，沉积铜层以填充沟槽并抛光回到第二抛光停止层。 铜对第二抛光 - 停止层的高抛光选择性导致改善整个衬底的抛光均匀性。 然后可以将相对较薄的第二抛光 - 停止层抛光并部分地进入牺牲层，而不会过度抛光并损坏下面的第一抛光 - 停止层。 然后去除牺牲层以完成一定程度的金属互连。 可以重复该方法来完成多层互连。

公开(公告)号：US06391780B1

公开(公告)日：2002-05-21

申请号：US09378949

申请日：1999-08-23

申请人： Tsu Shih ,  Ying-Ho Chen ,  Jih-Churng Twu

发明人： Tsu Shih ,  Ying-Ho Chen ,  Jih-Churng Twu

IPC分类号： H01L21302

CPC分类号： H01L21/3212

摘要： A process for manufacturing damascene wiring in integrated circuits is described. Trenches in the top most layer are first over-filled with a soft metal (such as copper) and then a relatively thin layer of a hard material such as tantalum, tantalum nitride, titanium, titanium nitride etc is deposited on the copper surface Under a first set of control conditions CMP is then applied for just long enough to selectively remove this hard material layer from peaks in the copper surface while leaving it intact in the valleys. The control conditions for CMP are then adjusted so that CMP can proceed with material at the peaks being removed at a significantly faster rate than in the valleys. Thus, when the point is reached that all copper outside the trenches has been removed, the trenches are found to be just filled with a flat layer that has no dishing.

摘要翻译： 描述了在集成电路中制造镶嵌线的工艺。 首先用软金属（例如铜）填充最顶层的沟槽，然后在铜表面上沉积相对薄的硬质材料如钽，氮化钽，钛，氮化钛等层 第一组控制条件CMP然后施加足够长的时间以从铜表面的峰中选择性地去除该硬质材料层，同时将其完整地留在谷中。 然后调整CMP的控制条件，使得CMP可以以比在谷中明显更快的速率除去峰值处的材料继续进行。 因此，当达到沟槽外部的所有铜已经被去除的地方时，发现沟槽刚好填充有没有凹陷的平坦层。

公开(公告)号：US4806555A

公开(公告)日：1989-02-21

申请号：US15406

申请日：1987-02-17

申请人： Carl D. Lunsford ,  Ying-Ho Chen

发明人： Carl D. Lunsford ,  Ying-Ho Chen

IPC分类号： C07C43/196 ,  C07C43/23 ,  C07C45/71 ,  C07D211/14 ,  C07D211/70 ,  C07D213/64 ,  C07D215/06 ,  C07D217/04 ,  C07D295/092 ,  A61K31/135 ,  C07C93/06

CPC分类号： C07D213/64 ,  C07C43/196 ,  C07C43/23 ,  C07C45/71 ,  C07D211/14 ,  C07D211/70 ,  C07D215/06 ,  C07D217/04 ,  C07D295/088

摘要： Novel 1-aryloxy-4-amino-2-butanols of the formulaArO--CH.sub.2 --CHOH--CH.sub.2 --CH.sub.2 --NR.sup.1 R.sup.2wherein Ar is 1-naphthyl, 2-naphthyl, indene-4(or 5-)yl, 3-(or 5-)chloro-2-pyridyl, phenyl, monosubstituted phenyl or di-substituted phenyl, R.sup.1 is lower alkyl, phenyl, phenylalkyl, 2-hydroxymethyl-2-propyl, adamantyl or lower-cycloalkyl, R.sup.2 is hydrogen or lower alkyl, wherein R.sup.1 and R.sup.2 together with the adjacent nitrogen from a heterocyclic residue and the pharmaceutically acceptable acid addition salts thereof having local anesthetic, beta-adrenergic blocking, antihypertensive and antiarrhythmic properties are disclosed. The compounds are prepared by reacting novel 1-aryloxy-4-chloro-2-butanols with amines. Methods for the preparation of the novel 1-aryloxy-4-chloro-2-butanol intermediates are also disclosed.

摘要翻译： 式ArO-CH2-CHOH-CH2-CH2-NR1R2的新型1-芳氧基-4-氨基-2-丁醇其中Ar为1-萘基，2-萘基，茚-4（或5-）基，3-（ 苯基，苯基烷基，2-羟基甲基-2-丙基，金刚烷基或低级环烷基，R 2是氢或低级烷基，R 2是氢或低级烷基， 其中R 1和R 2与来自杂环残基的相邻氮和其药学上可接受的酸加成盐具有局部麻醉剂，β-肾上腺素能阻断剂，抗高血压药和抗心律失常药物。 该化合物通过新颖的1-芳氧基-4-氯-2-丁醇与胺反应来制备。 还公开了制备新型1-芳氧基-4-氯-2-丁醇中间体的方法。

公开(公告)号：US4538001A

公开(公告)日：1985-08-27

申请号：US649331

申请日：1984-09-11

申请人： Carl D. Lunsford ,  Ying-Ho Chen

发明人： Carl D. Lunsford ,  Ying-Ho Chen

IPC分类号： C07C43/196 ,  C07C43/23 ,  C07C45/71 ,  C07D211/14 ,  C07D211/70 ,  C07D213/64 ,  C07D215/06 ,  C07D217/04 ,  C07D295/092 ,  C07C43/225

CPC分类号： C07D213/64 ,  C07C43/196 ,  C07C43/23 ,  C07C45/71 ,  C07D211/14 ,  C07D211/70 ,  C07D215/06 ,  C07D217/04 ,  C07D295/088

摘要： Novel 1-aryloxy-4-amino-2-butanols of the formulaArO--CH.sub.2 --CHOH--CH.sub.2 --CH.sub.2 --NR.sup.1 R.sup.2wherein Ar is 1-naphthyl, 2-naphthyl, indene-4(or 5-)yl, 3-(or 5-)chloro-2-pyridyl, phenyl, monosubstituted phenyl or di-substituted phenyl, R.sup.1 is lower alkyl, phenyl, phenyl-alkyl, 2-hydroxymethyl-2-propyl, adamantyl or lower-cycloalkyl, R.sup.2 is hydrogen or lower alkyl, wherein R.sup.1 and R.sup.2 together with the adjacent nitrogen form a heterocyclic residue and the pharmaceutically acceptable acid addition salts thereof having local anesthetic, beta-adrenergic blocking, antihypertensive and antiarrhythmic properties are disclosed. The compounds are prepared by reacting novel 1-aryloxy-4-chloro-2-butanols with amines. Methods for the preparation of the novel 1-aryloxy-4-chloro-2-butanol intermediates are also disclosed.

摘要翻译： 式ArO-CH2-CHOH-CH2-CH2-NR1R2的新型1-芳氧基-4-氨基-2-丁醇其中Ar为1-萘基，2-萘基，茚-4（或5-）基，3-（ 苯基，苯基，苯基 - 烷基，2-羟甲基-2-丙基，金刚烷基或低级环烷基，R 2为氢或低级 烷基，其中R 1和R 2与相邻的氮一起形成杂环残基，并且其中药学上可接受的酸加成盐具有局部麻醉剂，β-肾上腺素能阻断剂，抗高血压药和抗心律失常药物。 该化合物通过新颖的1-芳氧基-4-氯-2-丁醇与胺反应来制备。 还公开了制备新型1-芳氧基-4-氯-2-丁醇中间体的方法。

公开(公告)号：US4377582A

公开(公告)日：1983-03-22

申请号：US266257

申请日：1981-05-22

申请人： Ying-Ho Chen

发明人： Ying-Ho Chen

IPC分类号： C07D239/94 ,  A61K31/505

CPC分类号： C07D239/94

摘要： Novel hypotensive agents are disclosed which are quinazolines substituted in the 2 and 4 position having the general formula: ##STR1## wherein Q is a secondary amine radical illustrated by loweralkanolylamino or a tertiary amine radical such as pyrrolidinyl, piperidinyl or piperazinyl, any of which may be substituted by various groups such as loweralkanolyl.

摘要翻译： 公开了新的降压剂，其在2和4位被喹唑啉取代，具有以下通式：其中Q是由低级烷酰胺基或叔胺基例如吡咯烷基，哌啶基或哌嗪基所示的仲胺基，其中任何一种可以 被各种基团取代，例如低级烷酰基。

公开(公告)号：US3941806A

公开(公告)日：1976-03-02

申请号：US218833

申请日：1972-01-18

申请人： William John Welstead, Jr. ,  Ying-Ho Chen

发明人： William John Welstead, Jr. ,  Ying-Ho Chen

IPC分类号： C07D209/08 ,  C07D223/16 ,  C07D209/12 ,  A61K31/40

CPC分类号： C07D223/16 ,  C07D209/08 ,  Y10S514/937 ,  Y10S514/96

摘要： The preparation of compounds of the formula ##SPC1##Wherein R is selected from the group consisting of hydrogen and chlorine is described. The compounds are useful as chemical intermediates and as anti-inflammatory agents.

摘要翻译： 描述式WHEREIN R选自氢和氯的化合物的制备。 该化合物可用作化学中间体和抗炎剂。

公开(公告)号：US20050170980A1

公开(公告)日：2005-08-04

申请号：US10769245

申请日：2004-01-30

申请人： Hsin-Hsien Lu ,  Han-Hsin Kuo ,  Ying-Ho Chen ,  Syum-Ming Jang

发明人： Hsin-Hsien Lu ,  Han-Hsin Kuo ,  Ying-Ho Chen ,  Syum-Ming Jang

IPC分类号： C11D7/26 ,  C11D11/00 ,  H01L21/02 ,  C11D1/00

CPC分类号： C11D7/262 ,  C11D7/261 ,  C11D11/0047 ,  H01L21/02074

摘要： A method for the cleaning of wafers typically during a chemical mechanical polishing (CMP) process. The method includes polishing a material layer on a wafer in sequential polishing steps, rinsing the wafer using a novel surfactant composition solution after at least one of the polishing steps and rinsing of the wafer using deionized water, respectively. The surfactant composition solution imparts a generally hydrophilic character to a hydrophobic material layer such as a high-k dielectric layer on the wafer. Consequently, the layer is rendered amenable to cleaning by deionized water, thereby significantly enhancing the removal of particles from the layer and reducing the number of defects related to the CMP process.

摘要翻译： 通常在化学机械抛光（CMP）工艺期间清洗晶片的方法。 该方法包括在顺序抛光步骤中抛光晶片上的材料层，在至少一个抛光步骤和使用去离子水冲洗晶片之后，使用新型表面活性剂组合物溶液冲洗晶片。 表面活性剂组合物溶液对疏水性材料层（例如晶片上的高k电介质层）具有普遍的亲水性。 因此，该层适于用去离子水清洗，从而显着增强颗粒从层中的去除并减少与CMP工艺相关的缺陷数量。

公开(公告)号：US06733373B1

公开(公告)日：2004-05-11

申请号：US09540326

申请日：2000-03-31

申请人： Chia-Ming Yang ,  Chin-Hsin Peng ,  Jian-Lin Hwang ,  Ying-Ho Chen

发明人： Chia-Ming Yang ,  Chin-Hsin Peng ,  Jian-Lin Hwang ,  Ying-Ho Chen

IPC分类号： B24B2100

CPC分类号： B24B37/11 ,  B24B21/04 ,  B24D11/06

摘要： A polishing assembly for use in a linear chemical mechanical polishing apparatus and a method for forming such assembly are described. In the polishing assembly, a plurality of polishing pads are adhesively joined to a top surface of a continuous belt. Each of the plurality of polishing pads is provided with a leading edge which has a lower lip and a trailing edge which has an upper lip. The upper lip of the trailing edge of a first polishing pad covers the lower lip of the leading edge of a second polishing pad when the pads are adhesively bonded to the continuous belt such that the first pad leads the second pad in the direction of rotation for the continuous belt such that the upper lip protects the lower lip to prevent delamination of the pads. The tight seam made possible by the present invention novel tapered joint further prevents water absorption or penetration and therefore prolongs the lifetime of the polishing pads.

摘要翻译： 描述了用于线性化学机械抛光装置的抛光组件和用于形成这种组件的方法。 在抛光组件中，多个抛光垫被粘合地连接到连续带的顶表面。 多个抛光垫中的每一个设置有前缘，该前缘具有下唇和具有上唇的后缘。 当衬垫粘合到连续带上时，第一抛光垫的后缘的上唇覆盖第二抛光垫的前缘的下唇，使得第一垫在旋转方向上引导第二垫， 连续带，使得上唇保护下唇以防止垫的分层。 通过本发明实现的紧密接缝，新颖的锥形接头进一步防止吸水或渗透，从而延长抛光垫的使用寿命。

公开(公告)号：US06227947B1

公开(公告)日：2001-05-08

申请号：US09366231

申请日：1999-08-03

申请人： Tien-Chen Hu ,  Jih-Churng Twu ,  Ying-Ho Chen ,  Tsu Shih

发明人： Tien-Chen Hu ,  Jih-Churng Twu ,  Ying-Ho Chen ,  Tsu Shih

IPC分类号： B24B100

CPC分类号： B24B53/017 ,  B24B53/013

摘要： An apparatus and a method for chemical mechanical polishing a metal on a semiconductor wafer capable of achieving improved pad life are disclosed. In the apparatus, in addition to a first spray nozzle used for spraying a slurry solution onto the top of a polishing pad, a second spray nozzle is provided for mounting juxtaposed to a conditioning pad for dispensing a cleaning solution capable of dissolving polishing debris formed on the polishing pad surface. The apparatus may further include at least one cleaning solution reservoir for storing and delivering a cleaning solution to the second spray nozzle. The method can be advantageously carried out in two-steps during which a first cleaning solution is sprayed onto the pad surface for dissolving the polishing debris, and then a second cleaning solution is sprayed onto the pad surface for removing or flushing away the dissolved debris. In one illustration for the removal of oxides of copper, an acid-containing or ammonium hydroxide-containing cleaning solution is used advantageously to dissolve the oxides, and then deionized water is used to remove the dissolved debris from the pad surface.

摘要翻译： 公开了一种用于化学机械抛光半导体晶片上的能够实现改善的焊盘寿命的装置和方法。 在该装置中，除了用于将浆液溶液喷洒到抛光垫的顶部上的第一喷嘴之外，还提供了第二喷嘴，用于与调节垫并置安装，用于分配能够溶解在 抛光垫表面。 该设备还可以包括至少一个清洁溶液储存器，用于将清洁溶液存储并输送到第二喷嘴。 该方法可以有利地在两个步骤中进行，在此期间将第一清洁溶液喷涂到垫表面上用于溶解抛光碎片，然后将第二清洁溶液喷涂到垫表面上以除去或冲洗掉溶解的碎屑。 在一个说明中，为了去除铜的氧化物，含有酸或氢氧化铵的清洗溶液有利地用于溶解氧化物，然后使用去离子水从衬垫表面去除溶解的碎屑。

公开(公告)号：US4463190A

公开(公告)日：1984-07-31

申请号：US418942

申请日：1982-09-16

申请人： Carl D. Lunsford ,  Ying-Ho Chen

发明人： Carl D. Lunsford ,  Ying-Ho Chen

IPC分类号： C07C43/196 ,  C07C43/23 ,  C07C45/71 ,  C07D211/14 ,  C07D211/70 ,  C07D213/64 ,  C07D215/06 ,  C07D217/04 ,  C07D295/092 ,  C07C93/06 ,  C07C83/00 ,  C07C93/00 ,  C07C95/00

CPC分类号： C07D213/64 ,  C07C43/196 ,  C07C43/23 ,  C07C45/71 ,  C07D211/14 ,  C07D211/70 ,  C07D215/06 ,  C07D217/04 ,  C07D295/088

摘要： Novel 1-aryloxy-4-amino-2-butanols of the formulaArO--CH.sub.2 --CHOH--CH.sub.2 --CH.sub.2 --NR.sup.1 R.sup.2wherein Ar is 1-naphthyl, 2-naphthyl, indene-4(or 5-)yl, 3-(or 5-)chloro-2-pyridyl, phenyl, monosubstituted phenyl or di-substituted phenyl, R.sup.1 is lower alkyl, phenyl, phenylalkyl, 2-hydroxymethyl-2-propyl, adamantyl or lower-cycloalkyl, R.sup.2 is hydrogen or lower alkyl, wherein R.sup.1 and R.sup.2 together with the adjacent nitrogen form a heterocyclic residue and the pharmaceutically acceptable acid addition salts thereof having local anesthetic, beta-adrenergic blocking, antihypertensive and antiarrhythmic properties are disclosed. The compounds are prepared by reacting novel 1-aryloxy-4-chloro-2-butanols with amines. Methods for the preparation of the novel 1-aryloxy-4-chloro-2-butanol intermediates are also disclosed.

摘要翻译： 式ArO-CH2-CHOH-CH2-CH2-NR1R2的新型1-芳氧基-4-氨基-2-丁醇其中Ar为1-萘基，2-萘基，茚-4（或5-）基，3-（ 苯基，苯基烷基，2-羟基甲基-2-丙基，金刚烷基或低级环烷基，R 2是氢或低级烷基，R 2是氢或低级烷基， 其中R1和R2与相邻的氮一起形成杂环残基，并且公开了其具有局部麻醉剂，β-肾上腺素能阻断剂，抗高血压药和抗心律失常药物的药学上可接受的酸加成盐。 该化合物通过新颖的1-芳氧基-4-氯-2-丁醇与胺反应来制备。 还公开了制备新型1-芳氧基-4-氯-2-丁醇中间体的方法。