Spin-orbit torque magnetoresistance effect element and magnetic memory

    公开(公告)号:US11211552B2

    公开(公告)日:2021-12-28

    申请号:US16645055

    申请日:2019-05-13

    Inventor: Yohei Shiokawa

    Abstract: This spin-orbit torque magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit torque wiring on which the first ferromagnetic layer is laminated, wherein the spin-orbit torque wiring extends in a second direction crossing a first direction which is an orthogonal direction of the first ferromagnetic layer, the first ferromagnetic layer includes a first laminate structure and an interfacial magnetic layer in order from the spin-orbit torque wiring side, the first laminate structure is a structure obtained by arranging a ferromagnetic conductor layer and an oxide-containing layer in order from the spin-orbit torque wiring side, the ferromagnetic conductor layer includes a ferromagnetic metal element, and the oxide-containing layer includes an oxide of a ferromagnetic metal element.

    Spin element and reservoir element
    65.
    发明授权

    公开(公告)号:US11139340B2

    公开(公告)日:2021-10-05

    申请号:US16788419

    申请日:2020-02-12

    Abstract: A magnetic recording array includes: a plurality of spin elements each including a wiring and a laminated body having a first ferromagnetic layer laminated on the wiring and arranged in a matrix; a plurality of write wirings connected to first ends of the spin elements' wiring; a plurality of read wirings connected to the laminated bodies of the spin elements; a plurality of common wirings connected to second ends of the wirings of the spin elements belonging to the same column; and a control unit configured to control a write current flowing between first and second ends of each spin element, wherein when data writing is performed continuously, the unit is configured to prohibit writing to at least a spin element connected to the same common wiring as a first spin element and adjacent to the first spin element after the first element to which the current is applied.

    Method for stabilizing spin element and method for manufacturing spin element

    公开(公告)号:US10763430B2

    公开(公告)日:2020-09-01

    申请号:US16082483

    申请日:2018-02-28

    Abstract: In the method for stabilizing a spin element according to an aspect of the disclosure, the spin element includes a current-carrying part extending in a first direction, and an element part laminated on one surface of the current-carrying part and including a ferromagnetic material, in the case where the environmental temperature is a predetermined temperature, a pulse current having a current density of 1.0×107 A/cm2 or more and 1.0×109 A/cm2 or less and a pulse width within a predetermined range is applied at least a predetermined number of times in the first direction of the current-carrying part at intervals of a predetermined waiting time.

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