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公开(公告)号:US11521776B2
公开(公告)日:2022-12-06
申请号:US17123514
申请日:2020-12-16
Applicant: TDK CORPORATION
Inventor: Tomoyuki Sasaki , Yohei Shiokawa
IPC: H01F10/32 , G11C11/16 , H01L43/12 , H01L43/08 , H01L43/10 , G01R33/09 , H01L43/04 , H01L43/14 , H01L43/06
Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.
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公开(公告)号:US11239411B2
公开(公告)日:2022-02-01
申请号:US16292798
申请日:2019-03-05
Applicant: TDK CORPORATION
Inventor: Yohei Shiokawa
Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit-torque wiring extending in a first direction; an antiferromagnetic layer laminated on one surface of the spin-orbit-torque wiring; and a first ferromagnetic layer located on a side of the antiferromagnetic layer opposite to the spin-orbit-torque wiring and magnetically coupled with the antiferromagnetic layer by exchange coupling, wherein a length of the antiferromagnetic layer in the first direction is shorter than a length of the spin-orbit-torque wiring in the first direction.
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公开(公告)号:US11222919B2
公开(公告)日:2022-01-11
申请号:US15840377
申请日:2017-12-13
Applicant: TDK CORPORATION
Inventor: Yohei Shiokawa , Tomoyuki Sasaki
Abstract: A spin current magnetization rotational element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated in a second direction intersecting with the spin-orbit torque wiring, wherein the first ferromagnetic layer comprises a plurality of ferromagnetic constituent layers and at least one inserted layer sandwiched between adjacent ferromagnetic constituent layers, and polarities of spin Hall angles of two layers, which sandwich at least one of the ferromagnetic constituent layers among the plurality of the ferromagnetic constituent layers, differ.
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公开(公告)号:US11211552B2
公开(公告)日:2021-12-28
申请号:US16645055
申请日:2019-05-13
Applicant: TDK CORPORATION
Inventor: Yohei Shiokawa
Abstract: This spin-orbit torque magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit torque wiring on which the first ferromagnetic layer is laminated, wherein the spin-orbit torque wiring extends in a second direction crossing a first direction which is an orthogonal direction of the first ferromagnetic layer, the first ferromagnetic layer includes a first laminate structure and an interfacial magnetic layer in order from the spin-orbit torque wiring side, the first laminate structure is a structure obtained by arranging a ferromagnetic conductor layer and an oxide-containing layer in order from the spin-orbit torque wiring side, the ferromagnetic conductor layer includes a ferromagnetic metal element, and the oxide-containing layer includes an oxide of a ferromagnetic metal element.
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公开(公告)号:US11139340B2
公开(公告)日:2021-10-05
申请号:US16788419
申请日:2020-02-12
Applicant: TDK CORPORATION
Inventor: Yohei Shiokawa , Atsushi Tsumita
IPC: H01L27/22 , G11C11/16 , H01L23/528 , H01L43/02
Abstract: A magnetic recording array includes: a plurality of spin elements each including a wiring and a laminated body having a first ferromagnetic layer laminated on the wiring and arranged in a matrix; a plurality of write wirings connected to first ends of the spin elements' wiring; a plurality of read wirings connected to the laminated bodies of the spin elements; a plurality of common wirings connected to second ends of the wirings of the spin elements belonging to the same column; and a control unit configured to control a write current flowing between first and second ends of each spin element, wherein when data writing is performed continuously, the unit is configured to prohibit writing to at least a spin element connected to the same common wiring as a first spin element and adjacent to the first spin element after the first element to which the current is applied.
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公开(公告)号:US10971293B2
公开(公告)日:2021-04-06
申请号:US16222037
申请日:2018-12-17
Applicant: TDK CORPORATION
Inventor: Tomoyuki Sasaki , Yohei Shiokawa
IPC: H01L43/12 , H01L43/08 , H01L43/10 , H01F10/32 , G01R33/09 , H01L43/04 , H01L43/14 , H01L43/06 , G11C11/16
Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.
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公开(公告)号:US10902987B2
公开(公告)日:2021-01-26
申请号:US16227850
申请日:2018-12-20
Applicant: TDK CORPORATION
Inventor: Tomoyuki Sasaki , Yohei Shiokawa
IPC: G11C11/00 , H01F10/32 , G11C11/16 , H01L43/14 , H01L43/04 , G11C11/18 , H01L43/10 , H01L43/12 , H01L43/06 , H01L43/08
Abstract: The spin-orbit torque magnetization rotational element includes a spin-orbit torque wiring layer which extends in an X direction and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer. The first ferromagnetic layer has shape anisotropy and has a major axis in the X direction. An easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.
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公开(公告)号:US10763430B2
公开(公告)日:2020-09-01
申请号:US16082483
申请日:2018-02-28
Applicant: TDK CORPORATION
Inventor: Yohei Shiokawa , Tomoyuki Sasaki
Abstract: In the method for stabilizing a spin element according to an aspect of the disclosure, the spin element includes a current-carrying part extending in a first direction, and an element part laminated on one surface of the current-carrying part and including a ferromagnetic material, in the case where the environmental temperature is a predetermined temperature, a pulse current having a current density of 1.0×107 A/cm2 or more and 1.0×109 A/cm2 or less and a pulse width within a predetermined range is applied at least a predetermined number of times in the first direction of the current-carrying part at intervals of a predetermined waiting time.
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公开(公告)号:US10756262B2
公开(公告)日:2020-08-25
申请号:US16282884
申请日:2019-02-22
Applicant: TDK CORPORATION
Inventor: Eiji Komura , Yohei Shiokawa
Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit-torque wiring which extends in a first direction; and a first ferromagnetic layer which is laminated in a second direction intersecting the spin-orbit-torque wiring, wherein the spin-orbit-torque wiring includes a convex portion which protrudes in the second direction in relation to a first surface on the side of the first ferromagnetic layer at a connecting part between the spin-orbit-torque wiring and the first ferromagnetic layer.
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公开(公告)号:US10748563B2
公开(公告)日:2020-08-18
申请号:US16222009
申请日:2018-12-17
Applicant: TDK CORPORATION
Inventor: Tomoyuki Sasaki , Yohei Shiokawa
Abstract: A magnetoresistance effect element has a structure in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are subsequently laminated and outer circumferential portions of the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer are covered with a first insulating film which contains silicon nitride as a main component and has boron nitride or aluminum nitride further added thereto.
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