公开(公告)号：US20070059848A1

公开(公告)日：2007-03-15

申请号：US10570787

申请日：2004-09-06

申请人： Yuichiro Sasaki ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

发明人： Yuichiro Sasaki ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

IPC分类号： H01L21/66 ,  H01L21/26 ,  H01L21/04 ,  H01L21/00

CPC分类号： H01L21/265

摘要： Disclosed here is a method of controlling a dose amount of dopant to be doped into object (1) to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of object (1), the amount of ions having dopant in plasma that collide with object (1), and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of object (1), and a dose amount by ions from the determined amount of ions containing dopant that collide with object (1); and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.

摘要翻译： 这里公开了一种控制待掺杂到待等离子体掺杂的物体（1）中的掺杂剂的剂量的方法。 根据该方法，掺杂控制由以下处理形成：确定物体（1）的温度，与物体（1）碰撞的等离子体中具有掺杂剂的离子的量以及掺杂期间的等离子体中的气体的种类; 根据物体（1）的温度由中性气体计算剂量，以及来自与物体（1）碰撞的确定量的含离子的离子的剂量; 并进行掺杂，使得中性气体的剂量量与离子的剂量之和等于预定剂量的量。

公开(公告)号：US20080210167A1

公开(公告)日：2008-09-04

申请号：US12122492

申请日：2008-05-16

申请人： Bunji Mizino ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

发明人： Bunji Mizino ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

IPC分类号： C23C16/44

CPC分类号： H01L21/67167 ,  H01J37/32412 ,  H01L21/2236

摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

公开(公告)号：US20100297836A1

公开(公告)日：2010-11-25

申请号：US12808285

申请日：2008-12-11

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

IPC分类号： H01L21/26 ,  H01J37/317

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/3299

摘要： A top plate, disposed on an upper portion of a vacuum container so as to face a substrate-placing area of a sample electrode, is provided with an impurity-containing film that contains an impurity, and is formed on a top plate peripheral edge portion area that is a face exposable to a plasma generated in the vacuum container, and is located on a peripheral edge of a top plate center portion area that faces the center portion of the substrate-placing area.

摘要翻译： 设置在真空容器的上部以与样品电极的基板放置区域相对的顶板设置有含杂质的膜，其含有杂质，并且形成在顶板周缘部 该区域是在真空容器中产生的等离子体可暴露的面，并且位于面向基板放置区域的中心部分的顶板中心部区域的周缘上。

公开(公告)号：US07800165B2

公开(公告)日：2010-09-21

申请号：US12025504

申请日：2008-02-04

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Keiichi Nakamoto ,  Hiroyuki Ito ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Keiichi Nakamoto ,  Hiroyuki Ito ,  Bunji Mizuno

IPC分类号： H01L29/78

CPC分类号： H01L29/785 ,  H01L29/66803 ,  H01L29/78621

摘要： A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.

摘要翻译： 在基板上形成具有上表面和侧面的半导体区域。 第一杂质区形成在半导体区域的上部。 第二杂质区域形成在半导体区域的侧部。 第二杂质区的电阻率基本上等于或小于第一杂质区的电阻率。

公开(公告)号：US07790586B2

公开(公告)日：2010-09-07

申请号：US12158852

申请日：2007-11-13

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

IPC分类号： H01L21/26 ,  H01L21/265 ,  H01L21/425

CPC分类号： H01L21/2236

摘要： An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter.

摘要翻译： 通过将衬底暴露于由真空室中含有杂质的气体产生的等离子体，在衬底的表面中形成杂质区。 在该过程中，相对于要引入衬底的杂质的剂量设置等离子体掺杂条件，使得在衬底的中心部分和周边部分中的第一个剂量大于第二个 在掺杂的初始阶段期间的剂量，其中第二剂量变得大于其后的第一剂量。

公开(公告)号：US07741199B2

公开(公告)日：2010-06-22

申请号：US12040476

申请日：2008-02-29

申请人： Yuichiro Sasaki ,  Bunji Mizuno ,  Cheng-Guo Jin

发明人： Yuichiro Sasaki ,  Bunji Mizuno ,  Cheng-Guo Jin

IPC分类号： H01L21/265

CPC分类号： H01L21/26506 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/2254 ,  Y10T117/10

摘要： A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

公开(公告)号：US07700382B2

公开(公告)日：2010-04-20

申请号：US10572144

申请日：2004-09-22

申请人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno

发明人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno

IPC分类号： H01L21/26 ,  G01R31/26

CPC分类号： H01L21/2236 ,  H01L21/26513 ,  H01L21/268 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： A subject of the present invention is to realize an impurity doping not to bring about a rise of a substrate temperature.Another subject of the present invention is to measure optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized.An impurity doping method, includes a step of doping an impurity into a surface of a solid state base body, a step of measuring an optical characteristic of an area into which the impurity is doped, a step of selecting annealing conditions based on a measurement result to meet the optical characteristic of the area into which the impurity is doped, and a step of annealing the area into which the impurity is doped, based on the selected annealing conditions.

摘要翻译： 本发明的目的是实现杂质掺杂不会引起衬底温度的升高。 本发明的另一主题是测量由杂质掺杂步骤产生的晶格缺陷的光学物理性能，以便控制以使后续步骤被优化。 杂质掺杂方法包括将杂质掺杂到固态基体的表面的步骤，测量掺杂杂质的区域的光学特性的步骤，基于测量结果选择退火条件的步骤 以满足掺杂杂质的区域的光学特性，以及基于所选择的退火条件对杂质掺杂的区域进行退火的步骤。

公开(公告)号：US20100015788A1

公开(公告)日：2010-01-21

申请号：US12518392

申请日：2008-09-05

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

IPC分类号： H01L21/265

CPC分类号： H01L21/2236 ,  H01L21/268

摘要： Plasma doping is performed by exposing a support substrate 11 made of a semiconductor to a plasma generated from a mixed gas of boron 51 which is an impurity and hydrogen 52 and helium 53 which are diluents so as to implant the boron 51 into the support substrate 11. Then, a preliminary heating step is performed by heating the support substrate 11 so that doses of the hydrogen 52 and the helium 53 are smaller than that of the boron 51 in the support substrate 11 by utilizing a difference between a thermal diffusion coefficient of the boron 51 in the support substrate 11 and those of the hydrogen 52 and the helium 53. Then, a laser heating step is performed for electrically activating the boron 51 implanted into the support substrate 11 using a laser.

摘要翻译： 通过将由半导体制成的支撑基板11暴露于由作为杂质的硼51和作为稀释剂的氢52和氦53的混合气体产生的等离子体进行等离子体掺杂，以将硼51注入到支撑基板11中 然后，通过加热支撑基板11，通过利用支撑基板11的热扩散系数的差异，通过加热支撑基板11使得氢52和氦53的剂量小于支撑基板11中的硼51的剂量来进行预热加热步骤 支撑基板11中的硼51以及氢52和氦53的硼。然后，使用激光进行激活加入到支撑基板11中的硼51的激光加热步骤。

公开(公告)号：US20090266298A1

公开(公告)日：2009-10-29

申请号：US12430551

申请日：2009-04-27

申请人： Katsumi Okashita ,  Yuichiro Sasaki ,  Bunji Mizuno

发明人： Katsumi Okashita ,  Yuichiro Sasaki ,  Bunji Mizuno

IPC分类号： B05C11/00

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/3299

摘要： On an upper wall of a vacuum container opposing a sample electrode, a plasma-invasion prevention-and-electron beam introducing hole is installed which is communicated with an electron beam introducing tube, and is used for introducing an electron beam toward a substrate in the vacuum container, as well as for preventing invasion of plasma into the electron beam introducing tube. In this structure, supposing that the Debye length of the plasma is set to λd and that a thickness of the sheath is set to Sd, the electron beam introducing hole has a diameter D satisfying a following equation: D≦2λd+2Sd.

摘要翻译： 在与样品电极相对的真空容器的上壁上，安装有与电子束导入管连通的等离子体侵入防止电子束导入孔，并用于将电子束导向基板的电子束 真空容器，以及用于防止等离子体侵入电子束导入管中。 在该结构中，假设等离子体的德拜长度设定为羔羊，并且将鞘的厚度设定为Sd，则电子束导入孔的直径D满足以下等式：D <= 2lambdad + 2Sd。

公开(公告)号：US20090233427A1

公开(公告)日：2009-09-17

申请号：US12158852

申请日：2007-11-13

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

IPC分类号： H01L21/265

CPC分类号： H01L21/2236

摘要： An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter.

摘要翻译： 通过将衬底暴露于由真空室中含有杂质的气体产生的等离子体，在衬底的表面中形成杂质区。 在该过程中，相对于要引入衬底的杂质的剂量设置等离子体掺杂条件，使得在衬底的中心部分和周边部分中的第一个剂量大于第二个 在掺杂的初始阶段期间的剂量，其中第二剂量变得大于其后的第一剂量。