公开(公告)号：US20080266654A1

公开(公告)日：2008-10-30

申请号：US11790681

申请日：2007-04-26

申请人： Vadim Yevgenyevich Banine ,  Arno Jan Bleeker ,  Vladimir Vitalevich Ivanov ,  Konstantin Nikolaevich Koshelev ,  Frank Jeroen Pieter Schuurmans ,  Vladimir Mihailovitch Krivtsun ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Arno Jan Bleeker ,  Vladimir Vitalevich Ivanov ,  Konstantin Nikolaevich Koshelev ,  Frank Jeroen Pieter Schuurmans ,  Vladimir Mihailovitch Krivtsun ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G02B21/00

CPC分类号： G21K7/00

摘要： An extreme ultraviolet (EUV) microscope configured to analyze a sample. The microscope includes a source of EUV radiation constructed and arranged to generate the EUV radiation with a wavelength at least in a range of about 2-6 nm, and an optical system constructed and arranged to illuminate the sample with the EUV radiation and to collect a radiation emanating from the sample. The optical system is arranged with at least one mirror that includes a multilayer structure for in-phase reflection of at least a portion of the radiation in the range of about 2-6 nm.

摘要翻译： 配置用于分析样品的极紫外（EUV）显微镜。 显微镜包括EUV辐射源，其被构造和布置成产生具有至少在约2-6nm范围内的波长的EUV辐射，以及构造和布置成用EUV辐射照射样品并收集一个 样品发出的辐射。 光学系统布置有至少一个反射镜，该反射镜包括多层结构，用于至少部分辐射在约2-6nm范围内的同相反射。

公开(公告)号：US08405051B2

公开(公告)日：2013-03-26

申请号：US12997149

申请日：2009-06-09

申请人： Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Martin Jacobus Johan Jak

发明人： Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Martin Jacobus Johan Jak

IPC分类号： G03F7/20

CPC分类号： G03F7/70925

摘要： A method for removal of a deposition on an uncapped multilayer mirror of an apparatus. The method includes providing a gas that includes one or more of H2, D2, and DH, and one or more additional compounds selected from hydrocarbon compounds and/or silane compounds in at least part of the apparatus; producing hydrogen and/or deuterium radicals and radicals of the one or more additional compounds, from the gas; and bringing the uncapped multilayer mirror with deposition into contact with at least part of the hydrogen and/or deuterium radicals and the radicals of the one or more additional compounds to remove at least part of the deposition.

摘要翻译： 一种用于去除装置的无盖多层反射镜上的沉积的方法。 该方法包括在装置的至少一部分中提供包括H2，D2和DH中的一种或多种的气体，以及选自烃化合物和/或硅烷化合物的一种或多种另外的化合物; 从气体产生氢和/或氘自由基和一种或多种另外的化合物的基团; 并且使具有沉积的未封盖的多层反射镜与至少部分氢和/或氘基和一种或多种另外的化合物的基团接触以除去至少部分沉积物。

公开(公告)号：US20100328639A1

公开(公告)日：2010-12-30

申请号：US12826459

申请日：2010-06-29

申请人： Martin Jacobus Johan Jak ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Denis Alexandrovich Glushkov ,  Andrei Mikhailovich Yakunin

发明人： Martin Jacobus Johan Jak ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Denis Alexandrovich Glushkov ,  Andrei Mikhailovich Yakunin

IPC分类号： G03B27/72 ,  G02B5/20 ,  B29D11/00

CPC分类号： G03B27/72 ,  G02B5/204 ,  G02B5/208 ,  G03F7/70191 ,  G03F7/70575

摘要： A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in carrier material such as silicon by an anisotropic etching process and topped with a reflective layer such as Mo metal, Ru metal, TiN or RuO. A diffusion barrier layer such as silicon nitride Si3N4, or silicon dioxide SiO2 is provided between the metal and the semiconductor to prevent diffusion and silicidation of the metal at elevated temperatures. The diffusion barrier layer may also serve as a hydrogen-resistant layer on parts of the semiconductor which are not beneath the reflective layer, and/or enhance emissivity for removal of heat from the structure.

摘要翻译： 透射光谱纯度滤光器被配置为透射极紫外辐射。 光谱纯度滤光器包括具有多个孔以便透射极紫外辐射并抑制第二类辐射的透射的滤光器部分。 孔可以通过各向异性蚀刻工艺在诸如硅的载体材料中制成，并且覆盖有诸如Mo金属，Ru金属，TiN或RuO的反射层。 在金属和半导体之间设置有诸如氮化硅Si 3 N 4或二氧化硅SiO 2的扩散阻挡层，以防止金属在升高的温度下扩散和硅化。 扩散阻挡层还可以在半导体的不在反射层下面的部分上用作耐氢层，和/或增加用于从结构去除热量的发射率。

公开(公告)号：US07724349B2

公开(公告)日：2010-05-25

申请号：US11797358

申请日：2007-05-02

申请人： Wouter Anthon Soer ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Niels Machiel Driessen ,  Vadim Yevgenyevich Banine ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Derek Jan Wilfred Klunder

发明人： Wouter Anthon Soer ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Niels Machiel Driessen ,  Vadim Yevgenyevich Banine ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Derek Jan Wilfred Klunder

IPC分类号： G03B27/42 ,  G03B27/54

CPC分类号： G03F7/70916 ,  G03F7/70558 ,  G03F7/7085

摘要： A device is arranged to measure a quantity relating to radiation. The device includes a sensor configured to measure the quantity, a screen arranged to protect the sensor from incoming particles emitted from a source configured to emit extreme ultraviolet radiation, and a mirror configured to redirect extreme ultraviolet radiation emitted by the source, past the screen, to the sensor.

摘要翻译： 一个装置被安排来测量与辐射有关的数量。 该装置包括被配置为测量该数量的传感器，布置成保护传感器免受从被配置为发射极紫外辐射的源射出的入射颗粒的屏幕，以及被配置为重定向由该源发射的超过紫外线的过滤器， 到传感器。

公开(公告)号：US09195144B2

公开(公告)日：2015-11-24

申请号：US13059057

申请日：2009-07-09

申请人： Martin Jacobus Johan Jak ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Andrei Mikhailovich Yakunin

发明人： Martin Jacobus Johan Jak ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Andrei Mikhailovich Yakunin

IPC分类号： G03B27/72 ,  G03F7/20 ,  G21K1/10

CPC分类号： G03F7/702 ,  G03F7/70191 ,  G03F7/70575 ,  G21K1/10

摘要： A spectral purity filter is configured to allow transmission therethrough of extreme ultraviolet (EUV) radiation and to refract or reflect non-EUV secondary radiation. The spectral purity filter may be part of a source module and/or a lithographic apparatus.

摘要翻译： 光谱纯度滤光器被配置为允许透射通过其中的极紫外（EUV）辐射并折射或反射非EUV次级辐射。 光谱纯度滤光片可以是源模块和/或光刻设备的一部分。

公开(公告)号：US08390788B2

公开(公告)日：2013-03-05

申请号：US12500198

申请日：2009-07-09

申请人： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Andrey Mikhailovich Yakunin ,  Martin Jacobus Johan Jak

发明人： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Andrey Mikhailovich Yakunin ,  Martin Jacobus Johan Jak

IPC分类号： G03B27/72 ,  G02B27/44

CPC分类号： G03F7/702 ,  G03F7/70191 ,  G03F7/70575 ,  G21K1/10

摘要： According to an aspect of the present invention, a spectral purity filter includes an aperture, the aperture being arranged to diffract a first wavelength of radiation and to allow at least a portion of a second wavelength of radiation to be transmitted through the aperture, the second wavelength of radiation being shorter than the first wavelength of radiation, wherein the aperture has a diameter greater than 20 μm.

公开(公告)号：US08242471B2

公开(公告)日：2012-08-14

申请号：US12431423

申请日：2009-04-28

申请人： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Tjarko Adriaan Rudolf Van Empel ,  Erik Roelof Loopstra ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Tjarko Adriaan Rudolf Van Empel ,  Erik Roelof Loopstra ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G01J3/10

CPC分类号： G03F7/70916 ,  G21K2201/064 ,  H05G2/005

摘要： A radiation source includes a radiation emitter configured to emit radiation, a collector configured to collect the radiation, and a contamination trap configured to trap contamination emitted by the radiation source. The contamination trap includes a plurality of foils that extend substantially radially, a first magnet ring configured to lie outside of an outer conical trajectory of radiation that is collected by the collector, and a second magnet ring configured to lie within the trajectory of radiation that is collected by the collector. The magnet rings are configured to provide a magnetic field that includes a component that is parallel to the foils.

摘要翻译： 辐射源包括被配置为发射辐射的辐射发射器，被配置为收集辐射的收集器以及被配置为捕获由辐射源发射的污染的污染阱。 污染物捕集器包括大致径向延伸的多个箔片，构造成位于由收集器收集的辐射的外锥形轨迹之外的第一磁环，以及构造成位于辐射轨迹内的第二磁环， 由收藏者收集。 磁环被配置成提供包括与箔片平行的部件的磁场。

公开(公告)号：US20110134405A1

公开(公告)日：2011-06-09

申请号：US12809427

申请日：2008-12-19

申请人： Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer

发明人： Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer

IPC分类号： G03B27/54 ,  H05B31/26 ,  H01J7/24

CPC分类号： H05G2/003 ,  H05G2/005

摘要： A radiation source is configured to generate radiation. The radiation source includes a first electrode and a second electrode configured to produce an electrical discharge during use to generate radiation-emitting plasma from a plasma fuel. The radiation source also includes a fuel supply configured to supply a plasma fuel to a fuel release area that is associated with the first electrode and the second electrode, and a fuel release configured to induce release of fuel, supplied by the fuel supply, from the fuel release area. The fuel release area is spaced-apart from the first electrode and from the second electrode.

摘要翻译： 辐射源被配置成产生辐射。 辐射源包括第一电极和第二电极，其被配置为在使用期间产生放电以从等离子体燃料产生辐射发射等离子体。 辐射源还包括配置成将等离子体燃料供应到与第一电极和第二电极相关联的燃料释放区域的燃料供应，以及燃料释放装置，其被配置为引起由燃料供应源供应的燃料的释放 燃油释放区。 燃料释放区域与第一电极和第二电极间隔开。

公开(公告)号：US20100259744A1

公开(公告)日：2010-10-14

申请号：US12680364

申请日：2008-09-26

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Wouter Anthon Soer

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Wouter Anthon Soer

IPC分类号： G03B27/72

CPC分类号： G21K1/10 ,  G02B5/203 ,  G03F7/70191 ,  G03F7/70575 ,  G21K1/06 ,  G21K2201/067

摘要： A lithographic spectral filter including a first filter element including a slit having an in plane length dimension arranged in a first direction; and a second filter element arranged at a subsequent position along an optical path of radiation of first and second wavelengths to the first filter element, the second filter element including a slit having an in plane length dimension arranged in a second direction transverse to the first direction, wherein the spectral filter is configured to reflect radiation of a first wavelength and allow transmission of radiation of a second wavelength, the first wavelength being larger than the second wavelength.

摘要翻译： 一种光刻频谱滤波器，包括：第一滤波器元件，包括具有沿第一方向布置的平面内长度尺寸的狭缝; 以及第二滤波器元件，其布置在沿着第一和第二波长的辐射的光路的后续位置处到所述第一滤波器元件，所述第二滤波器元件包括狭缝，所述狭缝具有沿横向于所述第一方向的第二方向布置的平面内长度尺寸 ，其中所述光谱滤光器被配置为反射第一波长的辐射并且允许第二波长的辐射的透射，所述第一波长大于所述第二波长。

公开(公告)号：US07771896B2

公开(公告)日：2010-08-10

申请号：US11643953

申请日：2006-12-22

申请人： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G03F1/00

CPC分类号： G03F7/70283 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/34 ,  G21K1/062 ,  G21K2201/067

摘要： A patterning device for a photolithographic apparatus is used to form a patterned radiation beam, by imparting a cross-sectional pattern to the radiation beam during reflection from the patterning device. The patterning device comprises a layer of phase-change material that is capable of locally undergoing an induced structural phase change into respective ones of a plurality of stable and/or metastable states. Furthermore, the patterning device comprises a radiation reflective structure with periodically arranged layers adjacent to the layer of phase-change material. The radiation reflective structures do not partake in the phase changes. By locally changing the phase of the phase-change material, the reflectivity of the whole structure is modified, for example due to thickness changes in the layer of phase-change material that lead to destructive interference of different components of the reflected light or due to changes in surface roughness of the radiation reflective structure.

摘要翻译： 用于光刻设备的图案形成装置用于通过在从图案形成装置反射期间将辐射束赋予横截面图案来形成图案化的辐射束。 图案形成装置包括相变材料层，其能够局部地经历诱导的结构相变到多个稳定和/或亚稳态中的相应的相变状态。 此外，图案形成装置包括具有与相变材料层相邻的周期性排列的层的辐射反射结构。 辐射反射结构不参与相位变化。 通过局部改变相变材料的相位，整个结构的反射率被改变，例如由于相变材料层中的厚度变化导致反射光的不同分量的破坏性干扰或由于 辐射反射结构的表面粗糙度变化。