公开(公告)号：US20060068260A1

公开(公告)日：2006-03-30

申请号：US10949216

申请日：2004-09-27

申请人： Yun-Yu Liu ,  Yu-Ming Lin

发明人： Yun-Yu Liu ,  Yu-Ming Lin

IPC分类号： H01M2/02

CPC分类号： H01M8/2475 ,  H01M8/241 ,  H01M8/2435

摘要： A structure of a fuel cell is provided. The fuel cell comprises a housing having a plurality of receiving containers mounted therein; and a plurality of reaction units, wherein one reaction unit is mounted in one receiving container respectively and has one electrode and the other electrode, one of the electrodes and one of the other electrodes are mounted protruding from the housing, and the remaining electrodes and the remaining other electrodes are coupled with one another sequentially such that a state of series connection is formed between the electrodes and the other electrodes.

摘要翻译： 提供燃料电池的结构。 燃料电池包括具有安装在其中的多个容纳容器的壳体; 以及多个反应单元，其中一个反应单元分别安装在一个接收容器中，并且具有一个电极，另一个电极，一个电极和一个其它电极从壳体突出地安装，剩余的电极和 剩余的其他电极依次相互耦合，使得在电极和其它电极之间形成串联连接的状态。

公开(公告)号：US06207132B1

公开(公告)日：2001-03-27

申请号：US09206126

申请日：1998-12-04

申请人： Yu-Ming Lin ,  Min-Hon Rei

发明人： Yu-Ming Lin ,  Min-Hon Rei

IPC分类号： C01B302

CPC分类号： B01D53/22 ,  B01D53/228 ,  B01D63/06 ,  B01D63/062 ,  B01D63/063 ,  B01D2313/42 ,  B01J8/009 ,  B01J8/0257 ,  B01J19/2475 ,  B01J2208/00309 ,  C01B3/323 ,  C01B3/501 ,  C01B3/505 ,  C01B2203/041 ,  C01B2203/047 ,  C01B2203/0475

摘要： An apparatus for producing hydrogen includes at least one reforming chamber containing a reforming catalyst bed for reforming a carbonaceous fuel into hydrogen, at least one hydrogen-permeable membrane tube disposed inside the reforming chamber to be surrounded by the reforming catalyst bed and to confine therein a hydrogen compartment, and at least one oxidation chamber provided adjacent to the reforming catalyst bed for burning the gas not permeable to the membrane tube and for supplying heat to the reforming chamber. The oxidation chamber has an oxidation catalyst bed. A process for producing hydrogen via the apparatus is also disclosed.

摘要翻译： 一种用于生产氢的装置包括至少一个重整室，其包含用于将含碳燃料重整为氢的重整催化剂床，至少一个氢转移膜管，设置在重整室内部以被重整催化剂床包围并限制在其中 氢室，以及与重整催化剂床相邻设置的至少一个氧化室，用于燃烧不能透过膜管的气体，并向重整室供热。 氧化室具有氧化催化剂床。 还公开了一种通过该装置生产氢气的方法。

公开(公告)号：US5740344A

公开(公告)日：1998-04-14

申请号：US598521

申请日：1996-02-08

申请人： Yu-Ming Lin ,  Chun-Kai Huang ,  Wei-Kuo Chia

发明人： Yu-Ming Lin ,  Chun-Kai Huang ,  Wei-Kuo Chia

IPC分类号： G06T11/00 ,  G06T11/40

CPC分类号： G06T11/001

摘要： A process and apparatus are disclosed for obtaining a texture color value C.sub.r for an object surface point from two texture color values C.sub.ri and C.sub.rj (which themselves may be interpolated texture color values), of texture data points C.sub.i and C.sub.j, respectively. The object surface point is a distance W from the texture data point C.sub.i and a distance 1-W from the object surface point C.sub.j, where W is an n-bit value. The process includes the steps of multiplying each of the texture colors C.sub.ri and C.sub.rj by each integer from 0 to 2.sup.n-1 to produce 2.sup.n -1 products for each color. The product of C.sub.ri with 2.sup.n-1 -W' and the product of C.sub.rj with W' are selected from these produced products, where W' is the rounded product of W and 2.sup.n-1. The two selected products are added together to produce the sum (2.sup.n-1 -W').multidot.C.sub.ri +W'.multidot.C.sub.rj, and the sum thus produced is divided by 2.sup.n-1 to produce the interpolated color. The apparatus for producing the interpolated color uses integer arithmetic for producing the texture color and can operate in a pipelined fashion.

摘要翻译： 公开了一种用于从纹理数据点Ci和Cj的两个纹理颜色值Cri和Crj（其本身可以是内插纹理颜色值）获得物体表面点的纹理颜色值Cr的处理和装置。 物体表面点是距离纹理数据点Ci的距离W和距物体表面点Cj的距离1-W，其中W是n位值。 该处理包括以下步骤：将每个纹理颜色Cri和Crj乘以0至2n-1的整数，以产生每种颜色的2n-1个乘积。 Cri与2n-1-W'的产物和Crj与W'的乘积选自这些产物，其中W'是W和2n-1的舍入积。 将两个选择的产品相加在一起以产生和（2n-1-W'）xCri + W'xCrj，并且将如此产生的和除以2n-1以产生内插颜色。 用于产生内插颜色的装置使用整数运算来产生纹理颜色并且可以以流水线方式操作。

公开(公告)号：US09405017B2

公开(公告)日：2016-08-02

申请号：US13611162

申请日：2012-09-12

申请人： Yu-Ming Lin ,  Jeng-Bang Yau

发明人： Yu-Ming Lin ,  Jeng-Bang Yau

IPC分类号： G01T1/24 ,  G01T1/02 ,  H01L31/119 ,  H01L29/16 ,  H01L31/18 ,  H01L51/00 ,  H01L51/42

CPC分类号： G01T1/026 ,  H01L29/1608 ,  H01L31/119 ,  H01L31/1804 ,  H01L51/0048 ,  H01L51/42

摘要： A method of forming a transistor comprises forming a conducting substrate layer, forming a dielectric layer over the conducting substrate layer, forming a channel over at least a portion of the dielectric layer and forming first and second source/drain regions contacting respective first and second portions of the channel. The channel comprises a thin-film carbon material. The conducting substrate layer, the dielectric layer, the channel and the first and second source/drain regions are formed such that exposure to radiation causes a change in a threshold voltage of the transistor.

摘要翻译： 一种形成晶体管的方法包括形成导电衬底层，在导电衬底层上形成电介质层，在电介质层的至少一部分上形成沟道，并形成与相应的第一和第二部分接触的第一和第二源/漏区 的频道。 该通道包括薄膜碳材料。 形成导电基底层，电介质层，沟道以及第一和第二源极/漏极区，使得暴露于辐射导致晶体管的阈值电压的变化。

公开(公告)号：US20150369925A1

公开(公告)日：2015-12-24

申请号：US13611162

申请日：2012-09-12

申请人： Yu-Ming Lin ,  Jeng-Bang Yau

发明人： Yu-Ming Lin ,  Jeng-Bang Yau

IPC分类号： G01T1/02 ,  H01L51/42 ,  H01L29/16 ,  H01L51/00 ,  H01L31/119 ,  H01L31/18

CPC分类号： G01T1/026 ,  H01L29/1608 ,  H01L31/119 ,  H01L31/1804 ,  H01L51/0048 ,  H01L51/42

摘要： A method of forming a transistor comprises forming a conducting substrate layer, forming a dielectric layer over the conducting substrate layer, forming a channel over at least a portion of the dielectric layer and forming first and second source/drain regions contacting respective first and second portions of the channel. The channel comprises a thin-film carbon material. The conducting substrate layer, the dielectric layer, the channel and the first and second source/drain regions are formed such that exposure to radiation causes a change in a threshold voltage of the transistor.

摘要翻译： 一种形成晶体管的方法包括形成导电衬底层，在导电衬底层上形成电介质层，在电介质层的至少一部分上形成沟道，并形成与相应的第一和第二部分接触的第一和第二源/漏区 的频道。 该通道包括薄膜碳材料。 形成导电基底层，电介质层，沟道以及第一和第二源极/漏极区，使得暴露于辐射导致晶体管的阈值电压的变化。

公开(公告)号：US08796668B2

公开(公告)日：2014-08-05

申请号：US12614724

申请日：2009-11-09

申请人： Yu-Ming Lin ,  Jeng-Bang Yau

发明人： Yu-Ming Lin ,  Jeng-Bang Yau

IPC分类号： H01L29/66 ,  H01L21/336

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  H01L27/124 ,  H01L29/0665 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78618 ,  H01L29/78684

摘要： An integrated circuit includes a graphene layer, the graphene layer comprising a region of undoped graphene, the undoped graphene comprising a channel of a transistor, and a region of doped graphene, the doped graphene comprising a contact of the transistor; and a gate of the transistor, the gate comprising a carbon nanotube film. A method of fabricating an integrated circuit comprising graphene and carbon nanotubes, includes forming a graphene layer; doping a portion of the graphene layer, resulting in doped graphene and undoped graphene; forming a carbon nanotube film; and etching the carbon nanotube film to form a gate of a transistor, wherein the transistor further comprises a channel comprising the undoped graphene and a contact comprising the doped graphene. A transistor includes a gate, the gate comprising a carbon nanotube film; a channel, the channel comprising undoped graphene; and a contact, the contact comprising doped graphene.

公开(公告)号：US08546246B2

公开(公告)日：2013-10-01

申请号：US13006081

申请日：2011-01-13

申请人： Yu-Ming Lin ,  Jeng-Bang Yau

发明人： Yu-Ming Lin ,  Jeng-Bang Yau

IPC分类号： H01L21/20

CPC分类号： H01L29/16 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684

摘要： Graphene- and/or carbon nanotube-based radiation-hard transistor devices and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating a radiation-hard transistor is provided. The method includes the following steps. A radiation-hard substrate is provided. A carbon-based material is formed on the substrate wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor. Contacts are formed to the portions of the carbon-based material that serve as the source and drain regions of the transistor. A gate dielectric is deposited over the portion of the carbon-based material that serves as the channel region of the transistor. A top-gate contact is formed on the gate dielectric.

公开(公告)号：US08445320B2

公开(公告)日：2013-05-21

申请号：US12783676

申请日：2010-05-20

申请人： Phaedon Avouris ,  Kuan-Neng Chen ,  Damon Farmer ,  Yu-Ming Lin

发明人： Phaedon Avouris ,  Kuan-Neng Chen ,  Damon Farmer ,  Yu-Ming Lin

IPC分类号： H01L21/00

CPC分类号： H01L21/50 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1207 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/7781 ,  H01L29/78618 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

摘要： Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel.

摘要翻译： 提供了基于石墨烯基通道的器件及其制造技术。 在一个方面，一种半导体器件包括：第一晶片，其具有形成在第一衬底上的至少一个石墨烯通道;围绕石墨烯通道的第一氧化物层;延伸穿过第一氧化物层的石墨烯通道的源极和漏极接触; 以及第二晶片，其具有形成在第二基板中的CMOS器件层，围绕所述CMOS器件层的第二氧化物层和延伸穿过所述第二氧化物层的所述CMOS器件层的多个触点，所述晶片通过 氧化物层之间的氧化物 - 氧化物键。 与CMOS器件层的一个或多个触点与源极和漏极触点接触。 CMOS器件层的一个或多个其它触点是用于石墨烯通道的栅极触点。

公开(公告)号：US08053782B2

公开(公告)日：2011-11-08

申请号：US12546097

申请日：2009-08-24

申请人： Phaedon Avouris ,  Yu-Ming Lin ,  Thomas Mueller ,  Fengnian Xia

发明人： Phaedon Avouris ,  Yu-Ming Lin ,  Thomas Mueller ,  Fengnian Xia

IPC分类号： H01L29/15

CPC分类号： H01L51/428 ,  H01L29/1606 ,  H01L31/02327 ,  H01L31/035209 ,  H01L31/101 ,  Y02E10/549

摘要： A photodetector which uses single or multi-layer graphene as the photon detecting layer is disclosed. Multiple embodiments are disclosed with different configurations of electrodes. In addition, a photodetector array comprising multiple photodetecting elements is disclosed for applications such as imaging and monitoring.

摘要翻译： 公开了使用单层或多层石墨烯作为光子检测层的光电探测器。 公开了具有不同配置的电极的多个实施例。 此外，公开了包括多个光电检测元件的光电探测器阵列，用于诸如成像和监视的应用。

公开(公告)号：US20110114919A1

公开(公告)日：2011-05-19

申请号：US12617770

申请日：2009-11-13

申请人： Keith A. Jenkins ,  Yu-Ming Lin ,  Alberto Valdes-Garcia

发明人： Keith A. Jenkins ,  Yu-Ming Lin ,  Alberto Valdes-Garcia

IPC分类号： H01L29/16 ,  H01L21/04

CPC分类号： H01L29/78684

摘要： A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.

摘要翻译： 石墨烯场效应晶体管包括栅极堆叠，栅极堆叠包括种子层，形成在种子层上的栅极氧化物和形成在栅极氧化物上的栅极金属; 绝缘层; 以及在种子层和绝缘层之间移动的石墨烯片。