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    Infrared photoemitting diode having reduced work function
    61.
    发明授权
    Infrared photoemitting diode having reduced work function 失效
    具有降低功函数的红外发光二极管

    公开(公告)号：US4464572A

    公开(公告)日：1984-08-07

    申请号：US375518

    申请日：1982-05-06

    Applicant: Tomas B. Hirschfeld

    Inventor： Tomas B. Hirschfeld

    IPC: G01J5/28 ,  H01J40/00 ,  G01J1/00

    CPC classification number: H01J40/00 ,  G01J5/28

    Abstract: In electro-optical detectors which include as elements a photoemitting photocathode and anode, a photoemitting diode is fabricated which lowers the diode's work function, thus reducing the cooling requirement typically needed for this type of device. The work function is reduced by sandwiching between the photocathode and anode a liquid medium of the formula NR.sub.3 and having an electron affinity for the electrons of the photocathode, which liquid medium permits free electrons leaving the photocathode to remain as stable solvated species in the liquid medium. Thus, highly light-absorbent, and therefore thin, metallic layers can be used for detection, thereby reducing dark current at a given temperature, with a consequent reduction in cooling requirements at constant detector performance.

    Abstract translation: 在包含光敏光电阴极和阳极的元件的电光检测器中，制造了一种降低二极管功函数的发光二极管，从而降低了这种器件通常需要的冷却要求。 通过在光电阴极和阳极之间夹住式NR3的液体介质并且对光电阴极的电子具有电子亲和力来降低功函数，该液体介质允许离开光电阴极的自由电子在液体介质中保持为稳定的溶剂化物质 。 因此，可以使用高度吸收光的薄金属层进行检测，从而降低给定温度下的暗电流，从而降低了恒定探测器性能下的冷却要求。

    Cryogenic radiation detector with high-density conductor array
    62.
    发明授权
    Cryogenic radiation detector with high-density conductor array 失效
    具有高密度导体阵列的低温辐射探测器

    公开(公告)号：US4451735A

    公开(公告)日：1984-05-29

    申请号：US347035

    申请日：1982-02-08

    Applicant: Heinz K. Diedrich ,  Giovanni Greco ,  Domenico Fanti

    Inventor： Heinz K. Diedrich ,  Giovanni Greco ,  Domenico Fanti

    IPC: G01J5/28 ,  H01B17/30 ,  H01L31/02 ,  H01L31/0203 ,  G01J5/02

    CPC classification number: G01J5/28 ,  H01B17/30 ,  H01L31/02002 ,  H01L31/0203

    Abstract: A detector for infrared radiation, having a multicell photosensor disposed at the top of a cold finger in an evacuated container, comprises a stack of annular ceramic layers coaxially surrounding the cold finger and serving as supports for several arrays of radially extending metallic strips screen-printed on respective layers in angularly offset relationship. The metallic strips are conductively connected to respective cells of the sensor to serve as output leads thereof. The conductive connections include axially extending metal pins spacedly surrounding the cold finger while being linked with the sensor cells by short, thin wires spanning an intervening annular gap.

    Abstract translation: 用于红外辐射的检测器，具有设置在真空容器中的冷指状物顶部的多细胞光电传感器，包括同时围绕冷指状物并且用作多个阵列的径向延伸的金属条丝网印刷的支撑体 在各个层上以角度偏移关系。 金属带导电地连接到传感器的各个电池单元以作为其输出引线。 导电连接包括轴向延伸的金属销，其间隔围地围绕冷手指，同时通过跨越中间环形间隙的短细线连接传感器单元。

    Photodetector mounting and connecting
    63.
    发明授权
    Photodetector mounting and connecting 失效
    光电检测器安装和连接

    公开(公告)号：US4104789A

    公开(公告)日：1978-08-08

    申请号：US741573

    申请日：1976-11-15

    Applicant: Gene A. Robillard

    Inventor： Gene A. Robillard

    IPC: G01J5/28 ,  H01L31/0203 ,  H05K5/06 ,  H01R43/00

    CPC classification number: H05K5/06 ,  G01J5/28 ,  H01L31/0203 ,  Y10T29/49169

    Abstract: An improved method for providing electrical connection to a photodetector in a Dewar flask is disclosed. A plurality of conductive paths are formed on the inner flask of the Dewar. Each of the conductive paths extends from the side surface on to the top surface of the inner flask. A photodetector having lead tabs is mounted to the top surface of the inner flask with the lead tabs aligned with the conductive paths. The lead tabs are bonded to the conductive paths to provide electrical connection to the photodetector.

    Abstract translation: 公开了一种用于提供与杜瓦瓶中的光电检测器的电连接的改进方法。 在杜瓦的内烧瓶上形成多个导电路径。 每个导电路径从内侧烧瓶的侧表面延伸到顶部表面。 具有引线片的光电检测器安装在内烧瓶的顶表面上，引线片与导电路径对准。 导线片接合到导电路径上以提供与光电检测器的电连接。

    Electron beam bolometer
    64.
    发明授权
    Electron beam bolometer 失效
    电子光束测温仪

    公开(公告)号：US3641353A

    公开(公告)日：1972-02-08

    申请号：US3641353D

    申请日：1970-08-17

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： MCNALLY FRANCIS X ,  CHIOSI LOUIS

    IPC: G01J5/28 ,  H01J29/45 ,  H01J31/50

    CPC classification number: G01J5/28 ,  H01J29/458

    Abstract: A bolometer which operates at room temperature and which can be made sensitive to all blackbody radiation in the visible spectrum and extending into the infrared, depending upon the nature of a faceplate used. The bolometer is constructed by sandwiching a suitable semiconductor in smoke form between gold black as one electrode and a flooding electron beam as the other, the sensing layer being mounted in a vacuum tube.

    Abstract translation: 一种在室温下工作的测辐射热量计，可根据使用的面板的性质对可见光谱中的所有黑体辐射敏感并延伸到红外线。 测辐射热谱仪是通过将作为一个电极的金黑和作为另一个的淹没电子束之间的烟雾形式的合适的半导体夹在一起构成的，感测层安装在真空管中。

    Infrared detecting materials
    65.
    发明授权
    Infrared detecting materials 失效
    红外检测材料

    公开(公告)号：US3630693A

    公开(公告)日：1971-12-28

    申请号：US3630693D

    申请日：1970-04-06

    Applicant: AVCO CORP

    Inventor： MOODY JERRY W ,  REID FRANCIS J

    IPC: C30B19/06 ,  G01J5/28 ,  B32B15/00

    CPC classification number: C30B19/062 ,  G01J5/28 ,  Y10T428/12528 ,  Y10T428/12681

    Abstract: Infrared detector material is formed by the epitaxial growth of a single crystal alloy of the two III-V compounds InAs and InSb on an InAs substrate. In the method of such growth, a liquid solution is prepared with excess indium solvent, InSb, and sufficient InAs to saturate the indium at 500* C. The InAs substrate, oriented in the III direction is immersed in the solution, and the substrate and the solution are brought to equilibrium at approximately 500* C. Slowly lowering the solution temperature causes a single crystal to be epitaxially grown on the substrate as a solid homogeneous InAs-InSb solution. Composition of the crystal is a function of solution composition and may be controlled by dissolving selected quantities of InSb in the solution.

    Infrared detecting materials,methods of preparing them,and intermediates
    66.
    发明授权
    Infrared detecting materials,methods of preparing them,and intermediates 失效
    红外检测材料，其制备方法和中间体

    公开(公告)号：US3558373A

    公开(公告)日：1971-01-26

    申请号：US3558373D

    申请日：1968-06-05

    Applicant: AVCO CORP

    Inventor： MOODY JERRY W ,  REID FRANCIS J

    IPC: C30B19/06 ,  G01J5/28 ,  H01L7/38

    CPC classification number: C30B19/062 ,  G01J5/28 ,  Y10S148/003 ,  Y10S148/065 ,  Y10S148/107 ,  Y10S420/903

    Abstract: INFRARED DETECTOR MATERIAL IS FORMED BY THE EPITAXIAL GROWTH OF A SINGLE CRYSTAL ALLOY OF THE TWO III-V COMPOUNDS INAS AND INSB ON AN INAS SUBSTRATE. IN THE METHOD OF SUCH GROWTH , A LIQUID SOLUTION IS PREPARED WITH EXCESS INDIUM SOLVENT, INSB, AND SUFFICIENT INAS TO SATURATE THE INDIUM AT 500*C. THE INAS SUBSTRATE, ORIENTED IN THE (III) DIRECTION IS IMMERSED IN THE SOLUTION, AND THE SUBSTRATE AND THE SOLUTION ARE BROUGHT TO EQUILBRIUM AT APPROXIMATELY 500*C. SLOWLY LOWERING THE SOLUTION TEMPERATURE CAUSES A SINGLE CRYSTAL TO BE EPITAXIALLY GROWN ON THE SUBSTRATE AS A SOLID HOMOGENEOUS INAS-INSB SOLUTION. COMPOSITION OF THE CRYSTAL IS A FUNCTION OF SOLUTION COMPOSITION AND MAY BE CONTROLLED BY DISSOLVING SELECTED QUANTITIES OF INSB IN THE SOLUTION.

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