公开(公告)号：US09129635B2

公开(公告)日：2015-09-08

申请号：US13799078

申请日：2013-03-13

申请人： HITACHI, LTD.

发明人： Hiroshi Fukuda ,  Yoshihiro Shiroishi

IPC分类号： G11B5/127 ,  G11B5/66 ,  G11B5/78 ,  G11B5/00

CPC分类号： G11B5/78 ,  G11B5/66 ,  G11B2005/0024

摘要： There are provided a magnetic recording medium and a magnetic memory device capable of implementing high recording density, in the case of using a microwave assisted magnetic recording (MAMR) scheme. In a magnetic memory device including a magnetic recording medium having a recording film with three or more layers, a recording magnetic pole generating a recording magnetic field, an opposed magnetic pole, a high frequency magnetic field generating element generating a microwave for recording assist, and a magnetic reproduction element, an anisotropic field of a first layer which is a top layer of the recording film is larger than 20 kOe.

摘要翻译： 在使用微波辅助磁记录（MAMR）方案的情况下，提供了能够实现高记录密度的磁记录介质和磁存储装置。 在包括具有三层或多层记录膜的磁记录介质的磁存储器件中，产生记录磁场的记录磁极，相对磁极，产生用于记录辅助的微波的高频磁场产生元件，以及 磁性再现元件，作为记录膜的顶层的第一层的各向异性磁场大于20kOe。

公开(公告)号：US09093101B2

公开(公告)日：2015-07-28

申请号：US13037288

申请日：2011-02-28

申请人： Jai-Young Kim ,  Thomas P. Nolan ,  Kyongha Kang ,  Shoutao Wang ,  Vincent D. Nguyen ,  Abebe Hailu ,  Charles C. Chen

发明人： Jai-Young Kim ,  Thomas P. Nolan ,  Kyongha Kang ,  Shoutao Wang ,  Vincent D. Nguyen ,  Abebe Hailu ,  Charles C. Chen

IPC分类号： G11B5/66 ,  G11B5/82 ,  G11B5/73

CPC分类号： G11B5/82 ,  G11B5/66 ,  G11B5/7325 ,  G11B5/851

摘要： A stack including a crystallographic orientation interlayer, a magnetic zero layer disposed on the interlayer, and a magnetic recording layer disposed on the magnetic zero layer is disclosed. The magnetic zero layer is non-magnetic or has a saturation magnetic flux density (Bs) less than about 100 emu/cc. The magnetic zero layer and the magnetic layer include grains surrounded by a non-magnetic segregant. The magnetic zero layer provides a coherent interface between the interlayer and the magnetic layer with a lattice mismatch less than about 4%.

摘要翻译： 公开了一种包括晶体取向中间层，设置在中间层上的磁性零层和设置在磁性零层上的磁记录层的堆叠。 磁性零层是非磁性的或具有小于约100emu / cc的饱和磁通密度（Bs）。 磁性零层和磁性层包括由非磁性分离器包围的晶粒。 磁性零层在中间层和磁性层之间提供具有小于约4％的晶格失配的相干界面。

公开(公告)号：US09082444B2

公开(公告)日：2015-07-14

申请号：US12593243

申请日：2008-03-28

申请人： Shinichi Ishibashi ,  Akira Shimada

发明人： Shinichi Ishibashi ,  Akira Shimada

IPC分类号： G11B5/65 ,  G11B5/855 ,  B82Y10/00 ,  G11B5/74 ,  G11B5/82 ,  G11B5/66

CPC分类号： G11B5/855 ,  B82Y10/00 ,  G11B5/66 ,  G11B5/743 ,  G11B5/82

摘要： [PROBLEMS] To appropriately form a DTR medium, a patterned medium, or the like in a manner less likely to cause the problems of prolonged process time and increased cost.[MEANS FOR SOLVING PROBLEMS] A perpendicular magnetic recording layer 22 has a plurality of tracks 102 which define recording regions extending in a scanning direction of a magnetic head and which are arranged in parallel in a direction intersecting with the scanning direction. The perpendicular magnetic recording layer 22 has a guard band region 104 formed on its surface and provided with a groove portion 202 which extends along the tracks 102. In a cross-section of the perpendicular magnetic recording layer 22 taken along a plane perpendicular to the scanning direction, the maximum depth D of the groove portion 202 is in the range of 0.5 to 10 nm with reference to an average height (broken line 302) of the tracks 102 between which the groove portion 202 is interposed. The average height is obtained in the vicinity of the centers of the tracks 102 in a widthwise direction. The width W of a region of the groove portion 202 having a depth equal to or greater than ½ of the maximum depth is in the range of 5 to 30% of a track pitch.

摘要翻译： [问题]以不太可能引起长时间处理和增加成本的问题的方式适当地形成DTR介质，图案化介质等。 用于解决问题的手段垂直磁记录层22具有多个轨道102，其限定在磁头的扫描方向上延伸并且沿与扫描方向相交的方向平行设置的记录区域。 垂直磁记录层22具有在其表面上形成的保护带区域104，并且设置有沿着轨道102延伸的槽部分202.在沿着与扫描垂直的平面截取的垂直磁记录层22的横截面中 方向上，凹槽部分202的最大深度D相对于插入凹槽部分202的轨道102的平均高度（虚线302）在0.5至10nm的范围内。 在轨道102的宽度方向的中心附近获得平均高度。 具有等于​​或大于最大深度的1/2的深度的槽部分202的区域的宽度W在轨道间距的5至30％的范围内。

公开(公告)号：US09076479B2

公开(公告)日：2015-07-07

申请号：US13965140

申请日：2013-08-12

申请人： FUJI ELECTRIC CO., LTD.

发明人： Tomonori Katano ,  Akiyasu Kumagai ,  Katsumi Taniguchi ,  Hiromi Ono ,  Narumi Sato ,  Shinji Uchida

IPC分类号： G11B5/66 ,  G11B5/725 ,  G11B5/72 ,  G11B5/84

CPC分类号： G11B5/725 ,  G11B5/72 ,  G11B5/82 ,  G11B5/8408

摘要： A magnetic recording medium includes a substrate having sequentially formed thereon (a) a magnetic layer; (b) a protective layer having a thickness ranging from 1.0 nm to 2.5 nm and being composed of an amorphous metal layer having a thickness of at least 0.3 nm, the amorphous metal layer being composed of a metal selected from the group consisting of Si, Al, Ge, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W that is in an amorphous state; (c) a carbon layer formed on the amorphous metal layer and having a thickness of at least 0.3 nm, the carbon layer including amorphous carbon; and (d) a lubricating layer, wherein the carbon layer includes nitrogen atoms in a surface thereof in which a ratio of number of nitrogen atoms to total number of carbon atoms, nitrogen atoms, and oxygen atoms is 14 atomic % or less.

摘要翻译： 磁记录介质包括其上顺序形成的基板（a）磁性层; （b）厚度为1.0nm〜2.5nm的保护层，由厚度为0.3nm以下的非晶质金属层构成，所述无定形金属层由选自Si， Al，Ge，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo和W; （c）形成在所述非晶态金属层上并具有至少0.3nm的厚度的碳层，所述碳层包括无定形碳; 和（d）润滑层，其中，碳层在其表面含有氮原子数与碳原子数，氮原子数和氧原子的比率为14原子％以下的氮原子。

公开(公告)号：US09053733B2

公开(公告)日：2015-06-09

申请号：US13863119

申请日：2013-04-15

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroyuki Hieda

IPC分类号： G11B5/66 ,  G11B5/70 ,  B82Y10/00 ,  G11B5/596 ,  G11B5/74 ,  G11B5/82 ,  G11B5/855

CPC分类号： G11B5/70 ,  B82Y10/00 ,  G11B5/59655 ,  G11B5/66 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855

摘要： According to one embodiment, a magnetic recording medium includes a data region and a servo region adjacent to the data region and including a magnetic recording layer, the magnetic recording layer including first and second patterned regions adjacent to each other, the first patterned region including a first nonmagnetic matrix and first magnetic particles dispersed in the first nonmagnetic matrix and having magnetization oriented in a first direction, the second patterned region includes a second nonmagnetic matrix and second magnetic particles dispersed in the second nonmagnetic matrix and having magnetization oriented in a second direction opposite to the first direction, sizes of the first magnetic particles being smaller than sizes of the second magnetic particles.

摘要翻译： 根据一个实施例，磁记录介质包括与数据区相邻并包括磁记录层的数据区和伺服区，磁记录层包括彼此相邻的第一和第二图案区，第一图案区包括 第一非磁性基质和第一磁性颗粒分散在第一非磁性基质中并且具有沿第一方向取向的磁化，第二图案化区域包括分散在第二非磁性矩阵中的第二非磁性基质和第二磁性颗粒，并且在相反的第二方向上具有磁化方向 朝向第一方向，第一磁性颗粒的尺寸小于第二磁性颗粒的尺寸。

公开(公告)号：US20150124350A1

公开(公告)日：2015-05-07

申请号：US14070408

申请日：2013-11-01

申请人： HGST Netherlands B.V.

发明人： Hoa V. Do ,  Sylvia H. Florez ,  Yoshihiro Ikeda ,  Kentaro Takano ,  Bruce D. Terris ,  Qing Zhu

IPC分类号： G11B5/66

CPC分类号： G11B5/66

摘要： In one general embodiment, a magnetic medium includes a recording layer having at least three exchange control layers each having a magnetic moment less than 100 emu/cc, and four magnetic layers separated from one another by the exchange control layers. An uppermost of the magnetic layers is doped with oxygen. In another general embodiment, a magnetic medium includes a recording layer having at least three exchange control layers and four magnetic layers separated from one another by the exchange control layers. An uppermost of the magnetic layers has an oxygen content of greater than 0.5 vol %. An average pitch of magnetic grains in a lowermost of the magnetic layers is 9 nm or less. A lowermost of the magnetic layers has an oxide content of at least 20 vol %.

摘要翻译： 在一个一般实施例中，磁介质包括具有至少三个具有小于100emu / cc的磁矩的交换控制层的记录层，以及由交换控制层彼此分开的四个磁性层。 最上面的磁性层被氧掺杂。 在另一个一般实施例中，磁介质包括具有至少三个交换控制层的记录层和由交换控制层彼此分开的四个磁性层。 最上面的磁性层的氧含量大于0.5体积％。 最下面的磁性层的磁性粒子的平均间距为9nm以下。 最下层的磁性层的氧化物含量至少为20体积％。

公开(公告)号：US20150103440A1

公开(公告)日：2015-04-16

申请号：US14500261

申请日：2014-09-29

申请人： Kabushiki Kaisha Toshiba

发明人： Soichi OIKAWA

IPC分类号： G11B5/66

CPC分类号： G11B5/66 ,  G11B5/65 ,  G11B5/7325

摘要： According to one embodiment, a perpendicular magnetic recording medium includes an underlayer in which the width of the grain boundary between crystal grains is less than 0.5 nm, and a multilayered magnetic recording layer formed in contact with the underlayer by alternately stacking at least two magnetic layers and two nonmagnetic layers, which are sequentially provided on a substrate. Each of the magnetic layers is a magnetically continuous layer. The magnetic layer includes magnetic crystal grains mainly containing Co, and a plurality of pinning sites made of an oxide dispersed in the entire magnetic layer. The perpendicular magnetic recording medium has a magnetic characteristic having a magnetization curve with a slope α of 5 or more near the coercive force.

摘要翻译： 根据一个实施例，垂直磁记录介质包括其中晶粒之间的晶界的宽度小于0.5nm的底层和通过交替堆叠至少两个磁性层而与底层接触形成的多层磁记录层 和两个非磁性层，其顺序地设置在基板上。 每个磁性层是磁性连续的层。 磁性层包括主要含有Co的磁性晶粒和由分散在整个磁性层中的氧化物形成的多个钉扎位置。 垂直磁记录介质具有在矫顽力附近具有斜率α为5以上的磁化曲线的磁特性。

公开(公告)号：US09005699B2

公开(公告)日：2015-04-14

申请号：US11862410

申请日：2007-09-27

申请人： Yoshiaki Sonobe ,  Teiichiro Umezawa ,  Koichi Wago

发明人： Yoshiaki Sonobe ,  Teiichiro Umezawa ,  Koichi Wago

IPC分类号： B05D5/12 ,  G11B5/66 ,  G11B5/84 ,  G11B5/74 ,  G11B23/00 ,  G11B7/20

CPC分类号： G11B5/66 ,  G11B5/84

摘要： A method for manufacturing a magnetic recording medium includes the steps of (a) forming a perpendicular magnetic recording layer and (b) applying an ion beam to regions between tracks of the perpendicular magnetic recording layer so as to form separation regions for magnetically separating the tracks from each other. In the step (a), a continuous film layer composed of a multilayer film is formed, and CoB layers and Pd layers are laminated in the multilayer film. In the step (b), the CoB layers and the Pd layers are melted by the ion beam so as to form an alloy of metals contained in the CoB layers and the Pd layers to thereby form the separation regions.

摘要翻译： 一种制造磁记录介质的方法包括以下步骤：（a）形成垂直磁记录层，和（b）将离子束施加到垂直磁记录层的轨道之间的区域，以便形成用于磁分离轨道的分离区域 从彼此。 在步骤（a）中，形成由多层膜构成的连续膜层，并且在多层膜中层叠CoB层和Pd层。 在步骤（b）中，CoB层和Pd层通过离子束熔化，以形成CoB层和Pd层中所含的金属的合金，从而形成分离区域。

公开(公告)号：US08920947B2

公开(公告)日：2014-12-30

申请号：US12802091

申请日：2010-05-28

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： G11B5/39 ,  G01R33/06 ,  G11B5/84 ,  G01R33/09 ,  G11B5/66 ,  G11B5/73 ,  G11C11/16 ,  G11B5/00

CPC分类号： G11B5/84 ,  G01R33/098 ,  G11B5/3932 ,  G11B5/66 ,  G11B5/732 ,  G11B5/7325 ,  G11B2005/0024 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1114

摘要： Perpendicular magnetic anisotropy and Hc are enhanced in magnetic devices with a Ta/M1/M2 seed layer where M1 is preferably Ti, and M2 is preferably Cu, and including an overlying (Co/Ni)X multilayer (x is 5 to 50) that is deposited with ultra high Ar pressure of >100 sccm to minimize impinging energy that could damage (Co/Ni)X interfaces. In one embodiment, the seed layer is subjected to one or both of a low power plasma treatment and natural oxidation process to form a more uniform interface with the (Co/Ni)X multilayer. Furthermore, an oxygen surfactant layer may be formed at one or more interfaces between adjoining (Co/Ni)X layers in the multilayer stack. Annealing at temperatures between 180° C. and 400° C. also increases Hc but the upper limit depends on whether the magnetic device is MAMR, MRAM, a hard bias structure, or a perpendicular magnetic medium.

摘要翻译： 在具有Ta优选为Ti的Ta / M1 / M2种子层的磁性装置中，垂直磁各向异性和Hc增强，并且M2优选为Cu，并且包括覆盖（Co / Ni）X多层（x为5至50）， 以超过100 sccm的超高Ar压力沉积，以尽量减少可能损坏（Co / Ni）X界面的冲击能量。 在一个实施方案中，种子层经受低功率等离子体处理和天然氧化过程中的一种或两种以与（Co / Ni）X多层形成更均匀的界面。 此外，可以在多层叠层中的相邻（Co / Ni）X层之间的一个或多个界面处形成氧表面活性剂层。 在180°C至400°C的温度下退火也会增加Hc，但上限取决于磁性装置是MAMR，MRAM，硬偏压结构还是垂直磁介质。

公开(公告)号：US08908424B2

公开(公告)日：2014-12-09

申请号：US13630060

申请日：2012-09-28

申请人： Xiangrong Wang ,  Peng Yan ,  Xiansi Wang

发明人： Xiangrong Wang ,  Peng Yan ,  Xiansi Wang

IPC分类号： G11C11/00 ,  G11C11/14 ,  H01L29/82 ,  H01L29/66 ,  G11B5/66 ,  G11B5/02 ,  G11B5/00

CPC分类号： H01L29/66984 ,  G11B5/02 ,  G11B5/66 ,  G11B2005/0002 ,  H01L29/82 ,  H01L43/00

摘要： The subject application describes systems and methods that drive magnetization switching through magnonic spin transfer torque. A spin current is provided to a first magnetic layer with a first magnetic state. The spin current facilitates magnetization switching via a magnonic spin transfer torque in a second magnetic layer with a second magnetic state that is separated from the first magnetic layer by an interface. Alternatively, a spin current is provided to a first magnetic domain with a first magnetic state. The spin current facilitates domain wall propagation via a magnonic spin transfer torque. The domain wall is between the first magnetic domain and a second magnetic domain in a second magnetic state.

摘要翻译： 主题应用描述了通过磁自旋转移转矩驱动磁化切换的系统和方法。 自旋电流被提供给具有第一磁状态的第一磁性层。 自旋电流有助于通过具有第二磁状态的第二磁性层中的电磁自旋转移转矩进行磁化转换，第二磁性状态通过界面与第一磁性层分离。 或者，自旋电流被提供给具有第一磁状态的第一磁畴。 自旋电流有助于通过电磁自旋转移转矩进行畴壁传播。 畴壁位于第一磁畴和第二磁畴之间的第二磁畴中。