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公开(公告)号：US11523081B2
公开(公告)日：2022-12-06
申请号：US17002973
申请日：2020-08-26
发明人： Hisayuki Taruki
IPC分类号： H04N5/3745 , H01L27/146 , H04N5/376 , H04N5/378 , H01L27/148
摘要： A solid-state imaging device includes a plurality of pixel cells, each of the pixel cells including a light receiving element, a floating diffusion, a first source follower circuit, and a second source follower circuit. The plurality of pixel cells are connected to an output signal line. The light receiving element photoelectrically converts incident light, and stores a signal charge. The floating diffusion converts the signal charge read out of the light receiving element into a signal voltage. The first source follower circuit is connected to the floating diffusion, and outputs an output voltage corresponding to the signal voltage. The second source follower circuit is connected in series with the first source follower circuit, and outputs a pixel signal corresponding to the output voltage.
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公开(公告)号：US11523079B2
公开(公告)日：2022-12-06
申请号：US17287823
申请日：2019-10-15
发明人： Atsumi Niwa
IPC分类号： H04N5/374 , H04N5/355 , H01L27/146 , H01L27/115 , H03M1/00 , H04N5/3745
摘要： To shorten time required for AD conversion when a solid-state imaging element that detects presence or absence of an address event further captures image data.
In a detection block, a first pixel that generates a first analog signal by photoelectric conversion and a second pixel that generates a second analog signal by photoelectric conversion are arrayed. A first analog-digital converter converts the first analog signal into a digital signal on the basis of whether or not a change amount of an incident light amount of the detection block exceeds a predetermined threshold. A second analog-digital converter converts the second analog signal into a digital signal on the basis of whether or not the change amount exceeds the threshold.-
63.发明授权公开(公告)号：US11521996B2
公开(公告)日：2022-12-06
申请号：US17257448
申请日：2019-07-10
发明人： Takayuki Ikeda
IPC分类号： H01L27/146 , H04N5/378 , H04N5/3745
摘要： An imaging panel is provided. The imaging panel includes a photoelectric conversion element, a pixel, a first conductive film, a second conductive film, a third conductive film, a fourth conductive film, and a fifth conductive film. The pixel includes a pixel circuit and supplies an image signal. The first conductive film is supplied with the image signal and the photoelectric conversion element includes a first terminal connected to the second conductive film and a second terminal connected to the pixel circuit. The pixel circuit includes a first switch, a second switch, a third switch, a transistor, and a capacitor. The first switch includes a terminal connected to the second terminal of the photoelectric conversion element and a terminal connected to a node. The transistor includes a gate electrode connected to the node and a first electrode connected to the third conductive film. The second switch includes a terminal connected to a second electrode of the transistor and a terminal connected to the first conductive film. The third switch includes a terminal connected to the fourth conductive film and a terminal connected to the node. The capacitor includes a first electrode connected to the node and a second electrode connected to the fifth conductive film.
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公开(公告)号：US20220384494A1
公开(公告)日：2022-12-01
申请号：US17816135
申请日：2022-07-29
发明人： Kazuhiro Morimoto
IPC分类号： H01L27/146 , H04N5/3745
摘要： A first avalanche diode including a first semiconductor region and a second avalanche diode including a second semiconductor region are provided, a first isolation portion is arranged between the first semiconductor region and the second semiconductor region, the first isolation portion is constituted by a third semiconductor region, or a fourth semiconductor regions and the third semiconductor regions arranged to sandwich the fourth semiconductor region in plan view, and in the fourth semiconductor regions, an impurity concentration Nd of the third semiconductor region, an impurity concentration Na of the fourth semiconductor region, an elementary electric charge q, a dielectric constant ε of a semiconductor, a potential difference V between a P-N junction of the third semiconductor region and the fourth semiconductor region, and a length D of the third semiconductor region sandwiched by the fourth semiconductor regions satisfy Expression 1. 2 × 2 ε Nd V q Na ( Na + Nd ) > D
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公开(公告)号：US11516422B2
公开(公告)日：2022-11-29
申请号：US17058535
申请日：2019-05-24
发明人： Jiaju Ma , Saleh Masoodian
IPC分类号： H04N5/378 , H04N5/355 , H04N5/357 , H04N5/363 , H04N5/3745 , H01L27/146
摘要： Correlated double sampling column-level readout of an image sensor pixel may be provided by a charge transfer amplifier that is configured and operated to itself provide for both correlated-double-sampling and amplification of floating diffusion potentials read out from the pixel onto a column bus after reset of the floating diffusion (I) but before transferring photocharge to the floating diffusion (the reset potential) and (ii) after transferring photocharge to the floating diffusion (the transfer potential). A common capacitor of the charge transfer amplifier may sample both the reset potential and the transfer potential such that a change in potential (and corresponding charge change) on the capacitor represents the difference between the transfer potential and reset potential, and the magnitude of this change is amplified by the charge change being transferred between the common capacitor and a second capacitor selectively coupled to the common capacitor.
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公开(公告)号：US11516419B2
公开(公告)日：2022-11-29
申请号：US17156290
申请日：2021-01-22
发明人： Tiejun Dai , Shoushun Chen , Zhe Gao
IPC分类号： H04N5/3745 , H01L27/146 , H04N5/345 , H04N5/355 , H04N5/378
摘要： An event driven pixel includes a photodiode configured to photogenerate charge in response to incident light received from an external scene. A photocurrent to voltage converter is coupled to the photodiode to convert photocurrent generated by the photodiode to a voltage. A filter amplifier is coupled to the photocurrent to voltage converter to generate a filtered and amplified signal in response to the voltage received from the photocurrent to voltage converter. A threshold comparison stage is coupled to the filter amplifier to compare the filtered and amplified signal received from the filter amplifier with thresholds to asynchronously detect events in the external scene in response to the incident light. A digital time stamp generator is coupled to asynchronously generate a digital time stamp in response to the events asynchronously detected in the external scene by the threshold comparison stage.
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公开(公告)号：US20220377274A1
公开(公告)日：2022-11-24
申请号：US17542160
申请日：2021-12-03
申请人： SK hynix Inc.
发明人： Kazuhiro YAHATA
IPC分类号： H04N5/3745 , G06T7/11 , H04N5/355
摘要： An image processing device is disclosed. The image processing device includes at least one first pixel having a first sensitivity, a second pixel having a second sensitivity different from the first sensitivity, a processor, and a synthesizer. The processor calculates a sampling position of the at least one first pixel and a sampling position of the second pixel, determines a reference position and adjusts the sampling position of the at least one first pixel or the second pixel based on the reference position.
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公开(公告)号：US11509852B2
公开(公告)日：2022-11-22
申请号：US17504064
申请日：2021-10-18
发明人： Atsushi Suzuki , Takanori Yamashita
IPC分类号： H04N5/347 , H04N5/378 , H04N5/3745 , B60R11/04 , H04N13/225 , H04N13/00
摘要： The imaging device includes a pixel including a photoelectric converter, a first switch, a charge holding portion, and an output unit, an output line, a readout circuit unit connected to the output line, and a control unit. The readout circuit unit includes an amplifier circuit, a second switch between the output line and the amplifier circuit, and a comparator comparing the amplified pixel signal with a reference signal. The control unit performs outputting a pixel signal by transferring the charge in the photoelectric converter to the charge holding portion, determining a level of the pixel signal amplified by the amplifier circuit, and setting a gain of the amplifier circuit in accordance with a result of determination, and sets the second switch to off during the first switch is in on and until the output unit is settled after the first switch transitions from on to off.
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公开(公告)号：US11509843B2
公开(公告)日：2022-11-22
申请号：US16948784
申请日：2020-10-01
IPC分类号： H04N5/355 , H04N5/3745 , H01L27/146 , H04N5/378
摘要： An image sensor may include a shared pixel circuit having multiple photodiodes coupled to a common floating diffusion node via respective charge transfer gates. First, the pixel circuit may be reset, and a sample-and-hold reset (SHR) value may be read out. Charge from a first of the photodiodes may be transferred to the floating diffusion node, and a first sample-and-hold signal (SHS) value may be read out. A first correlated double sampling (CDS) value is obtained by computing the difference between the SHR value and the first SHS value. Without resetting again, charge from a second of the photodiodes may be transferred to the floating diffusion node, and a second SHS value may be read out. A second CDS value is obtained by computing the difference between the first and second SHS values. Reading out the shared pixel circuit in this way substantially reduces power consumption.
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公开(公告)号：US20220368885A1
公开(公告)日：2022-11-17
申请号：US17816224
申请日：2022-07-29
IPC分类号： H04N17/00 , H04N5/369 , H04N5/3745
摘要： An image sensor may be implemented using a stitched image sensor die. The stitched image sensor die may be formed from a step and repeat exposure process using a set of tiles in a reticle set. Multiple instantiations of a same circuitry block on a given tile may be patterned and formed on the image sensor die. The image sensor die may include circuitry configured to enable testing of one or more instantiations of the same circuitry block. The image sensor die may include memory circuitry for storing indications of a functional instantiation of the multiple instances and may use the functional instantiation for normal operation.
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