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170 条记录 (耗时 0.02 秒)

    INK COMPOSITION FOR PRINTABLE THERMOELECTRIC MATERIALS
    61.
    发明公开
    INK COMPOSITION FOR PRINTABLE THERMOELECTRIC MATERIALS 审中-公开

    公开(公告)号：US20240270989A1

    公开(公告)日：2024-08-15

    申请号：US18560165

    申请日：2022-05-05

    申请人： KARLSRUHER INSTITUT FÜR TECHNOLOGIE

    发明人： Md Mofasser MALLICK ,  Uli LEMMER ,  Andres RÖSCH ,  Leonard FRANKE

    IPC分类号： C09D11/03 ,  B41M7/00 ,  C09D11/52 ,  H10N10/01 ,  H10N10/852

    CPC分类号： C09D11/03 ,  B41M7/009 ,  C09D11/52 ,  H10N10/01 ,  H10N10/852

    摘要： The present invention relates to an ink composition comprising a precursor material for a thermoelectric material, a precursor material for an inorganic binder comprising a mixture of Cu, Se and optionally S powder, an organic solvent and an organic binder. The present invention also relates to a Cu—Se—S-based ink composition for printable thermoelectric materials, comprising a mixture of Cu, Se and S powders. Furthermore, the present invention relates to a flexible printed thermoelectric material obtainable by printing the ink of the present invention. The present invention further relates as well as to a flexible printed high power density thermoelectric generator, heat flux sensor and thermoelectric cooler comprising the flexible printed thermoelectric material and its use, particularly for large scale applications. Further, the present invention also relates to a method for producing the flexible printed thermoelectric material.

    THERMOELECTRIC CONVERSION UNIT, METHOD OF MANUFACTURING THERMOELECTRIC CONVERSION UNIT, AND METHOD OF USING THERMOELECTRIC CONVERSION UNIT
    63.
    发明公开
    THERMOELECTRIC CONVERSION UNIT, METHOD OF MANUFACTURING THERMOELECTRIC CONVERSION UNIT, AND METHOD OF USING THERMOELECTRIC CONVERSION UNIT 审中-公开

    公开(公告)号：US20240244976A1

    公开(公告)日：2024-07-18

    申请号：US18585024

    申请日：2024-02-22

    申请人： Panasonic Intellectual Property Management Co., Ltd.

    发明人： HIROMASA TAMAKI

    IPC分类号： H10N10/17 ,  H10N10/01

    CPC分类号： H10N10/17 ,  H10N10/01

    摘要： A thermoelectric conversion unit includes: a first fluid passage that has a first main surface and a second main surface and through which a first fluid flows; a second fluid passage through which a second fluid having a higher temperature than the first fluid flows; a pair of thermoelectric modules including a first thermoelectric module and a second thermoelectric module; and a pair of magnetic body portions disposed inside of or on a surface of the first fluid passage along a predetermined direction from the first main surface toward the second main surface. Each of the first and second thermoelectric modules generates an electromotive force based on a temperature difference between the first fluid and the second fluid. Magnetic bodies of the pair of magnetic body portions are disposed so that the same magnetic poles thereof face each other, and generate magnetic forces that repel each other.

    Semiconductor structure and method of manufacturing a semiconductor structure
    64.
    发明授权
    Semiconductor structure and method of manufacturing a semiconductor structure 有权

    公开(公告)号：US12029123B2

    公开(公告)日：2024-07-02

    申请号：US17237607

    申请日：2021-04-22

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Yu-Hao Chen ,  Hui Yu Lee ,  Jui-Feng Kuan

    IPC分类号： H10N10/17 ,  H01L23/38 ,  H01L25/16 ,  H10N10/01 ,  H10N10/80

    CPC分类号： H10N10/17 ,  H01L23/38 ,  H01L25/167 ,  H10N10/01 ,  H10N10/80

    摘要： A semiconductor structure includes an optical component and a thermal control mechanism adjacent to the optical component and configured to control a temperature of the optical component. The thermal control mechanism includes a conductive structure, a first thermoelectric member and a second thermoelectric member opposite to the first thermoelectric member. The first thermoelectric member and the second thermoelectric member are electrically connected to the conductive structure. The first thermoelectric member and the second thermoelectric member have opposite conductive types. The semiconductor structure further includes a first dielectric layer surrounding the optical component and a portion of the thermal control mechanism, wherein the conductive structure is over the first dielectric layer, and the first thermoelectric member and the second thermoelectric member are surrounded by the first dielectric layer. The semiconductor structure further includes a first via extending through the first dielectric layer and electrically connected to the conductive structure.

    Integrated cooling device based on Peltier effect and manufacturing method thereof
    65.
    发明授权
    Integrated cooling device based on Peltier effect and manufacturing method thereof 有权

    公开(公告)号：US12027443B2

    公开(公告)日：2024-07-02

    申请号：US17836481

    申请日：2022-06-09

    申请人： MONTAGE TECHNOLOGY CO., LTD.

    发明人： Xiong Zhang

    IPC分类号： H01L23/38 ,  H10N10/01 ,  H10N10/17

    CPC分类号： H01L23/38 ,  H10N10/01 ,  H10N10/17

    摘要： Integrated cooling device based on Peltier effect and manufacturing method thereof are provided. The device comprises one or more first heat dissipation structures around a device area. Each first heat dissipation structure comprises first N-type deep doped regions and first P-type deep doped regions arranged alternately, first vias, and first metal interconnection layers. The first vias are respectively located on two ends of each first N-type and each first P-type deep doped region. The first metal interconnect layers connect the first vias and such that the first heat dissipation structures are connected as a first S-shaped structure. When the first S-shaped structure is turned on, heat in the first N-type deep doped regions and the first P-type deep doped regions flows from a side close to the device area to its other side away from the device area, so as to realize heat dissipation in the device area.

    Metallic junction thermoelectric generator
    67.
    发明授权
    Metallic junction thermoelectric generator 有权

    公开(公告)号：US11980100B2

    公开(公告)日：2024-05-07

    申请号：US17374091

    申请日：2021-07-13

    申请人： UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA

    发明人： Sang H. Choi ,  Hyun Jung Kim ,  Adam J. Duzik ,  Cheol Park

    IPC分类号： H10N10/854 ,  H10N10/01 ,  H10N10/17

    CPC分类号： H10N10/854 ,  H10N10/01 ,  H10N10/17

    摘要： A metal junction thermoelectric device includes at least one thermoelectric element. The thermoelectric element has first and second opposite sides, and a first conductor made from a first metal, and a second conductor made from a second metal. The first and second conductors are electrically interconnected in series, and the first and second conductors are arranged to conduct heat in parallel between the first and second sides. The first metal has a first occupancy state, and the second metal has a second occupancy state that is lower than the first occupancy state. A temperature difference between the first and second sides of the thermoelectric element causes a charge potential due to the difference in occupancy states of the first and second metals. The charge potential generates electrical power.

    Transition metal dichalcogenide homojunction structure with improved seebeck coefficient and method of forming the same
    68.
    发明授权
    Transition metal dichalcogenide homojunction structure with improved seebeck coefficient and method of forming the same 有权

    公开(公告)号：US11980099B2

    公开(公告)日：2024-05-07

    申请号：US18083990

    申请日：2022-12-19

    申请人： CHUNG ANG UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION

    发明人： Sang Kwon Lee ,  No Won Park ,  Jae Won Choi

    IPC分类号： H10N10/852 ,  H10N10/01

    CPC分类号： H10N10/852 ,  H10N10/01

    摘要： A transition dichalcogenide homojunction structure may include a lower high resistance layer including a plurality of PtX2 layers and an upper low resistance layer which includes the plurality of PtX2 layers and has different thickness and number of growth layers from the lower high resistance layer. And the lower high resistance layer and the upper low resistance layer may form a homojunction. The heat transfer characteristic of the lower high resistance layer may increase by the interface induced Seebeck effect with the upper low resistance layer. The transition dichalcogenide homojunction structure may generate the interface induced Seebeck effect at the interface of the homojunction to generate a thermal voltage. Further, the transition metal dichalcogenide homojunction structure may measure the Seebeck effect of the lower high resistance layer using the upper low resistance layer without separate measurement equipment.

    Soft motherboard-rigid plugin module architecture
    69.
    发明授权
    Soft motherboard-rigid plugin module architecture 有权

    公开(公告)号：US11974502B2

    公开(公告)日：2024-04-30

    申请号：US17668799

    申请日：2022-02-10

    申请人： The Regents of the University of Colorado

    发明人： Jianliang Xiao ,  Yan Sun ,  Wei Ren

    IPC分类号： H10N10/01 ,  H01L25/04 ,  H01L25/065 ,  H05K1/02 ,  H10N10/17

    CPC分类号： H10N10/01 ,  H01L25/04 ,  H01L25/0655 ,  H05K1/0283 ,  H10N10/17

    摘要： Soft motherboards having rigid plugin modules are described herein. In one aspect of the present disclosure, an electronic device can include a polymeric substrate having: a plurality of slots, each configured for receiving an electronic module; one or more electrical junctions including a stretchable conductive interconnect electronically coupling a slot to another slot of the plurality of slots; and at least one electronic module including: a film configured to: support other components of the electronic module; and be inserted, and be partially housed in, one of the plurality of slots of the polymeric substrate; and at least one electrode coupled to the film and positioned to be in contact with a corresponding electrical junction of the polymeric substrate when the film is partially housed in the polymeric substrate.