摘要:
A Multi-Level Cell (MLC) memory device and method thereof are provided. The example MLC memory device may be configured to perform data operations, and may include an MLC memory cell, a first coding device performing a first coding function, the first coding function being one of an encoding function and a decoding function, a second coding device performing a second coding function, the second coding function being one of an encoding function and a decoding function and a signal module configured to perform at least one of instructing the MLC memory cell to store data output by the second coding device if the first and second coding functions are encoding functions, and generating a demapped bit stream based on data retrieved from the MLC memory cell if the first and second coding functions are decoding functions.
摘要:
An encoding device includes an encoder and a puncturing unit. The encoder generates parity bits based on information bits. The puncturing unit punctures the parity bits based on a puncturing pattern complying with a first criterion determining a period of the puncturing pattern and a second criterion determining positions of remaining parity bits.
摘要:
A majority voting Viterbi decoder includes a branch metric calculator (BMC) for measuring a difference between a received symbol and a reference symbol and outputting branch metrics from the difference; an add-compare-selection (ACS) unit for determining an optimal path using the branch metrics; a survival path memory unit for outputting decoded symbols by performing decoding based on the optimal path; and a majority voting unit for determining a final decoded symbol by performing majority voting for the decoded symbols output from the survival path memory unit. Accordingly, by adding the majority voting unit, a decoding depth can be reduced without the loss of an encoding gain required in a system, and by reducing the decoding depth, miniaturization is possible, power consumption can be reduced, and a processing delay in a memory can be minimized.
摘要:
A DCM demapper and a DCM demapping method are provided. The DCM demapper includes: a basic signal generation unit generating a plurality of basic signals using a signal and channel information of two subcarriers; a soft decision generation unit generating a plurality of soft decisions using the plurality of basic signals; and a soft decision selection unit selecting a soft decision corresponding to each bit of the two subcarriers among the generated soft decisions.
摘要:
The flash memory device includes a control logic circuit and a bit level conversion logic circuit. The control logic circuit programs first through Nth bits of data in a memory cell array of the N-bit MLC flash memory device or reads the first through Nth bits of the data from the memory cell array in response to one of a program command and a read command. The bit level conversion control logic circuit, after the first through Nth bits of the data are completely programmed or read, programs or reads an (N+1)th bit of the data in response to a control signal. The bit level conversion control logic circuit converts voltage levels of voltages, which are used for programming or reading the first through Nth bits of the data, to program or read for 2N cell distributions of 2N+1 cell distributions corresponding to the (N+1)th bit of the data and then programs or reads for other 2N cell distributions.
摘要:
A flash memory preprocessing system comprises at least one flash memory device, a memory controller controlling program and read operations of the at least one flash memory device, and a flash preprocessor receiving program data from an external source, generating preprocessed data by converting the received program data, and outputting the preprocessed data to the memory controller. The memory controller controls the at least one flash memory device to perform a program operation on the at least one flash memory device according to the preprocessed data.
摘要:
A memory device and a memory data reading method are provided. The memory device may include: a multi-bit cell array; a programming unit that stores N data pages in a memory page in the multi-bit cell array; and a control unit that divides the N data pages into a first group and second group, reads data of the first group from the memory page, and determines a scheme of reading data of the second group from the memory page based on the read data of the first group.
摘要:
A method setting a read voltage to minimize data read errors in a semiconductor memory device including multi-bit memory cells. In the method, a read voltage associated with a minimal number of read data error is set based on a statistic value of a voltage distribution corresponding to each one of a plurality of voltage states.
摘要:
A storage device includes a controller unit and a memory cell array. The controller unit is for outputting data through a first data path or a second data path according to a property of externally supplied input data. The memory cell array includes a first memory and a second memory, and receives and stores the data from the controller unit output through the first and second data paths. The first memory has a different memory cell structure than the second memory.
摘要:
A decoding method includes performing a first decoding method and performing a second decoding method when decoding of the first decoding method fails. The first decoding method includes updating multiple variable nodes and multiple check nodes using probability values of received data. The second decoding method includes selecting at least one variable node from among the multiple variable nodes; correcting probability values of data received in the selected at least one variable node; updating the variable nodes and the check nodes using the corrected probability values; and determining whether decoding of the second decoding method is successful.