Surface acoustic wave device and communication device
    71.
    发明授权
    Surface acoustic wave device and communication device 有权
    声表面波装置及通讯装置

    公开(公告)号:US06366002B1

    公开(公告)日:2002-04-02

    申请号:US09654113

    申请日:2000-08-31

    申请人: Michio Kadota

    发明人: Michio Kadota

    IPC分类号: H03H915

    CPC分类号: H03H9/02559 H03H9/14538

    摘要: A surface acoustic wave device including a LiTaO3 substrate, and an interdigital transducer is provided on the LiTaO3 substrate. The interdigital transducer includes as a major component at least one of Au, Ag, Ta, Mo, Cu, Ni, Cr, Zn, and W, and the interdigital transducer has a normalized film thickness H/&lgr; of approximately 0.05 or less so as to excite a shear horizontal wave.

    摘要翻译: 在LiTaO 3基板上设置包括LiTaO 3基板和叉指换能器的声表面波装置。 叉指换能器包括Au,Ag,Ta,Mo,Cu,Ni,Cr,Zn和W中的至少一种的主要成分,并且叉指换能器具有约0.05或更小的标准化膜厚度H / 激发剪切水平波。

    Semiconductor photonic device
    72.
    发明授权
    Semiconductor photonic device 失效
    半导体光子器件

    公开(公告)号:US06326645B1

    公开(公告)日:2001-12-04

    申请号:US09385808

    申请日:1999-08-30

    申请人: Michio Kadota

    发明人: Michio Kadota

    IPC分类号: H01L2912

    摘要: A semiconductor photonic device has a Si substrate; a SiO2 film formed on the Si substrate; a ZnO film formed on the SiO2 film; and a semiconductor compound layer represented by InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) formed on the ZnO film.

    摘要翻译: 半导体光子器件具有Si衬底; 形成在Si衬底上的SiO 2膜; 形成在SiO 2膜上的ZnO膜; 以及在ZnO膜上形成的由In x Ga y Al z N(x + y + z = 1,0 <= x <= 1,0 <= y <= 1,0

    Surface acoustic wave device
    73.
    发明授权
    Surface acoustic wave device 失效
    表面声波装置

    公开(公告)号:US06291923B1

    公开(公告)日:2001-09-18

    申请号:US09221892

    申请日:1998-12-28

    申请人: Michio Kadota

    发明人: Michio Kadota

    IPC分类号: H01L4108

    CPC分类号: H03H9/02551

    摘要: A surface acoustic wave device includes a quartz substrate, a reflector disposed on the quartz substrate, a piezoelectric thin film disposed on a portion of the quartz substrate which excludes at least a portion of the quartz substrate on which the reflector is disposed, and an interdigital transducer disposed to contact the piezoelectric thin film.

    摘要翻译: 表面声波装置包括石英基板,布置在石英基板上的反射器,设置在石英基板的一部分上的压电薄膜,排除了布置有反射器的石英基板的至少一部分和叉指 设置成与压电薄膜接触的传感器。

    Surface acoustic wave resonator, filter, duplexer and communication apparatus
    74.
    发明授权
    Surface acoustic wave resonator, filter, duplexer and communication apparatus 有权
    表面声波谐振器,滤波器,双工器和通信装置

    公开(公告)号:US06218763B1

    公开(公告)日:2001-04-17

    申请号:US09378655

    申请日:1999-08-20

    IPC分类号: H03H925

    CPC分类号: H03H9/02559 H03H9/64

    摘要: A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer disposed thereon. The surface acoustic wave resonator operates using a shear horizontal wave, and the interdigital transducer includes an electrode film made of a metal containing W or Ta as its main component and a thin film made of Al.

    摘要翻译: 声表面波谐振器包括压电基片和设置在其上的叉指换能器。 表面声波谐振器使用剪切水平波进行操作,并且叉指式换能器包括由以W或Ta为主要成分的金属制成的电极膜和由Al制成的薄膜。

    Surface wave resonator
    75.
    发明授权
    Surface wave resonator 失效
    表面波谐振器

    公开(公告)号:US5914554A

    公开(公告)日:1999-06-22

    申请号:US706303

    申请日:1996-08-30

    CPC分类号: H03H9/02669 H03H9/6413

    摘要: An end-face reflecting-type surface wave resonator using the SH-type surface wave achieves two types of resonance characteristics by use of only a single device. An interdigital transducer having a pair of comb-like electrodes are formed on a piezoelectric substrate having two oppositely-facing end faces. The interdigital transducer has two peaks of main lobes and are assigned with weights so that the two peaks of main lobes substantially coincide with frequency positions of attenuation poles disposed across a main lobe of a virtual normal-type interdigital transducer having the same number of pairs of electrodes as the weighted interdigital transducer. Thus, two types of resonance characteristics can be obtained.

    摘要翻译: 使用SH型表面波的端面反射型表面波谐振器仅通过单个器件实现两种谐振特性。 具有一对梳状电极的叉指换能器形成在具有两个相对端面的压电基片上。 叉指式换能器具有主瓣的两个峰值并且被赋予权重,使得主瓣的两个峰值与设置在具有相同数量的对的虚拟正交型叉指式换能器的主瓣之间的衰减极的频率位置基本一致 电极作为加权叉指换能器。 因此,可以获得两种类型的谐振特性。

    Method for manufacturing surface wave devices of the end-face reflection
type
    77.
    发明授权
    Method for manufacturing surface wave devices of the end-face reflection type 失效
    端面反射型表面波器件的制造方法

    公开(公告)号:US5802685A

    公开(公告)日:1998-09-08

    申请号:US674248

    申请日:1996-07-01

    摘要: A method of manufacturing a surface wave device of an end-face reflection type comprising forming an IDT 12 on a piezoelectric plate 11, and cutting the piezoelectric plate 11 in a direction which is parallel to the outermost electrode fingers of the IDT within a target area which extends from the out edges of the outermost electrodes to a position .lambda./8 outwardly therefrom, .lambda. being the wavelength of the surface wave generated by the IDT, so as to form opposite end faces of the surface wave device.

    摘要翻译: 一种制造端面反射型表面波器件的方法,包括在压电板11上形成IDT 12,并且在目标区域内沿与IDT的最外电极指的平行方向切割压电板11 其从最外面的电极的外边缘延伸到从其向外的位置λ/ 8,λ是由IDT产生的表面波的波长,从而形成表面波器件的相对的端面。

    Acoustooptic device
    78.
    发明授权
    Acoustooptic device 失效
    声光装置

    公开(公告)号:US5657152A

    公开(公告)日:1997-08-12

    申请号:US616528

    申请日:1996-03-19

    申请人: Michio Kadota

    发明人: Michio Kadota

    CPC分类号: G02F1/335 G02F1/125

    摘要: An acoustooptic device includes a Y-cut and Z-propagation LiNbO.sub.3 substrate or 128.degree.-rotating Y-plane LiNbO.sub.3 substrate, an optical waveguide layer which is formed on at least a part of the LiNbO.sub.3 substrate and has a higher light refractive index than the LiNbO.sub.3 substrate, an interdigital electrode which is formed on the LiNbO.sub.3 substrate and generates Rayleigh waves, and a dielectric thin film layer formed on the interdigital electrode.

    摘要翻译: 声光装置包括Y切割和Z传播的LiNbO 3衬底或128°旋转的Y平面LiNbO 3衬底,光波导层形成在LiNbO 3衬底的至少一部分上并且具有比 LiNbO 3基板,形成在LiNbO 3基板上并产生瑞利波的交指电极,以及形成在叉指电极上的电介质薄膜层。

    Tunable filter including a variable capacitor connected with a surface acoustic wave resonator
    79.
    发明授权
    Tunable filter including a variable capacitor connected with a surface acoustic wave resonator 有权
    可调谐滤波器包括与表面声波谐振器连接的可变电容器

    公开(公告)号:US08310321B2

    公开(公告)日:2012-11-13

    申请号:US13096019

    申请日:2011-04-28

    申请人: Michio Kadota

    发明人: Michio Kadota

    IPC分类号: H03H9/64

    摘要: A tunable filter includes a circuit configuration in which variable capacitors are connected with surface acoustic wave resonators. The surface acoustic wave resonators each include a piezoelectric substrate made of LiTaO3 or LiNbO3, an IDT electrode made of an electrode material filled in a recess in an upper surface of the piezoelectric substrate, and a SiO2 film arranged to cover the piezoelectric substrate.

    摘要翻译: 可调谐滤波器包括其中可变电容器与表面声波谐振器连接的电路配置。 表面声波谐振器各自包括由LiTaO 3或LiNbO 3制成的压电基板,由填充在压电基板的上表面中的凹部中的电极材料制成的IDT电极和布置成覆盖压电基板的SiO 2膜。

    SURFACE ACOUSTIC WAVE DEVICE
    80.
    发明申请
    SURFACE ACOUSTIC WAVE DEVICE 有权
    表面声波设备

    公开(公告)号:US20120194032A1

    公开(公告)日:2012-08-02

    申请号:US13442899

    申请日:2012-04-10

    申请人: Michio KADOTA

    发明人: Michio KADOTA

    IPC分类号: H01L41/04 H01L41/18

    CPC分类号: H03H9/02559 H03H9/02574

    摘要: An inexpensive surface acoustic wave device that increases an acoustic velocity of a surface acoustic wave and an electromechanical coupling coefficient includes a piezoelectric substrate in which a LiNbO3 single-crystal plate having Euler angles (0°, 67° to 160°, −5° to +5°) or (90°, 51° to 133°, −5° to +5°) is provided on a high acoustic-velocity substrate in which an acoustic velocity of a transverse wave is in a range of about 5400 m/sec to about 8660 m/sec or lower, and an electrode provided on the piezoelectric substrate and made of metal.

    摘要翻译: 提高表面声波的声速和机电耦合系数的廉价的表面声波装置包括压电基板,其中具有欧拉角(0°,67°至160°,-5°至 + 5°)或(90°,51°〜133°,-5°〜+ 5°)设置在高音速基板上,其中横波的声速在约5400m / sec至约8660m / sec或更低,以及设置在压电基板上并由金属制成的电极。