摘要:
An inexpensive Love-wave device having a wide frequency difference between its resonant and antiresonant frequencies includes a Y-cut substrate made from LiNbO.sub.3 for X propagation. An interdigital transducer including a thin film of Ta or W is located on the substrate for exciting a Love wave.
摘要:
A surface acoustic wave device includes a quartz substrate having Euler angles (0°, &thgr;, 90°±5°) in which &thgr; is in a range of 119°≦&thgr;≦140°, and an IDT for exciting an SH wave is formed on the quartz substrate by use of an electrode material containing as a major component at least one of Ag, Mo, Cu, Ni, Cr, and Zn and having a density of at least about 7 g/cm3. The film thickness of the IDT is such that the attenuation constant is approximately zero.
摘要翻译:表面声波装置包括具有欧拉角(0,θ,90 5)的石英基板,其中θ在119 <θ= 140的范围内,并且在石英基板上形成用于激发SH波的IDT 通过使用包含Ag,Mo,Cu,Ni,Cr和Zn中的至少一种作为主要成分并具有至少约7g / cm 3的密度的电极材料。 IDT的膜厚度使得衰减常数近似为零
摘要:
A method for producing a surface acoustic wave device, includes the steps of preparing a piezoelectric substrate, forming a thin film electrode on the piezoelectric substrate, etching the thin film electrode for forming an IDT, trimming at least one of the piezoelectric substrate and the IDT to adjust an operation frequency of the surface acoustic wave device, and rapidly altering the surface of the IDT for stabilizing the surface of the IDT.
摘要:
In a surface acoustic wave device using a Shear Horizontal type surface acoustic wave, at least one interdigital transducer (IDT) is made of a material having a larger mass-load effect than that of aluminum. The metallization ratio of the IDT and the normalization film thickness h/&lgr; of the IDT are controlled such that ripple caused by a transversal mode wave is about 0.5 dB or less, where “h” indicates the film thickness of the electrodes and “&lgr;” indicates the wavelength of a surface acoustic wave.
摘要:
A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer disposed thereon. The surface acoustic wave resonator operates using a shear horizontal wave, and the interdigital transducer includes an electrode film made of a metal containing W or Ta as its main component and a thin film made of Al.
摘要:
A method of manufacturing a surface acoustic wave element includes the steps of providing a piezoelectric body having an interdigital transducer, where the interdigital transducer is made of a metal having a higher density than the piezoelectric body, and performing ion bombardment of the interdigital transducer and the piezoelectric body simultaneously so as to reduce the thickness of the interdigital transducer and the piezoelectric body.
摘要:
A surface acoustic wave device includes a piezoelectric plate and at least one interdigital electrode provided on the piezoelectric plate. The interdigital electrode includes a first metallic thin film and a second metallic thin film laminated on the first metallic thin film and containing tantalum as a principal component, and at least a portion of the tantalum of the second metallic thin film is &agr;-tantalum.
摘要:
A method of manufacturing a surface acoustic wave device having a piezoelectric substrate and an interdigital transducer provided thereon, includes the steps of forming a coating layer made of inorganic material or organic material on the piezoelectric substrate so as to cover the interdigital transducer and etching the coating layer via a laser light to adjust an operation frequency of the surface acoustic wave device.
摘要:
A surface acoustic wave device includes a surface acoustic wave element housed in a main body of a package. The surface acoustic wave element is electrically connected to electrode lands of the package via bonding wires, and the bonding wires are arranged so as not to pass over both of IDTs and reflectors of the surface acoustic wave device.
摘要:
A method of manufacturing a surface acoustic wave element includes the steps of providing a piezoelectric body having an interdigital transducer, where the interdigital transducer is made of a metal having a higher density than the piezoelectric body, and performing ion bombardment of the interdigital transducer and the piezoelectric body simultaneously so as to reduce the thickness of the interdigital transducer and the piezoelectric body.