公开(公告)号：US06902629B2

公开(公告)日：2005-06-07

申请号：US10122481

申请日：2002-04-12

Applicant: Yi Zheng ,  Vinita Singh ,  Srinivas D. Nemani ,  Chen-An Chen ,  Ju-Hyung Lee ,  Shankar Venkataraman

Inventor： Yi Zheng ,  Vinita Singh ,  Srinivas D. Nemani ,  Chen-An Chen ,  Ju-Hyung Lee ,  Shankar Venkataraman

IPC: B08B7/00 ,  C23C16/44 ,  B08B5/00

CPC classification number: C23C16/4405 ,  B08B7/00 ,  Y10S134/902 ,  Y10S438/905

Abstract: Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.

公开(公告)号：US06815373B2

公开(公告)日：2004-11-09

申请号：US10124655

申请日：2002-04-16

Applicant: Vinita Singh ,  Srinivas D. Nemani ,  Yi Zheng ,  Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

Inventor： Vinita Singh ,  Srinivas D. Nemani ,  Yi Zheng ,  Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

IPC: H01L2131

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.

Abstract translation: 通过混合一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物和一种或多种低分子量脂族烃化合物，提供介电常数为约3.5或更低的低介电常数膜的沉积方法。 一方面，包含一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物，一种或多种脂族烃化合物，一种或多种氧化性气体和载气的气体混合物在足以沉积低介电常数的条件下反应 薄膜在基材表面上。

公开(公告)号：US06531398B1

公开(公告)日：2003-03-11

申请号：US09702600

申请日：2000-10-30

Applicant: Frederic Gaillard ,  Li-Qun Xia ,  Ellie Yieh ,  Paul Fisher ,  Srinivas D. Nemani

Inventor： Frederic Gaillard ,  Li-Qun Xia ,  Ellie Yieh ,  Paul Fisher ,  Srinivas D. Nemani

IPC: H01L2100

CPC classification number: H01L21/76828 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76835

Abstract: A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxygen-containing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.

Abstract translation: 公开了形成有机硅酸盐层的方法。 有机硅酸盐层通过向包含有机硅烷化合物和含氧气体的气体混合物施加电场而形成。 有机硅酸盐层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，有机硅酸盐层用作金属间介电层。 在另一集成电路制造工艺中，有机硅酸盐层被结合到镶嵌结构中。