Third Metal Layer for Thin Film Transistor witih Reduced Defects in Liquid Crystal Display
    72.
    发明申请
    Third Metal Layer for Thin Film Transistor witih Reduced Defects in Liquid Crystal Display 有权
    薄膜晶体管第三金属层,液晶显示器减少缺陷

    公开(公告)号:US20140211120A1

    公开(公告)日:2014-07-31

    申请号:US13752612

    申请日:2013-01-29

    Applicant: APPLE INC.

    Abstract: A liquid crystal display (LCD) includes an array of pixels over a thin film transistor (TFT) substrate. The TFT substrate includes a TFT that has a first metal layer to form a gate electrode and a second metal layer to form a source electrode and a drain electrode for each pixel. The LCD also includes an organic insulation layer disposed over the TFT substrate, where the organic insulator layer has trenches on a top surface. The LCD further includes a third metal layer disposed over the organic insulation layer in the trenches, the trenches having a trench depth at least equal to the thickness of the third metal layer. The LCD also includes a passivation layer over the third metal layer, and a pixel electrode for each pixel over the passivation layer. The LCD further includes a polymer layer over the pixel electrode, and liquid molecules on the polymer layer.

    Abstract translation: 液晶显示器(LCD)包括薄膜晶体管(TFT)衬底上的像素阵列。 TFT基板包括具有形成栅电极的第一金属层和形成用于每个像素的源电极和漏电极的第二金属层的TFT。 LCD还包括设置在TFT基板上的有机绝缘层,其中有机绝缘体层在顶表面上具有沟槽。 LCD还包括设置在沟槽中的有机绝缘层之上的第三金属层,沟槽的沟槽深度至少等于第三金属层的厚度。 LCD还包括在第三金属层上的钝化层,以及在钝化层上的每个像素的像素电极。 LCD还包括像素电极上方的聚合物层和聚合物层上的液体分子。

    PIXEL INVERSION ARTIFACT REDUCTION
    73.
    发明申请
    PIXEL INVERSION ARTIFACT REDUCTION 有权
    像素反演艺术减少

    公开(公告)号:US20130235020A1

    公开(公告)日:2013-09-12

    申请号:US13644395

    申请日:2012-10-04

    Applicant: APPLE INC.

    Abstract: A system and device for driving high resolution monitors while reducing artifacts thereon. Utilization of Z-inversion polarity driving techniques to drive pixels in a display reduces power consumption of the display but tends to generate visible horizontal line artifacts caused by capacitances present between the pixels and data lines of the display. By introducing a physical shield between the pixel and data line elements, capacitance therebetween can be reduced, thus eliminating the cause of the horizontal line artifacts. The shield may be a common voltage line (Vcom) of the display.

    Abstract translation: 一种用于驱动高分辨率监视器同时减少伪影的系统和装置。 使用Z反转极性驱动技术来驱动显示器中的像素可以降低显示器的功耗,但是倾向于产生由存在于显示器的像素和数据线之间的电容引起的可见水平线伪影。 通过在像素和数据线元件之间引入物理屏蔽,可以减小它们之间的电容,从而消除水平线伪影的原因。 屏蔽可以是显示器的公共电压线(Vcom)。

    Corrosion resistant test lines
    75.
    发明授权

    公开(公告)号:US10121843B2

    公开(公告)日:2018-11-06

    申请号:US15176836

    申请日:2016-06-08

    Applicant: Apple Inc.

    Abstract: A display may have an array of pixels formed from thin-film transistor circuitry. The thin-film transistor circuitry may include thin-film layers of dielectric, semiconductor, and metal on a dielectric substrate. Test structures may be formed around the periphery of the substrate to facilitate testing of the thin-film circuitry during manufacturing. The test structures may include test pads that are coupled to the thin-film circuitry by test lines extending from the thin-film circuitry. Following testing, the outermost portions of the display and the test pads on these display portions may be removed by cutting the substrate along a substrate cut line. The test lines may be formed from parallel lines that are shorted together, semiconductor layers, multiple layers of conductive material, and other structures that resist corrosion along the cut line.

    Displays with silicon and semiconducting oxide thin-film transistors

    公开(公告)号:US10096622B2

    公开(公告)日:2018-10-09

    申请号:US15727475

    申请日:2017-10-06

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Display with inactive area surrounded by active area

    公开(公告)号:US09853096B1

    公开(公告)日:2017-12-26

    申请号:US15257408

    申请日:2016-09-06

    Applicant: Apple Inc.

    CPC classification number: H01L27/3276 H01L27/124 H01L51/0096

    Abstract: A display may have an active area with an array of pixels to display images. An inactive area in the display may be formed from an opening in the active area. The inactive area may be enclosed by the pixels in the active area. An inactive border may run along an edge of the inactive area. A grid of positive power supply lines may be used to supply power to the pixels. Initialization voltage lines may be used to distribute initialization voltages to the pixels for use during transistor threshold voltage compensation operations. The inactive border may be free of positive power supply lines and initialization voltages lines. Control signal lines and data lines may pass through the inactive border to supply control signals and data signals respectively to the pixels. The display may have thin-film transistor circuitry with multiple layers of data lines.

    Flexible display with bent edge regions

    公开(公告)号:US09640561B2

    公开(公告)日:2017-05-02

    申请号:US14954805

    申请日:2015-11-30

    Applicant: Apple Inc.

    Abstract: An electronic device may have a flexible display with portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area. Contact pads may be formed in an inactive area of the display. Signal lines may couple the display pixels to the contact pads. The signal lines may overlap the bend axis in the inactive area of the display. During fabrication, an etch stop may be formed on the display that overlaps the bend axis. The etch stop may prevent over etching of dielectric such as a buffer layer on a polymer flexible display substrate. A layer of polymer that serves as a neutral stress plane adjustment layer may be formed over the signal lines in the inactive area of the display. Upon bending, the neutral stress plane adjustment layer helps prevent stress in the signal lines.

    Organic Light-Emitting Diode Displays with Silicon and Semiconducting Oxide Thin-Film Transistors
    80.
    发明申请
    Organic Light-Emitting Diode Displays with Silicon and Semiconducting Oxide Thin-Film Transistors 有权
    具有硅和半导体氧化物薄膜晶体管的有机发光二极管显示器

    公开(公告)号:US20160307988A1

    公开(公告)日:2016-10-20

    申请号:US14854367

    申请日:2015-09-15

    Applicant: Apple Inc.

    CPC classification number: H01L27/3265 H01L27/3248 H01L27/3262

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. The silicon transistors may be configured in a top gate arrangement. The oxide transistors may be configured in a top gate or a bottom gate arrangement. In one embodiment, source-drain contacts for the silicon and oxide transistors may be formed simultaneously. In another embodiment, the silicon and oxide thin-film transistor structures may be formed using at least three metal routing layers.

    Abstract translation: 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中,可以形成包括半导体氧化物薄膜晶体管,硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 硅晶体管可以配置在顶栅极配置中。 氧化物晶体管可以配置在顶栅极或底栅极配置中。 在一个实施例中,可以同时形成用于硅和氧化物晶体管的源极 - 漏极接触。 在另一个实施例中,硅和氧化物薄膜晶体管结构可以使用至少三个金属布线层形成。

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