Abstract:
A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.
Abstract:
A substrate tray, a susceptor assembly including a substrate tray, and a reactor including a substrate tray and/or susceptor assembly are disclosed. The substrate tray is configured to retain a substrate during processing and can be formed of a substantially non-reactive material. The substrate tray can be received by a susceptor, formed of another material, to form the susceptor assembly.