公开(公告)号：US09514927B2

公开(公告)日：2016-12-06

申请号：US15083136

申请日：2016-03-28

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Matthew G. Goodman ,  Robert Michael Vyne ,  Eric R. Hill

IPC: H01L21/02 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/311 ,  B08B5/00 ,  B08B7/00 ,  C30B23/02 ,  C30B25/18 ,  C30B29/06

CPC classification number: H01L21/02049 ,  B08B5/00 ,  B08B7/0014 ,  B08B7/0071 ,  C30B23/025 ,  C30B25/186 ,  C30B29/06 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/0217 ,  H01L21/02301 ,  H01L21/02348 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02636 ,  H01L21/02661 ,  H01L21/31116 ,  H01L21/3205 ,  H01L21/324

Abstract: A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.

Abstract translation: 用于集成电路制造的方法可以包括通过预清洁工艺去除氧化硅。 预清洁方法可以包括在第一反应室中在基材的表面上沉积含卤素的材料，并将具有含卤素材料的基材转移到第二反应室。 氧化硅材料可以通过升华第二反应室中的含卤物质从基板的表面去除。 诸如导电材料的目标材料随后可以沉积在第二反应室中的基板表面上。

公开(公告)号：US11264255B2

公开(公告)日：2022-03-01

申请号：US16447297

申请日：2019-06-20

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Eric R. Hill

IPC: B05C9/14 ,  H01L21/67

Abstract: A system for removing an oxide material from a surface of a substrate can include a substrate tray to receive the substrate, and a cooling body to receive the substrate tray. The system may include a first temperature control element configured to control a temperature of the substrate tray and a second temperature control element configured to control a temperature of the cooling body, where the first temperature control element and the second temperature control element can be independently controlled. A method for removing oxide material from a surface of a substrate can include providing the substrate on a substrate tray having heating elements, cooling the substrate by transferring heat from the substrate tray to a cooling body, depositing a halogen-containing material on the cooled substrate while the substrate is on the cooling body, and subsequently sublimating the halogen-containing material by heating the cooled substrate by transferring heat from the substrate tray to the substrate.

公开(公告)号：US20160254137A1

公开(公告)日：2016-09-01

申请号：US15083136

申请日：2016-03-28

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Matthew G. Goodman ,  Robert Michael Vyne ,  Eric R. Hill

IPC: H01L21/02 ,  C30B29/06 ,  C30B23/02 ,  C30B25/18 ,  B08B5/00 ,  B08B7/00

CPC classification number: H01L21/02049 ,  B08B5/00 ,  B08B7/0014 ,  B08B7/0071 ,  C30B23/025 ,  C30B25/186 ,  C30B29/06 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/0217 ,  H01L21/02301 ,  H01L21/02348 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02636 ,  H01L21/02661 ,  H01L21/31116 ,  H01L21/3205 ,  H01L21/324

Abstract: A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.

公开(公告)号：US10373850B2

公开(公告)日：2019-08-06

申请号：US14645158

申请日：2015-03-11

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Eric R. Hill

IPC: C23C16/46 ,  H01L21/67

Abstract: A system for removing an oxide material from a surface of a substrate can include a substrate tray to receive the substrate, and a cooling body to receive the substrate tray. The system may include a first temperature control element configured to control a temperature of the substrate tray and a second temperature control element configured to control a temperature of the cooling body, where the first temperature control element and the second temperature control element can be independently controlled. A method for removing oxide material from a surface of a substrate can include providing the substrate on a substrate tray having heating elements, cooling the substrate by transferring heat from the substrate tray to a cooling body, depositing a halogen-containing material on the cooled substrate while the substrate is on the cooling body, and subsequently sublimating the halogen-containing material by heating the cooled substrate by transferring heat from the substrate tray to the substrate.

公开(公告)号：US09299557B2

公开(公告)日：2016-03-29

申请号：US14220001

申请日：2014-03-19

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Matthew G. Goodman ,  Robert Michael Vyne ,  Eric R. Hill

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/311

CPC classification number: H01L21/02049 ,  B08B5/00 ,  B08B7/0014 ,  B08B7/0071 ,  C30B23/025 ,  C30B25/186 ,  C30B29/06 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/0217 ,  H01L21/02301 ,  H01L21/02348 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02636 ,  H01L21/02661 ,  H01L21/31116 ,  H01L21/3205 ,  H01L21/324

Abstract: A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.

公开(公告)号：US20150270122A1

公开(公告)日：2015-09-24

申请号：US14220001

申请日：2014-03-19

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Matthew G. Goodman ,  Robert Michael Vyne ,  Eric R. Hill

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/324

CPC classification number: H01L21/02049 ,  B08B5/00 ,  B08B7/0014 ,  B08B7/0071 ,  C30B23/025 ,  C30B25/186 ,  C30B29/06 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/0217 ,  H01L21/02301 ,  H01L21/02348 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02636 ,  H01L21/02661 ,  H01L21/31116 ,  H01L21/3205 ,  H01L21/324

Abstract: A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.

Abstract translation: 用于集成电路制造的方法可以包括通过预清洁工艺去除氧化硅。 预清洁方法可以包括在第一反应室中在基材的表面上沉积含卤素的材料，并将具有含卤素材料的基材转移到第二反应室。 氧化硅材料可以通过升华第二反应室中的含卤物质从基板的表面去除。 诸如导电材料的目标材料随后可以沉积在第二反应室中的基板表面上。