公开(公告)号：US06947264B2

公开(公告)日：2005-09-20

申请号：US10313070

申请日：2002-12-06

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5/39 ,  G11C11/16

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/16

摘要： A current-perpendicular-to-the plane magnetoresistive sensor with a self-pinned in-stack longitudinal bias structure is provided comprising a ferromagnetic bias layer formed of material having a negative magnetostriction coefficient and a spacer layer for antiparallel coupling to a free layer. The negative magnetostriction of the bias layer interacts with the lapping-induced stress anisotropy of the sensor stack to provide strong pinning of the magnetization of the bias layer in a direction parallel to the ABS and antiparallel to the direction of the magnetization of the free layer. Magnetostatic coupling of the bias layer magnetization with the free layer provides a longitudinal bias field to stabilize the free layer magnetization.

摘要翻译： 提供具有自固定叠层纵向偏置结构的电流垂直于平面磁阻传感器，其包括由具有负磁致伸缩系数的材料形成的铁磁偏置层和用于与自由层反平行耦合的间隔层。 偏置层的负磁致伸缩与传感器堆叠的研磨引起的应力各向异性相互作用，以在平行于ABS并且与自由层的磁化方向反平行的方向提供偏置层的磁化的强固定。 偏置层磁化与自由层的静电耦合提供了纵向偏置场以稳定自由层磁化。

公开(公告)号：US06933042B2

公开(公告)日：2005-08-23

申请号：US10631997

申请日：2003-07-30

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5/127 ,  G11B5/39 ,  G11B5/64

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T428/2495 ,  Y10T428/265

摘要： A magnetic head having a pinned area, a free area, and a nanoconstricted area encompassing portions of the pinned and free areas. A first layer of magnetic material extends along the pinned and free areas. An AP coupling layer extends along the pinned area. A third layer of magnetic material is positioned above the AP coupling layer, an active portion of the third layer extending along the pinned area but not along the free area. The first and third layers have magnetic moments that are self-pinned antiparallel to each other in the pinned area and a portion of the nanoconstricted area encompassing the pinned area.

公开(公告)号：US06876527B2

公开(公告)日：2005-04-05

申请号：US10290825

申请日：2002-11-08

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01F41/18 ,  H01L43/08 ,  H01L43/10

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A spin valve sensor with an antiparallel coupled lead/sensor overlap region is provided comprising a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers. The ferromagnetic material of the bias layer in a track width region defined by a space between the first and second lead layers is converted to a nonmagnetic oxide layer allowing the free layer in the track width region to rotate in response to signal fields from a magnetic disk.

摘要翻译： 提供了具有反并联耦合的引线/传感器重叠区域的自旋阀传感器，其包括反向平行耦合到第一和第二无源区域中的自由层的铁磁偏置层，其中第一和第二引线层与自旋阀传感器层重叠。 在由第一和第二引线层之间的空间限定的轨道宽度区域中的偏置层的铁磁材料被转换为非磁性氧化物层，允许轨道宽度区域中的自由层响应于来自磁盘的信号场而旋转 。

公开(公告)号：US06870716B2

公开(公告)日：2005-03-22

申请号：US10255045

申请日：2002-09-24

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5/31 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3103 ,  G11B5/313 ,  G11B5/3146 ,  G11B5/3903 ,  G11B2005/3996

摘要： A magnetic head having a first layer having a positive magnetostriction and a second layer coupled to the first layer. The second layer has a negative magnetostriction that counteracts at least a portion of the positive magnetostriction of the first layer so that the net effective magnetic anisotropy of the layers together is reduced or essentially cancelled, thereby increasing a sensitivity of the layer(s) to external magnetic fields.

摘要翻译： 具有具有正磁致伸缩的第一层和耦合到第一层的第二层的磁头。 第二层具有抵消第一层的正磁致伸缩的至少一部分的负磁致伸缩，使得层的净有效磁各向异性一起减少或基本上抵消，从而增加层对外部的敏感性 磁场。

公开(公告)号：US06866751B2

公开(公告)日：2005-03-15

申请号：US10104213

申请日：2002-03-21

申请人： Hardayal Singh Gill ,  Andy Cuong Tran

发明人： Hardayal Singh Gill ,  Andy Cuong Tran

IPC分类号： G11B5/00 ,  G11B5/31 ,  G11B5/39 ,  C23C14/34 ,  H04R21/00 ,  G11B5/27

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/0008 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49027 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a preferential setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The preferential setting sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.

摘要翻译： 读头中的自旋阀传感器具有位于自固定AP钉扎层结构和自由层结构之间的间隔层。 自由层结构通过邻接自旋阀传感器的第一和第二侧表面的第一和第二硬偏压层纵向稳定。 AP钉扎层结构具有位于第一和第二AP钉扎层（AP1）和（AP2）之间的反平行耦合层（APC）。 本发明通过在与传感器的各层的主平面平行的平面中对头表面施加锐角的场来采用AP钉扎层的磁矩的优先设置。 优先设置设置每个AP固定层的正确极性，极性符合与自旋阀传感器一起使用的处理电路。

公开(公告)号：US06802114B2

公开(公告)日：2004-10-12

申请号：US10659924

申请日：2003-09-11

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3954 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49067

摘要： A method of making a dual spin valve sensor includes the steps of forming first and second pinned layer structures, forming antiferromagnetic first and second pinning layers exchange coupled to the first and second pinned layer structures, forming an antiparallel (AP) coupled free layer structure between the first and second pinned layer structures, forming nonmagnetic conductive first and second spacer layers between the AP coupled free layer structure and the first and second pinned layer structures respectively, and a making of the AP coupled free layer structure includes the steps of forming ferromagnetic first, second and third antiparallel (AP) coupled free layers and forming a first antiparallel coupling layer between the first and second AP coupled free layers and a second antiparallel coupling layer between the second and third AP coupled free layers.

摘要翻译： 制造双自旋阀传感器的方法包括以下步骤：形成第一和第二被钉扎层结构，形成与第一和第二被钉扎层结构交换耦合的反铁磁第一和第二钉扎层，在第一和第二钉扎层结构之间形成反平行（AP）耦合自由层结构， 第一和第二钉扎层结构，分别在AP耦合自由层结构和第一和第二钉扎层结构之间形成非磁性导电第一和第二间隔层，并且AP耦合自由层结构的制造包括以下步骤： 第二和第三反并联（AP）耦合的自由层，并且在第一和第二AP耦合自由层之间形成第一反平行耦合层，以及在第二和第三AP耦合自由层之间的第二反向平行耦合层。

公开(公告)号：US06751845B2

公开(公告)日：2004-06-22

申请号：US09878673

申请日：2001-06-11

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49036 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49067

摘要： A spin valve sensor with a continuous junction is provided which has a sensor portion of a free layer longitudinally biased by first and second AFM biasing layers that are exchange coupled to first and second side portions of the free layer and a sensor portion of an AFM pinning layer that pins a sensor portion of a pinned layer perpendicular to the ABS in either a top spin valve or a bottom spin valve sensor. Magnetic spins of the first and second AFM biasing layers are set by a field longitudinal to the free layer in the presence of heat at the wafer level and magnetic spins of the sensor portion of the AFM pinning layer are set by a current pulse through the first and second leads to the spin valve sensor which sufficiently heat the sensor portion and cause a current pulse field from the free layer which acts on a pinned layer in the spin valve sensor to set the magnetic spins of the sensor portion of the AFM pinning layer perpendicular to the ABS without disturbing the orientation of the magnetic spins of the first and second AFM biasing layers.

摘要翻译： 提供具有连续结的自旋阀传感器，其具有通过第一和第二AFM偏置层纵向偏置的自由层的传感器部分，其被交换耦合到自由层的第一和第二侧部分以及AFM钉扎的传感器部分 层，其在顶部自旋阀或底部自旋阀传感器中引导垂直于ABS的被钉扎层的传感器部分。 第一AFM偏置层和第二AFM偏置层的磁自旋在晶片级处存在热的情况下通过纵向到自由层的场设定，并且AFM钉扎层的传感器部分的磁自旋通过第一 并且第二导通到自旋阀传感器，其充分加热传感器部分并且引起作用在自旋阀传感器中的被钉扎层上的自由层的电流脉冲场，以将AFM钉扎层的传感器部分的磁自旋垂直 而不干扰第一和第二AFM偏置层的磁自旋的取向。

公开(公告)号：US06735060B2

公开(公告)日：2004-05-11

申请号：US09886832

申请日：2001-06-20

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3143 ,  G11B5/3903 ,  G11B5/4806 ,  G11B2005/3996

摘要： A cap layer structure is provided with a first layer composed of a metal and a second cap layer composed of a metal oxide. The first cap layer reflects conduction electrons back into the mean free path of conduction electrons and the second cap layer protects the first cap layer from subsequent processing steps without degrading the performance of the first cap layer.

摘要翻译： 盖层结构设置有由金属构成的第一层和由金属氧化物构成的第二盖层。 第一盖层将传导电子反射回传导电子的平均自由路径，并且第二盖层保护第一盖层不受后续处理步骤的影响，而不降低第一盖层的性能。

公开(公告)号：US06724586B2

公开(公告)日：2004-04-20

申请号：US09819357

申请日：2001-03-27

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996

摘要： An antiparallel (AP)-pinned magnetoresistive tunnel junction (MTJ) sensor is provided with a single antiferromagnetic (AFM) layer sandwiched between an AP-pinned layer and a bias layer for pinning the magnetization directions of the AP-pinned layer and the bias layer. The bias layer may be a simple ferromagnetic bias layer or, alternatively, may be an AP-pinned bias layer including first and second ferromagnetic bias layers with an antiferromagnetic coupling layer sandwiched between. The bias layer provides a demagnetization field HdmB at the free layer having the same direction as the demagnetization field HdmP from the AP-pinned layer. The sum of HdmP and HdmB counterbalance a ferromagnetic coupling field HFC from the AP-pinned layer to obtain zero or near zero asymmetry of the bias point on the transfer curve of the MTJ sensor.

摘要翻译： 反并联（AP）固定磁阻隧道结（MTJ）传感器设置有夹在AP固定层和偏置层之间的单反铁磁（AFM）层，用于固定AP钉扎层和偏置层的磁化方向 。 偏置层可以是简单的铁磁偏置层，或者也可以是包括第一和第二铁磁偏置层的AP钉入偏置层，其中夹在反铁磁耦合层之间。 偏置层在自由层处提供与来自AP固定层的退磁场HdmP相同方向的去磁场HdmB。 HdmP和HdmB的总和平衡了AP钉扎层的铁磁耦合场HFC，以获得MTJ传感器传递曲线上偏置点的零点或近零不对称性。

公开(公告)号：US06680828B2

公开(公告)日：2004-01-20

申请号：US10165562

申请日：2002-06-07

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/09 ,  G11B5/1278 ,  G11B5/3903 ,  G11B5/3954 ,  G11B2005/0029 ,  G11B2005/3996

摘要： A magnetoresistive read (MR) sensor system and a method for fabricating the same are provided. First provided are a first ferromagnetic layer, a first spacer layer positioned above the first ferromagnetic layer, and a second ferromagnetic layer positioned above the first spacer layer for working in conjunction with the first ferromagnetic layer to define a first sensor. An antiparallel coupling layer is positioned above the second ferromagnetic layer to separate the first sensor from a second sensor. The second sensor is defined by a third ferromagnetic layer positioned above the antiparallel coupling layer, a second spacer layer positioned above the third ferromagnetic layer, and a fourth ferromagnetic layer positioned above the second spacer layer.

摘要翻译： 提供了一种磁阻读取（MR）传感器系统及其制造方法。 首先提供的是第一铁磁层，位于第一铁磁层之上的第一间隔层和位于第一间隔层上方的第二铁磁层，用于与第一铁磁层结合起来以形成第一传感器。 反平行耦合层位于第二铁磁层上方，以将第一传感器与第二传感器分离。 第二传感器由位于反平行耦合层上方的第三铁磁层限定，位于第三铁磁层上方的第二间隔层和位于第二间隔层上方的第四铁磁层。