摘要:
An antenna device has: a dielectric substrate; an electric supply line that has a microstrip line and is formed on the dielectric substrate; an antenna element that has a microstrip line and is formed on the dielectric substrate; and a reflector plate disposed on the dielectric substrate at a predetermined angle of inclination. The electric supply line and the antenna element deviate from a dimensional factor that allows the electric supply line and the antenna element to have an omnidirectivity, and the electric supply line and the antenna element has a dimensional factor that allows the electric supply line and the antenna element to have an elliptical directivity.
摘要:
A WBS design managing means in project management, comprising: a WBS tree-like architecture designing means for implementing graphical tree-like design of the work items included in a project and their relations, and mapping them into an enhanced WBS data structure; a WBS attribute editing means for defining and editing attributes of work items at each node of the tree-like architecture; and a WBS data managing means for storing and managing data constructed in accordance with said enhanced WBS data structure. The WBS design managing means may connect to a converter for converting said constructed data into the format required by a project management tool so as to input said structured data to the project management tool. Besides, there is provided an enhanced WBS design tool. The present invention makes the system design tool and project management tool be integrated, so that the system architect and the project management personal have more fluent channel for information exchange under the support of the present invention's tool, improving efficiency and accuracy of project management.
摘要:
An antenna device, includes a plurality of substrate type antennas arranged in a direction, each of the substrate type antennas includes a dielectric substrate, an electric supply line that includes a microstrip line and is formed on the dielectric substrate, and antenna elements each of which includes microstrip lines and formed on the dielectric substrate, and a reflector plate located along the direction that the substrate type antennas are arranged. The substrate type antennas each have different angles of inclination relative to the reflector plate.
摘要:
The inventive superconducting wire comprises a substrate and a continuous layer of atomically ordered superconducting material. The inventive wire has a length greater than 10 meters.
摘要:
The present invention provides a general charging method applicable to a charging system in the communication field, comprising steps of establishing a charging strategy and performing the charging based upon the charging strategy. The charging strategy comprises a plurality of priorities each of which comprises a plurality of periods of time, and each of the periods of time corresponds to a type of rate segmentation and is provided a plurality of rate segments in each of which there are a plurality of rates. The step of performing the charging comprises steps of: searching for the highest priority in the charging strategy; searching for a corresponding period of time in the priority based upon the time a subscriber uses a service, and if found, performing the charging based upon the rate segments in the period of time; when the charging has been completed or the priorities have been searched through, and if there is any usage quantity that can't be charged, recording it and terminating the charging. With such a structure of general charging strategy, the present invention can satisfy various charging demands and provide generality and adequate expansibility. Also, the present invention enables subscribers to configure different charging methods as needed.
摘要:
The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developing the predetermined portion of the precursor layer. The developing step removes, or at least substantially removes, the predetermined portion from the substrate, thereby forming a pattern on the substrate that comprises a remaining portion of the precursor. In one embodiment, the precursor layer comprises Ti(PriO)2(EAA)2.
摘要翻译:本发明通常包括在衬底上形成图案的方法。 该方法包括将包含至少一种金属的前体施加到基底以形成前体层,暴露前体层的预定部分并显影前体层的预定部分。 显影步骤从衬底去除或至少基本上除去预定部分,从而在包含前体的剩余部分的衬底上形成图案。 在一个实施方案中,前体层包含Ti(Pr O)2(EAA)2 N 2。
摘要:
The present invention provides, in one embodiment, a method of fabricating a semiconductor device (100). The method comprises growing an oxide layer (120) on a gate structure (114) and a substrate (102) and implanting a dopant (124) into the substrate (102) and the oxide layer (120). Implantation is such that a portion of the dopant (124) remains in the oxide layer (120) to form an implanted oxide layer (126). The method further includes depositing a protective oxide layer (132) on the implanted oxide layer (126) and forming etch-resistant off-set spacers (134). The etch-resistant off-set spacers (134) are formed adjacent sidewalls of the gate structure (114) and on the protective oxide layer (132). The etch resistant off-set spacers having an inner perimeter (135) adjacent the sidewalls and an opposing outer perimeter (136). The method also comprises removing portions of the protective oxide layer (132) lying outside the outer perimeter (136) of the etch-resistant off-set spacers (134). Other embodiments of the present invention include a transistor device (200) and method of manufacturing an integrated circuit (300).
摘要:
A process for forming aluminum based interconnect structures, with a reduced risk of void formation, occurring during photoresist removal and clean up procedures, has been developed. The process features removing the photoresist layer, used as a mask for patterning of an aluminum based layer, using a two phase, in situ photoresist removal procedure, followed by a cold water rinse. An aluminum oxide layer, formed during the initial phase of the two phase, in situ photoresist removal procedure, protects the sides of the aluminum based interconnect structure, during post-clean procedures, reducing the risk of galvanic corrosion and void formation. In addition the temperature of a DI water, post-clean procedure, has also been decreased to between about 5 to 10.degree. C., reduced, also reducing the risk of galvanic corrosion, that can occur during the post clean procedures.