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    METHODS OF FORMING A DOPED SEMICONDUCTOR THIN FILM, DOPED SEMICONDUCTOR THIN FILM STRUCTURES, DOPED SILANE COMPOSITIONS, AND METHODS OF MAKING SUCH COMPOSITIONS
    71.
    发明申请
    METHODS OF FORMING A DOPED SEMICONDUCTOR THIN FILM, DOPED SEMICONDUCTOR THIN FILM STRUCTURES, DOPED SILANE COMPOSITIONS, AND METHODS OF MAKING SUCH COMPOSITIONS 审中-公开
    形成二极管半导体薄膜的方法，掺杂的半导体薄膜结构，掺杂的硅烷组合物和制备这些组合物的方法

    公开(公告)号：US20080022897A1

    公开(公告)日：2008-01-31

    申请号：US11868927

    申请日：2007-10-08

    申请人： Fabio Zurcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Cleeves

    发明人： Fabio Zurcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Cleeves

    IPC分类号： C09D1/00

    CPC分类号： H01L21/02576 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628

    摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”

    摘要翻译： 用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。 组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。 通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。 据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。 通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。 因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的“液态硅”具有商业质量和数量的掺杂半导体膜。

    Interface layer for the fabrication of electronic devices
    72.
    发明授权
    Interface layer for the fabrication of electronic devices 失效
    接口层用于制造电子设备

    公开(公告)号：US07315068B2

    公开(公告)日：2008-01-01

    申请号：US11077240

    申请日：2005-03-09

    申请人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    发明人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    IPC分类号： H01L29/94

    CPC分类号： H01L27/1292

    摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

    摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

    Interface layer for the fabrication of electronic devices
    75.
    发明授权
    Interface layer for the fabrication of electronic devices 失效
    接口层用于制造电子设备

    公开(公告)号：US06911385B1

    公开(公告)日：2005-06-28

    申请号：US10226903

    申请日：2002-08-22

    申请人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    发明人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    IPC分类号： H01L21/44 ,  H01L21/76 ,  H01L21/77

    CPC分类号： H01L27/1292

    摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

    摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。